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The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electronics. In this work, pulsed‐laser deposition is used to grow HfO2 thin films on graphene/SiO2/Si. As graphene is easily damaged under standard oxide‐film deposition conditions, the process needs to be adjusted to minimize the oxidation and the collision‐induced damage. A systematic study is conducted in order to identify the crucial deposition parameters for diminishing the defect concentration in the graphene interlayer. For evaluating the quality of graphene, it is mainly relied on data obtained from Raman spectroscopy, using approaches beyond the Tuinstra‐Koenig relation. The results show that the defects are mainly a consequence of the high kinetic energy of the plasma‐plume particles. Using a relatively high Ar process pressure, a sufficiently low defect concentration is ensured, without compromising the quality of the HfO2 thin film. This enabled us to successfully prepare memristive devices with a filamentary type of switching, utilizing the graphene layer as a bottom electrode. The findings of this study can be easily transferred to other systems for the development of oxide electronic devices. [ABSTRACT FROM AUTHOR]

Memristive devices are novel electronic devices, which resistance can be tuned by an external voltage in a non-volatile way. Due to their analog resistive switching behavior, they are considered to emulate the behavior of synapses in neuronal networks. In this work, we investigate memristive devices based on the field-driven redox process between the p-conducting Pr0.7Ca0.3MnO3 (PCMO) and different tunnel barriers, namely, Al2O3, Ta2O5, and WO3. In contrast to the more common filamentary-type switching devices, the resistance range of these area-dependent switching devices can be adapted to the requirements of the surrounding circuit. We investigate the impact of the tunnel barrier layer on the switching performance including area scaling of the current and variability. Best performance with respect to the resistance window and the variability is observed for PCMO with a native Al2O3 tunnel oxide. For all different layer stacks, we demonstrate a spike timing dependent plasticity like behavior of the investigated PCMO cells. Furthermore, we can also tune the resistance in an analog fashion by repeated switching the device with voltage pulses of the same amplitude and polarity. Both measurements resemble the plasticity of biological synapses. We investigate in detail the impact of different pulse heights and pulse lengths on the shape of the stepwise SET and RESET curves. We use these measurements as input for the simulation of training and inference in a multilayer perceptron for pattern recognition, to show the use of PCMO-based ReRAM devices as weights in artificial neural networks which are trained by gradient descent methods. Based on this, we identify certain trends for the impact of the applied voltages and pulse length on the resulting shape of the measured curves and on the learning rate and accuracy of the multilayer perceptron. [ABSTRACT FROM AUTHOR]

Memristive switching devices are promising for future data storage and neuromorphic computing applications to overcome the scaling and power dissipation limits of classical CMOS technology. Many groups have engineered bilayer oxide structures to enhance the switching performance especially in terms of retention and device reliability. Here, introducing retention enhancement oxide layers into the memristive stack is shown to result in a reduction of the switching speed not only by changing the voltage and temperature distribution in the cell, but also by influencing the rate‐limiting‐step of the switching kinetics. In particular, it is demonstrated that by introducing a retention enhancement layer into resistive switching SrTiO3 devices, the kinetics are no longer determined by the interface exchange reaction between switching oxide and active electrode, but depend on the oxygen ion migration in the additional interface layer. Thus, the oxygen migration barrier in the additional layer determines the switching speed. This trade‐off between retention and switching speed is of general importance for rational engineering of memristive devices. [ABSTRACT FROM AUTHOR]

Herein, an investigation of the impact of the dopant and carbon content in iron-doped zinc oxide/carbon composites is presented. For this purpose, a comprehensive morphological, structural, and electrochemical characterization of a series of different compounds is reported, including techniques like X-ray diffraction (XRD), transmission electron microscopy (TEM), inductively coupled plasma optical emission spectroscopy (ICP-OES), thermogravimetric analysis (TGA), specific surface area using the Brunauer-Emmett-Teller (BET) algorithm, pycnometry, small-angle X-ray scattering (SAXS), cyclic voltammetry (CV), and galvanostatic cycling. The obtained results reveal an impact of the iron-dopant content on the crystallite and particle size as well as the detailed de-/lithiation mechanism. The effect on the cycling stability, however, appears to be rather minor. The carbon coating content, on the contrary, has a significant influence on the cycling stability and rate capability. According to these results, a carbon content of about 10 wt% is sufficient to achieve stable cycling at lower current densities, while a carbon content of 15-20 wt% allows for specific capacities of 425-500 mAh g-1, when applying a specific current of 1 A g-1, for instance. [ABSTRACT FROM AUTHOR]

The article reports that chytrid fungus Batrachochytrium dendrobatidis (Bd) has been involve as cause of amphibian declines in Honduras frog. It states that to prevent the spread of chytrid, plastic bag and surgical gloves were used and DNA was extracted and was preserved in Eppendorf microcentrifuge tubes containing ethanol. It mentions that none of the specimens showed any clinical signs of infection but chytridiomycosis should be added as potential threat, as its presence is confirmed.

The article discusses a study which investigated ectoparasites found in endangered spiny-tailed iguana, Ctenosaura bakeri, in Isla de Utila, Honduras. The iguanas were collected from three different mangrove areas, the Blue Bayou, Iron Bound and Big Bight Pond. The three ectoparasites found in the iguanas are Ornithodorus talaje, Amblyomma dissimile and Hirstiella boneti. The ear openings and the limbs were the preferred attachment of H. boneti. Infestation was found to be more prevalent in male iguanas than female iguanas.

The article presents information on a research study conducted in order to discover three new species of plethodontid salamanders of the genus Oedipina on the basis of combined molecular and morphological data. It discusses the demonstration of two new species Oedipina kasios and Oedipina quadra through molecular analysis. It further discusses the confirmation of new species identification by the analysis of mitochondrial deoxy ribonucleic acid sequence data for the gene 16S. It also discusses the natural history, ecology, and habitats of the new species.

Memristive devices are novel electronic devices, which resistance can be tuned by an external voltage in a non-volatile way. Due to their analog resistive switching behavior, they are considered to emulate the behavior of synapses in neuronal networks. In this work, we investigate memristive devices based on the field-driven redox process between the p-conducting Pr 0.7 Ca 0.3 MnO 3 (PCMO) and different tunnel barriers, namely, Al 2 O 3 , Ta 2 O 5 , and WO 3 . In contrast to the more common filamentary-type switching devices, the resistance range of these area-dependent switching devices can be adapted to the requirements of the surrounding circuit. We investigate the impact of the tunnel barrier layer on the switching performance including area scaling of the current and variability. Best performance with respect to the resistance window and the variability is observed for PCMO with a native Al 2 O 3 tunnel oxide. For all different layer stacks, we demonstrate a spike timing dependent plasticity like behavior of the investigated PCMO cells. Furthermore, we can also tune the resistance in an analog fashion by repeated switching the device with voltage pulses of the same amplitude and polarity. Both measurements resemble the plasticity of biological synapses. We investigate in detail the impact of different pulse heights and pulse lengths on the shape of the stepwise SET and RESET curves. We use these measurements as input for the simulation of training and inference in a multilayer perceptron for pattern recognition, to show the use of PCMO-based ReRAM devices as weights in artificial neural networks which are trained by gradient descent methods. Based on this, we identify certain trends for the impact of the applied voltages and pulse length on the resulting shape of the measured curves and on the learning rate and accuracy of the multilayer perceptron., Competing Interests: The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest., (Copyright © 2021 Gutsche, Siegel, Zhang, Hambsch and Dittmann.)