1. Potential applications of an electron cyclotron resonance multicusp plasma source
- Author
-
C.C. Tsai, H. H. Haselton, S. M. Gorbatkin, James B. Roberto, W. L. Stirling, and Lee A. Berry
- Subjects
Argon ,Chemistry ,Cyclotron resonance ,chemistry.chemical_element ,Surfaces and Interfaces ,Plasma ,Condensed Matter Physics ,Electron cyclotron resonance ,Surfaces, Coatings and Films ,Etching (microfabrication) ,Atomic physics ,Plasma processing ,Plasmatron ,Helium - Abstract
An electron cyclotron resonance (ECR) multicusp plasmatron has been developed by feeding a multicusp bucket arc chamber with a compact ECR plasma source. This novel source produces large (about 25 cm diam), uniform (to within ±10%), dense (>1011 cm−3) plasmas of argon, helium, hydrogen, and oxygen. It has been operated to produce an oxygen plasma for etching 12.7 cm (5 in.) positive photoresist‐coated silicon wafers with uniformity within ±8%. Results and potential applications of this new ECR plasma source for plasma processing of thin films are discussed.An electron cyclotron resonance (ECR) multicusp plasmatron has been developed by feeding a multicusp bucket arc chamber with a compact ECR plasma source. This novel source produces large (about 25 cm diam), uniform (to within ±10%), dense (>1011 cm−3) plasmas of argon, helium, hydrogen, and oxygen. It has been operated to produce an oxygen plasma for etching 12.7 cm (5 in.) positive photoresist‐coated silicon wafers with uniformity within ±8%. Results and potential applications of this new ECR plasma source for plasma processing of thin films are discussed.
- Published
- 1990