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1. Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser deposition

Author

Laura C. Sauze, Nicolas Vaxelaire, Roselyne Templier, Denis Rouchon, François Pierre, Cyril Guedj, Denis Remiens, Guillaume Rodriguez, Marie Bousquet, Florian Dupont, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Université Grenoble Alpes (UGA), Département Composants Silicium (DCOS), and no information

Subjects
Inorganic Chemistry, [SPI]Engineering Sciences [physics], Pulsed Laser Deposition, Materials Chemistry, epitaxy, Piezoelectric thin films, Lithium niobate, Condensed Matter Physics
Abstract

International audience; With the deployment of the 5th Generation of mobile applications (5G), the performances of radio-frequency (RF) filters are pushed to their limits. Highly crystalline piezoelectric materials with an electromechanical coupling coefficient higher than aluminium nitride are of high interest. Lithium niobate (LiNbO3), with an electromechanical coupling coefficient from 5 % to 45 % for bulk waves, appears to be a promising candidate for a next generation of RF filters. However, despite decades of research, the growth of single-phased, stoichiometric and highly crystalline LiNbO3 thin films is still very challenging.In the present work, 200 nm-thick LiNbO3 films have been grown by pulsed laser deposition on congruent LiNbO3 substrates with various crystalline orientations: X-cut (i.e. (1 1 0)), Y-cut (i.e. (1 0 0)) and Z-cut (i.e. (0 0 1)). The influence of the substrate’s crystal cut on the physical and chemical properties of the LiNbO3 films is investigated. A High-Resolution X-ray Diffraction methodology is developed to characterize the crystalline properties of the homoepitaxial layers. In all cases, single-phased and epitaxial LiNbO3 thin films are obtained. These results indicate that a standard wafer-based PLD system can be used to grow LiNbO3 thin films with a crystalline quality and a stoichiometry very close to a LiNbO3 monocrystalline substrate.

Published
2023
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3. Effect of the annealing treatment on the physical and structural properties of LiNbO3 thin films deposited by radio-frequency sputtering at room temperature

Author

Denis Rouchon, Nicolas Vaxelaire, Florian Dupont, Denis Remiens, Laura C. Sauze, Roselyne Templier, Guillaume Rodriguez, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), This research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors., Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Electromechanical coupling coefficient, Materials science, Annealing (metallurgy), 02 engineering and technology, Substrate (electronics), 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Monocrystalline silicon, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Sputtering, Thermal, 0103 physical sciences, Materials Chemistry, Texture (crystalline), Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Materials, 010302 applied physics, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], business.industry, Aluminium nitride, Metals and Alloys, Surfaces and Interfaces, Lithium niobate, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Treatment, chemistry, Radio-Frequency sputtering, Optoelectronics, Piezoelectric, Crystal texture, 0210 nano-technology, business
Abstract

International audience; Reaching the full potential of the 5th Generation of mobile applications (5G) requires pushing the performances of acoustic radio-frequency (RF) filters beyond their current limits. Current high-performances RF filters (above 2.5 GHz) are based on aluminium nitride (AlN). Their bandwidth is however limited by the low electromechanical coupling coefficient of AlN. In this context, due to its higher electromechanical coupling coefficient, lithium niobate (LiNbO3) is a good candidate as an active piezoelectric material. For this application, LiNbO3 films need to be stoichiometric and to be either highly textured or monocrystalline. However, there seems to be no deposition process for high quality LiNbO3 thin films on silicon available at the moment, which could be mainly due to the difficulty to achieve a high crystalline quality and to the challenging control and of its stoichiometry. In the present work, the realization of highly textured films deposited directly on silicon substrate by RF sputtering at room temperature and after annealing was demonstrated. The effect of the annealing parameters (temperature and ramping rates) was studied. LiNbO3 layers with a strong degree of texture along the c-axis were obtained. The X-ray diffraction analysis showed that an optimum texture of 99% can be reached by a high temperature of annealing and a fast temperature ramping rate. The effect of annealing parameters on the presence of secondary phase LiNb3O8 and film density was also investigated.

Published
2021
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4. NbN-on-Si superconducting nanowire single photon detectors: effect of a sputtered AlN buffer layer

Author

H. Machhadani, Raouia Rhazi, Eva Monroy, Jean-Luc Thomassin, Jean-Michel Gérard, Stéphane Lequien, Richard Souil, Segolene Olivier, Catherine Bougerol, Guillaume Rodriguez, Nicolas Mollard, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Modélisation et Exploration des Matériaux (MEM), and Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS)

Subjects
Superconductivity, [PHYS]Physics [physics], Materials science, business.industry, Detector, Nanowire, Superconducting nanowire single-photon detector, [SPI]Engineering Sciences [physics], Condensed Matter::Superconductivity, Qubit, Optoelectronics, Wafer, Photonics, Thin film, business
Abstract

Superconducting nanowire single photon detectors stand today as the best technology, due to their near-unity detection efficiency, low dark count rates, and low timing jitter. In this work, we demonstrate the improvement of the superconducting properties of NbN thin films on 8” silicon-on-insulator wafers by using an ultra-thin (10-15 nm) sputtered AlN buffer layer. The higher crystalline quality of NbN, leads to an increase of the superconducting critical temperature up to 10 K for 9-nm-thick NbN films. The material was validated for single photon detection using a fiber-coupled vertical SNSPD with half-cavity architecture. This results opens the way for the development of CMOS compatible waveguide-integrated detectors. The implementation of such guided devices is a keystone for the development of a fully integrated quantum photonics platform able to generate, manipulate and detect a large number of photonic qubits for secure communications and quantum computing applications.

Published
2021
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5. Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer

Author

Raouia Rhazi, Catherine Bougerol, Eva Monroy, Jean-Luc Thomassin, Jean-Michel Gérard, Yohan Desieres, H. Machhadani, Guillaume Rodriguez, Stéphane Lequien, Richard Souil, Segolene Olivier, Nicolas Mollard, Eric Robin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Modélisation et Exploration des Matériaux (MEM), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), Département d'Optronique (DOPT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Nanophysique et Semiconducteurs (NEEL - NPSC), and ANR-18-CE47-0013,OCTOPUS,Qubits de spin adressables optiquement dans le silicium 28(2018)

Subjects
Fabrication, Niobium nitride, Materials science, Silicon, Nanowire, chemistry.chemical_element, Superconducting nanowire single-photon detector, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Sputtering, superconducting nanowire single photon detector, 0103 physical sciences, Materials Chemistry, Wafer, Electrical and Electronic Engineering, 010306 general physics, AlN, 010302 applied physics, [PHYS]Physics [physics], business.industry, Metals and Alloys, Condensed Matter Physics, superconducting material, chemistry, NbN, Ceramics and Composites, Optoelectronics, business, Layer (electronics)
Abstract

In this paper, we study the crystalline properties and superconducting critical temperature of ultra-thin (5–9 nm) NbN films deposited on 8-inch silicon wafers by reactive sputtering. We show that the deposition of NbN on a thin (10–20 nm) AlN buffer layer, also synthesized by reactive sputtering, improves the critical temperature by several Kelvin, up to 10 K for 9 nm NbN on 20 nm AlN. We correlate this improvement to the higher-crystalline quality of NbN on AlN. While NbN deposited directly on silicon is polycrystalline with randomly oriented grains, NbN on AlN(0001) is textured along (111), due to the close lattice match. The superconducting properties of the NbN/AlN stack are validated by the demonstration of fibre-coupled normal-incidence superconducting nanowire single photon detectors. The whole fabrication process is CMOS compatible, with a thermal budget compatible with the integration of other passive and active components on silicon. These results pave the way for the integration of a large number of surface or waveguide-integrated detectors on large-scale silicon wafers. Furthermore, as AlN is transparent over a broad wavelength range from the visible to the near-infrared, the optimized superconducting NbN/AlN stack can be used for a wide variety of applications, from imaging to quantum communications and quantum computing.

Published
2021
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6. (Invited) Lithium-Based Components Integrated on Silicon: Disruptive, Promising and Credible Solutions for 5G & Beyond

Author

Yann Lamy, Florian Dupont, Guillaume Rodriguez, Messaoud Bedjaoui, Pierre Perreau, Marie Bousquet, Alexandre Reinhardt, and Sami Oukassi

Abstract

Following a trend similar to Moore’s low which prevailed for decades for active circuits, RF integrated passive components have reinvented themselves over the years in order to sustain continuous performance and size requirements. Their roadmap is still unrolling, thanks to a wide variety of new materials integration: high-k dielectrics for capacitors[1] ,[2] , magnetic material for inductors [3], aluminium nitride[4] (now scandium doped) for RF filters, or more recently phase-change materials for RF switches[5]. In the last few years, RF integrated passives built upon Lithium-based materials have attracted strong attention because of their state-of-the-art performances and their direct integration on silicon wafers. Lithium-based piezoelectric materials are used since 40 years by the SAW filters industry, which processes LiTaO3 (LTO) or LiNbO3 (LNO) bulk wafers in dedicated fabs. Recently, however, layered SAW devices exploiting thin films of these materials directly on a silicon wafer have exhibited dramatically improved performances. These devices leverage the latest developments in single crystal Li-based layer transfer, or in deposition techniques (PVD, ALD[6], Pulse-Laser-Deposition, ...) of epitaxial, textured, or amorphous Li-based thin films, all of which achievable in industrial grade semiconductor equipments. In this presentation, we will give an overview of the potential of integrating lithium-based materials on silicon through different examples of promising RF components for 5G. First, we will show how the availability of Li-based Piezoelectric-on-Insulator (POI) wafers[7] is a game changer for 5G filtering. We will present very promising perspectives regarding the development of LNO-based Bulk Acoustics Wave filters (BAW)[8] ,[9],[10] which aim at extending the application space of POI SAW filters towards the upper 5G bands and even Wi-Fi 6E [5-7 GHz] . Different examples of Li-based materials integrations will be given3,4,5,[11] . Secondly, we will discuss the potential of a new type of Li-based hybrid micro supercapacitors integrated on silicon. LiPON thin films offer a unique combination of dual properties, being both a dielectric and an electrolyte[12]. Their integration on silicon is not only bringing potentially ultra-high capacitance densities, but also local on-chip energy storage for 5G components, opening a new paradigm in use of the device in a system[13] ,[14] . After that, we will open the horizon of the potential of Li-based materials integration towards other types of RF devices, like RF switchs, and elaborate on their synergy with Li-transistors for neuromorphic applications[15] and with more conventional lithium microbatteries integrated on silicon[16]. Finally, the integration of Lithium in a silicon industrial environment and the remaining challenges will be discussed. The similarities and discrepancies of the different Li-based processes will be analyzed as well as the compatibility with a silicon CMOS and/or microsystem fab, and the potential for wafers size scaling. Risks like sensitivity to humidity and potential Li contamination will be outlined with some relevant preventive protocols in order to make the Lithium integration on silicon a real and credible disruptive solution regarding 5G challenges. [1] F. Roozeboom, et al. ECS 2007 [2] M. Bousquet et al., ECAPD 2014 [3] J. P. Michel et al., IEEE Trans. Magnetics 55, n°7, pp. 1-7 (2019) » [4] A. Reinhardt et al., IFCS 2011 [5] A. Leon et al., IEEE Trans. Microwave Theory and Techniques, vol. 68, n°1, pp. 60-73 (2020)” [6] M. Bedjaoui et al. ECS Meeting (October 10-14, 2021). [7] E. Butaud et al. IEDM 2020 [8] M. Bousquet et al., Proc. IEEE International Ultrasonics Symposium 2019. [9] M. Bousquet et al., Proc. IEEE International Ultrasonics Symposium 2020. [10] A. Reinhardt et al., Proc. Joint Conference of EFTF & IFCS 2021 [11] L. Sauze et al, Thin solid films, 726, may 2021 [12] L. Le Van-Jodin et al, Solid State ionic, 2013 [13] V. Sallaz et al, Journal of Power Source, 2020 [14] V. Sallaz et al. submitted to ECS 2021 [15] N-A Ngyuen et al,” submitted to ECS 2021 [16] S. Oukassi et al, IEDM 2019

Published
2022
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7. Microstructural and chemical analysis of polycrystalline LiNbO3 films obtained by room-temperature RF sputtering after various annealing durations

Author

Denis Rouchon, Nicolas Vaxelaire, Roselyne Templier, Laura C. Sauze, Guillaume Rodriguez, Denis Remiens, F. Pierre, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], Materials science, Silicon, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, Surfaces and Interfaces, Thermal treatment, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, [SPI.MAT]Engineering Sciences [physics]/Materials, Secondary ion mass spectrometry, [SPI]Engineering Sciences [physics], X-ray photoelectron spectroscopy, chemistry, Sputtering, Physical vapor deposition, 0103 physical sciences, Crystallite, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract

International audience; The development of materials for industrial applications is in constant evolution. Regarding environmental or health laws, the use of some materials is restricted (lead-based). In this context, lithium niobate (LiNbO3) is studied in order to develop the performances of the RF (radio frequency) applications (for instance, filters using the bulk acoustic wave or surface acoustic wave technology). The deposition of LiNbO3 is mainly performed by chemical or physical vapor deposition and solgel techniques, resulting in polycrystalline films with or without a preferred orientation. For RF applications, LiNbO3 films need to be highly textured with a preferred orientation among the (006) plane in order to maximize the electrical response. In the present work, 150 nm thick LiNbO3 films were grown by RF sputtering at room temperature on Si substrates with native SiO2. The films were annealed at 950 °C, with an original process, for various durations. Polycrystalline yet (006) preferentially oriented LiNbO3 films were obtained on silicon. The properties of the as-deposited and annealed films were analyzed by x-ray diffraction (XRD), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and scanning electron microscopy (SEM). The annealing treatment effect was highlighted by symmetric XRD analysis. The adhesion of the films is confirmed by SEM analysis. The diffusion profile of Li was characterized by SIMS and XPS analyses. This process, mainly based on a specific annealing treatment, leads to the synthesis of nearly stoichiometric LiNbO3 on silicon, and the effect of the thermal treatment on the texture of the film is highlighted.

Published
2020
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8. Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)

Author

C. Pellissier, Etienne Nowak, S. Chevalliez, Furqan Mehmood, F. Mazen, T. Francois, Uwe Schroeder, F. Triozon, Sebastien Kerdiles, Thomas Mikolajick, F. Gaillard, Guillaume Rodriguez, T. Magis, Laurent Grenouillet, Viktor Havel, Jean Coignus, C. Carabasse, Nicolas Vaxelaire, and Stefan Slesazeck

Subjects
010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, Coercivity, Laser, 01 natural sciences, Ferroelectricity, law.invention, Back end of line, Capacitor, chemistry, CMOS, law, 0103 physical sciences, Optoelectronics, Wafer, business
Abstract

10nm Si-implanted HfO 2 is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled $.28\mu \mathrm{m}^{2}$ . capacitors demonstrate excellent endurance (109 cycles measured at 4 V, extrapolated to be 1012 at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO 2 - based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO 2 .

Published
2020
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9. Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips

Author

Guillaume Rodriguez, M.L. Charles, Lilian Masarotto, A. Roule, Laurent Frey, C. Morales, R. Souil, V. Larrey, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département d'Optronique (DOPT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Minalogic competitiveness pole, European Union FEDER, and DGCIS national board for industry renewal

Subjects
Materials science, Thin films, Hardware_PERFORMANCEANDRELIABILITY, Direct bonding, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Interference (communication), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Wafer, Image sensor, Optical filter, Process characterization, Wavelength filtering devices, 010302 applied physics, CMOS sensor, Optical properties, Materials characterization, business.industry, Metals and Alloys, Surfaces and Interfaces, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Transmission (telecommunications), CMOS, Optoelectronics, business
Abstract

International audience; We present in this paper a method to measure the transmission spectra of optical filters composed of Complementary Metal-Oxide-Semiconductor (CMOS) compatible materials thin layers in order to be fully integrated on various types of CMOS image sensors (ambient light sensors, proximity detection, red green blue colour imaging, etc.). As the filters have to be deposited on top of a CMOS device, a good approach in order to evaluate with accuracy their response on chip is (i) to achieve the stacks on Siwafers (as it is the case for the CMOS sensor) (ii) then to perform a direct bonding of the structure on glass wafers (iii) in the end to remove the entire bulk silicon. In this way, we show the measured spectral responses of multilayer interference filters and can check particularly the agreement of the transmission peak with the theoretical calculations and its reproducibility wafer to wafer. It enables to optimize the filters optical designs and to demonstrate that the developed filters fulfill typical CMOS requirements of integration and reliability.

Published
2017
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10. Guidelines for intermediate back end of line (BEOL) for 3D sequential integration

Author

Vincent Delaye, D. Nouguier, Zineb Saghi, N. Rambal, Claire Fenouillet-Beranger, Olivier Rozeau, V. Balan, Philippe Rodriguez, Francois Andrieu, Maud Vinet, S. Beaurepaire, A. Ayres de Sousa, C. Guerin, P. Besombes, Laurent Brunet, Vincent Jousseaume, H. Dansas, M.-P. Samson, F. Proud, Bernard Previtali, D. Ney, R. Famulok, F. Deprat, F. Ibars, Guillaume Rodriguez, Perrine Batude, Xavier Federspiel, and Fabrice Nemouchi

Subjects
Very-large-scale integration, Engineering, Interconnection, business.industry, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, 0104 chemical sciences, Back end of line, Stack (abstract data type), Electronic engineering, Thermal stability, 0210 nano-technology, business
Abstract

For the first time the thermal stability of a new fluorine-free (F-free) W barrier coupled with W interconnections enabling 22% line 1 resistance improvement is evaluated in view of 3D VLSI integration. Integrated with ULK, no resistance nor lateral capacitance degradation is observed up to 550°C 5h while preserving good reliability. For additional thermal stability a TEOS/W stability is demonstrated up to 600°C 2h. Both types of interconnection stacks have been successfully integrated on devices with 28nm design rules and show similar performance for MOSFETs and Ring Oscillators (RO) as compared to the ULK/Cu stack. Finally, iBEOL guidelines are given at the end in view of 3D sequential integration.

Published
2017
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11. Elemental depth profiling in transparent conducting oxide thin film by X-ray reflectivity and grazing incidence X-ray fluorescence combined analysis

Author

H. Rotella, A. Valla, B. Caby, Yann Mazel, Emmanuel Nolot, Guillaume Rodriguez, Marie-Christine Lépy, Christina Streli, A. Novikova, B. Detlefs, Y. Ménesguen, D. Ingerle, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire National Henri Becquerel (LNHB), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Atominstitut, Vienna University of Technology (TU Wien), This project has been supported by the European Metrology Research Programme (EMRP) Project ENG53-ThinErgy which isjointly funded by the EMRP participating countries within EURAMET and the European Union., European Project: ENG53,ThinErgy, Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Département d'instrumentation Numérique (DIN (CEA-LIST)), Département des Technologies Solaires (DTS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Atominstitut [Wien], Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
optical properties, Materials science, Band gap, Annealing (metallurgy), thin film, non-destructive characterization, Analytical chemistry, X-ray fluorescence, 02 engineering and technology, XRR, 01 natural sciences, Analytical Chemistry, spectroscopic ellipsometry, ZNO, Transparent conducting oxides, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Reflectometry, Spectroscopy, instrumentation, structural properties, Dopant, [PHYS.PHYS.PHYS-ATOM-PH]Physics [physics]/Physics [physics]/Atomic Physics [physics.atom-ph], Grazing-Incidence X-ray Fluorescence (GIXRF), 010401 analytical chemistry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, X-ray reflectometry (XRR), 0104 chemical sciences, X-ray reflectivity, SPECTROMETRY, Depth profiling, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Transparent conducting oxide, GIXRF, annealing, 0210 nano-technology, ionizing radiation, chemical properties, Electronic density
Abstract

International audience; The optical and electrical properties of transparent conducting oxide (TCO) thin films are strongly linked with the structural and chemical properties such as elemental depth profile. In R&D environments, the development of non-destructive characterization techniques to probe the composition over the depth of deposited films is thus necessary. The combination of Grazing-Incidence X-ray Fluorescence (GIXRF) and X-ray reflectometry (XRR) is emerging as a fab-compatible solution for the measurement of thickness, density and elemental profile in complex stacks. Based on the same formalism, both techniques can be implemented on the same experimental set-up and the analysis can be combined in a single software in order to refine the sample model. While XRR is sensitive to the electronic density profile, GIXRF is sensitive to the atomic density (i. e. the elemental depth profile). The combination of both techniques allows to get simultaneous information about structural properties (thickness and roughness) as well as the chemical properties. In this study, we performed a XRR-GIXRF combined analysis on indium-free TCO thin films (Ga doped ZnO compound) in order to correlate the optical properties of the films with the elemental distribution of Ga dopant over the thickness. The variation of optical properties due to annealing process were probed by spectroscopic ellipsometry measurements. We studied the evolution of atomic profiles before and after annealing process. We show that the blue shift of the band gap in the optical absorption edge is linked to a homogenization of the atomic profiles of Ga and Zn over the layer after the annealing. This work demonstrates that the combination of the techniques gives insight into the material composition and makes the XRR-GIXRF combined analysis a promising technique for elemental depth profiling.

Published
2017
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12. Conditional Bistability, a Generic Cellular Mnemonic Mechanism for Robust and Flexible Working Memory Computations

Author

Guillaume, Rodriguez, Matthieu, Sarazin, Alexandra, Clemente, Stephanie, Holden, Jeanne T, Paz, and Bruno, Delord

Subjects
Neurons, Quantitative Biology::Neurons and Cognition, Pyramidal Cells, Models, Neurological, Action Potentials, White Matter, Memory, Short-Term, Synapses, Humans, Computer Simulation, Calcium Channels, Neural Networks, Computer, Nerve Net, Wakefulness, Algorithms, Research Articles
Abstract

Persistent neural activity, the substrate of working memory, is thought to emerge from synaptic reverberation within recurrent networks. However, reverberation models do not robustly explain the fundamental dynamics of persistent activity, including high-spiking irregularity, large intertrial variability, and state transitions. While cellular bistability may contribute to persistent activity, its rigidity appears incompatible with persistent activity labile characteristics. Here, we unravel in a cellular model a form of spike-mediated conditional bistability that is robust and generic. and provides a rich repertoire of mnemonic computations. Under asynchronous synaptic inputs of the awakened state, conditional bistability generates spiking/bursting episodes, accounting for the irregularity, variability, and state transitions characterizing persistent activity. This mechanism has likely been overlooked because of the subthreshold input it requires, and we predict how to assess it experimentally. Our results suggest a reexamination of the role of intrinsic properties in the collective network dynamics responsible for flexible working memory. SIGNIFICANCE STATEMENT This study unravels a novel form of intrinsic neuronal property: conditional bistability. We show that, thanks to its conditional character, conditional bistability favors the emergence of flexible and robust forms of persistent activity in PFC neural networks, in opposition to previously studied classical forms of absolute bistability. Specifically, we demonstrate for the first time that conditional bistability (1) is a generic biophysical spike-dependent mechanism of layer V pyramidal neurons in the PFC and that (2) it accounts for essential neurodynamical features for the organization and flexibility of PFC persistent activity (the large irregularity and intertrial variability of the discharge and its organization under discrete stable states), which remain unexplained in a robust fashion by current models.

Published
2017

13. Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Author

Maud Vinet, H. Grampeix, Emmanuel Dubois, Magali Gregoire, Emmanuel Nolot, Yves Morand, Magali Tessaire, J. Borrel, Guillaume Rodriguez, Fabrice Nemouchi, Louis Hutin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), STMicroelectronics [Grenoble] (ST-GRENOBLE), Jiang, YL, Qu, XP, Ru, GP, Li, BZ, and Laboratoire commun STMicroelectronics-IEMN T4

Subjects
010302 applied physics, Materials science, business.industry, Insulator (electricity), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, 0103 physical sciences, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Metal insulator, 0210 nano-technology, business
Abstract

International audience; In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

Published
2016

14. Nicotinic receptors in the ventral tegmental area promote uncertainty-seeking

Author

Uwe Maskos, Philippe Faure, Sébastien Valverde, Fabio Marti, Alexandre Mourot, Guillaume Rodriguez, Malou Dongelmans, Nicolas Torquet, Stefania Tolu, Stéphanie Pons, Jérémie Naudé, Institut de Biologie Paris Seine (IBPS), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Neurobiologie intégrative des Systèmes cholinergiques, Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut Pasteur [Paris]-Centre National de la Recherche Scientifique (CNRS), Neurophysiologie et comportements = Neurophysiology and Behavior (NPS-06), Neuroscience Paris Seine (NPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Biologie Paris Seine (IBPS), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Biologie Paris Seine (IBPS), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), This work was supported by the Centre National de la Recherche Scientifique CNRS UMR 8246, the University Pierre et Marie Curie (Programme Emergence 2012 for J.N. and P.F.), the Agence Nationale pour la Recherche (ANR Programme Blanc 2012 for P.F., ANR JCJC to A.M.), the Neuropole de Recherche Francilien (NeRF) of Ile de France, the Foundation for Medical Research (FRM, Equipe FRM DEQ2013326488 to P.F.), the Bettencourt Schueller Foundation (Coup d'Elan 2012 to P.F.), the Ecole des Neurosciences de Paris (ENP) to P.F., the Fondation pour la Recherche sur le Cerveau (FRC et les rotariens de France, 'espoir en tête' 2012) to P.F. and the Brain & Behavior Research Foundation for a NARSAD Young Investigator Grant to A.M. The laboratories of P.F. and U.M. are part of the École des Neurosciences de Paris Ile-de-France RTRA network. P.F. and U.M. are members of the Laboratory of Excellence, LabEx Bio-Psy, and P.F. is member of the DHU Pepsy., We thank E. Guigon for discussions, C. Prévost-Solié for technical support, and J.-P. Changeux, E. Ey, G. Dugué and A. Boo for comments on the manuscript., Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Neurobiologie intégrative des Systèmes cholinergiques (NISC), Neurosciences Paris Seine (NPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Biologie Paris Seine (IBPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Biologie Paris Seine (IBPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut Pasteur [Paris] (IP)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Biologie Paris Seine (IBPS), and Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
0301 basic medicine, MESH: Mice, Transgenic, [SDV]Life Sciences [q-bio], MESH: Motivation, Mice, Transgenic, Receptors, Nicotinic, Learning algorithms, MESH: Mice, Knockout, 03 medical and health sciences, Bursting, [SCCO]Cognitive science, Self Stimulation, 0302 clinical medicine, Reward, Dopamine, mental disorders, MESH: Dopaminergic Neurons, medicine, Animals, MESH: Animals, MESH: Self Stimulation, Acetylcholine receptor, MESH: Reward, Mice, Knockout, Motivation, Dopaminergic Neurons, General Neuroscience, musculoskeletal, neural, and ocular physiology, [SCCO.NEUR]Cognitive science/Neuroscience, Ventral Tegmental Area, Uncertainty, Translation (biology), Cortex (botany), Ventral tegmental area, 030104 developmental biology, medicine.anatomical_structure, Nicotinic agonist, nervous system, MESH: Ventral Tegmental Area, MESH: Receptors, Nicotinic, Psychology, Neuroscience, 030217 neurology & neurosurgery, Acetylcholine, MESH: Uncertainty, medicine.drug
Abstract

International audience; Cholinergic neurotransmission affects decision-making, notably through the modulation of perceptual processing in the cortex. In addition, acetylcholine acts on value-based decisions through as yet unknown mechanisms. We found that nicotinic acetylcholine receptors (nAChRs) expressed in the ventral tegmental area (VTA) are involved in the translation of expected uncertainty into motivational value. We developed a multi-armed bandit task for mice with three locations, each associated with a different reward probability. We found that mice lacking the nAChR β2 subunit showed less uncertainty-seeking than their wild-type counterparts. Using model-based analysis, we found that reward uncertainty motivated wild-type mice, but not mice lacking the nAChR β2 subunit. Selective re-expression of the β2 subunit in the VTA was sufficient to restore spontaneous bursting activity in dopamine neurons and uncertainty-seeking. Our results reveal an unanticipated role for subcortical nAChRs in motivation induced by expected uncertainty and provide a parsimonious account for a wealth of behaviors related to nAChRs in the VTA expressing the β2 subunit.

Published
2016
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15. High-performance silver-dielectric interference filters for RGBIR imaging

Author

Frédéric Ritton, Guillaume Rodriguez, Agathe André, Loubna El Melhaoui, Lilian Masarotto, Stephane Minoret, Pascale Parrein, Sophie Verrun, Laurent Frey, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Systèmes Intelligents et de Robotique (ISIR), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), and Direction Generale de la Competitivite, de l'Industrie et des Services (DGCIS) (NANO2017 project)

Subjects
Materials science, Pixel, business.industry, Multispectral image, 02 engineering and technology, Filter (signal processing), 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, 010309 optics, [SPI]Engineering Sciences [physics], Optics, Transmission (telecommunications), CMOS, Interference (communication), 0103 physical sciences, RGB color model, Color filter array, 0210 nano-technology, business
Abstract

International audience; New architectures of interference silver-dielectric multilayer filters inspired from induced transmission designs are investigated with the prospect of high-performance red-greenblue (RGB) complementary metal oxide semiconductor imaging. The optimized designs provide combined colorimetric, signal-to-noise ratio and sensitivity performances similar to the traditional organic color filters, but without the equirement of an external infrared (IR)-cut filter, which enables the integration of additional channels such as white or IR, in addition to RGB. Due to the sub-micrometer thickness of the stacks, this is a unique solution for fully integrated, high-performance multispectral filters patterned in very small pixels. The concept is demonstrated by a wafer-scale prototype with RGBIR filters patterned down to 1.4 mu m adjacent pixels with up to 80% transmission.

Published
2018
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16. III-V multi-junction solar cell using metal wrap through contacts

Author

V. Klinger, E. Oliva, Thierry Salvetat, Jean-Sébastien Moulet, Paul-Henri Haumesser, Christophe Lecouvey, Frank Dimroth, Romain Thibon, Thierry Mourier, Aurélie Tauzin, Thomas Signamarcheix, Paul Beutel, Guillaume Rodriguez, Jean-Marc Fabbri, Bruno Imbert, Frank Fournel, Abdelhak Hassaine, and Christophe Jany

Subjects
Resistive touchscreen, Materials science, Silicon, business.industry, chemistry.chemical_element, Epitaxy, law.invention, Metal, Semiconductor, chemistry, law, visual_art, Solar cell, visual_art.visual_art_medium, Optoelectronics, business, Electrical conductor, Tandem solar cell
Abstract

The Solar cell front side is a key design point for improved cell efficiency as a trade is made between optical losses (shadowing effect) and electrical losses (resistance). One solution consists in frontside contacts report to the cell’s backside using through device conductive vias. By this way metal shadowing could be drastically reduced without increasing resistive losses. Such architecture is called Metal Wrap Through (MWT) and has been developed on silicon solar cells. Its application to III-V Multi-Junctions Solar Cells (MJSC) could be of great interest and has been simulated and studied for several years. We present here first functional MWT III-V dual-junction solar cells. Prototype developments have been based on inverted tandem solar cell (GaInP/GaAs) epitaxial structures grown on GaAs substrates. Front side contacts have been reported on the device’s backside using specifically adapted Trough Semiconductor Via (TSV) technologies. Finally, the III-V active film was transferred on a conductive r...

Published
2016
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