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2. Remote oxygen-containing hydrogen plasma treatment of porous silicon.

Author

Grüning, U., Gujrathi, S. C., Poulin, S., Diawara, Y., and Yelon, A.

Subjects
*PLASMA gases, *SEMICONDUCTOR wafers, *SILICON
Abstract

Presents a study that analyzed the effects of treatment with remote oxygen-containing plasma on electrochemically etched porous silicon semiconductor wafers. Examination of the photoluminescence intensity of plasma-treated film wafers; Determination of the surface chemical composition of the film; Evaluation of the infrared measurements of the samples.

Published
1994

3. The determination of phases formed in AISiCu/Tin/Ti contact metallization structure of integrated...

Author

Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., and Biberger, M.

Subjects
X-ray diffractometers
Abstract

Presents a study which eamines x-ray diffraction (XRD) results that will be useful to understand and explain the main effects on the TiN barrier integrity due to the annealing temperature, the air exposure, the ARC layer, the TiN thickness and the substrate. Formation of phases at Al alloy TiN interface; Discussion and results of the study; Discussion on circuit problems.

Published
1998
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4. The effect of an oxygen plasma exposure on the reliability of a Ti/TiN contact metallization.

Author

Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Biberger, M., and Reynolds, R.

Subjects
TITANIUM, METALLIZING, PLASMA gases, THERMAL stresses
Abstract

Focuses on a study concerning the effect of oxygen plasma exposure on the contact metallization of titanium and nitrogen. Discussion of the barrier of titanium and nitrogen in oxygen plasma; Application of elastic recoil detection measurements; Effect of thermal stress and capacitor polysilicon.

Published
1996
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5. Positron study of plasma-enhanced chemical vapor deposited silicon nitride films.

Author

Landheer, D., Aers, G. C., Sproule, G. I., Khatri, R., Simpson, P. J., and Gujrathi, S. C.

Subjects
SILICON nitride, THIN films, PLASMA-enhanced chemical vapor deposition, POSITRON annihilation
Abstract

Focuses on silicon nitride films grown by plasma-enhanced chemical vapor deposition. Application of positron annihilation spectroscopy combined with Auger electron depth profiling; Measurement of the electric field induced in the silicon substrate; Electric field in the substrate required to fit the slope of the S parameter spectrum.

Published
1995
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7. Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films.

Author

El Khakani, M. A., Chaker, M., Jean, A., Boily, S., Pépin, H., Kieffer, J. C., and Gujrathi, S. C.

Subjects
CHEMICAL vapor deposition, THIN films, SILICON carbide, ANNEALING of metals, PHOTOELECTRON spectroscopy
Abstract

Examines the stress evolution of plasma enhanced chemical vapor deposition hydrogenated amorphous silicon carbide films by increasing the annealing temperature. Preparation of the films; Infrared absorption analysis; Information on the X-ray photoelectron spectroscopy analysis.

Published
1993
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16. The use of elastic recoil detection for stoichiometry determination of reactively evaporated TiN layers.

Author

Gagnon, G., Currie, J. F., Brebner, J. L., Gujrathi, S. C., and Ouellet, L.

Subjects
THIN films, RAPID thermal processing
Abstract

Presents a study that produced thin TiN layers by reactive evaporation combined with rapid thermal annealing. Stoichiometry of the TiN layers; Properties of TiN for microelectronic technology; Description of elastic recoil detection.

Published
1993
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27. Mechanical properties of silicon carbide films for X-ray lithography application

Author

Jean, A., primary, Khakani, M. A. El, additional, Chaker, M., additional, Gat, E., additional, Dodier, J., additional, Papadopoullos, A., additional, Lafontaine, H., additional, Pépin, H., additional, Kieffer, J. C., additional, Ravet, M. F., additional, Madouri, A., additional, Bourneix, J., additional, Rousseaux, F., additional, and Gujrathi, S. C., additional

Published
1992
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38. States inN=80140Nd populated in the decay of140Pm

Author

Kennedy, G. G., Gujrathi, S. C., and Mark, S. K.

Abstract

The level structure of theN=80,140Nd has been investigated through the beta decay of140mPm and140gPm, whose decay half-lives were measured to be 5.95±0.05 min and 9.1±0.5 sec, respectively. Decay schemes for the two isomers have been constructed from?-ray measurements. With the help of the beta decayft values and internal conversion electron measurements, spins and parities were deduced for levels in140Nd. Among the levels a 7- state at 2222.0 keV and a 5- state at 2273.3 keV are identified as two-neutron quasiparticle states. The (ie233-01) for140mPm and140gPm have been deduced as 7- and 1+, respectively. From beta end-point measurements, the decay energies of the two isomers have been determined asQEC=6.48±0.07 MeV140m(Pm) andQEC=6.08±0.10 MeV (140gPm). The results are discussed in the light of nuclear systematics of theN=79 and 80 isotones.

Published
1975
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39. Structure of140Pm from beta decay of140Sm

Author

Deslauriers, J., Gujrathi, S. C., and Mark, S. K.

Abstract

The structure of140Pm is investigated through the beta decay of140Sm, whose half-life is measured to be (14.7 ± 0.2) m. A level structure comprising 41 transitions among 17 excited states is constructed. Using the deduced ft values and measured internal conversion coefficients, spin-parity assignments to several states in140Pm were made. From beta end-point measurement, the total decay energy is deduced to beQEC=3.4±0.3 MeV, which is compared with the predictions of several mass formulae. The systematics of the odd-Z, N=79 isotones are discussed.

Published
1987
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40. Structure of even-even138Nd from the decay of138Pm

Author

Deslauriers, J., Gujrathi, S. C., and Mark, S. K.

Abstract

The structure of138Nd is investigated through theß+-decay of138Pm, whose decay half-life is measured to be 3.24±0.05 min. A level structure comprising 27 excited states and 52 transitions is constructed. With the help of deducedft values and internal conversion coefficients, spin-parity assignments are made to many states in138Nd and to the ground states of138Pm. From the positron end-point energy measurement, the total decay energy is determined to be 5.4±0.2 MeV, which is compared with the predictions of several mass formulae and with the decay energy systematics of theN=77 isotones. The structure of138Nd is discussed in the light of nuclear systematics of theN=78 isotones.

Published
1981
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41. The141Eu nuclide and its decay properties

Author

Deslauriers, J., Gujrathi, S. C., and Mark, S. K.

Abstract

The nuclide141Eu is identified to have two beta decaying isomers,141gEu and141mEu, whose decay half-lives are measured to be 40.0±0.7 s and 3.3±0.3s, respectively. Their decay properties are studied by means of beta and gamma spectroscopy techniques. The states withJp assignments in141Sm thus deduced are compared with those of the other odd-A, N=79 isotones. The total decay energy of141gEu is measured to be 6.03±0.10 MeV, which is compared with the predictions of several mass formulae and with the decay energy systematics of theN=78 isotones. The141gEu and141mEu are deduced to haveJp=5/2+ and 11/2-, respectively. A 96.4 keV isomeric transition between them is found to be anE3 transition with aB(E3)=1.6±0.4e2fm6. The structure of141Eu is compared with that of the otherN = 78 isotones.

Published
1977
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