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Your search keyword '"Gualtieri, G. J."' showing total 49 results
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49 results on '"Gualtieri, G. J."'

1. Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy.

Author

Gualtieri, G. J., Schwartz, G. P., Nuzzo, R. G., Malik, R. J., and Walker, J. F.

Subjects
*INDIUM, *ARSENIC, *GALLIUM, *ANTIMONY, *SPECTRUM analysis
Abstract

Presents a study that determined the valence-band discontinuity for the (100) indium arsenide/gallium antimony (InAs/GaSb) system by x-ray photoemission core level spectroscopy (XPS). Description of the heterojunction structures used in the experiment; Structure and energy band diagram for thin heterojunctions examined by XPS; Experimental data and other energies required for determining the (100) InAs/GaSb valence-band discontinuity.

Published
1987
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2. Schottky barrier height variations on the polar (111) faces of n-GaP.

Author

Schwartz, G. P. and Gualtieri, G. J.

Subjects
*PHOSPHIDES, *CRYSTALLOGRAPHY, *AUGER effect, *ARGON, *IONS
Abstract

Examines the issue of barrier height variations on the polar (111) faces of gallium phosphide. Magnitude of intrinsic barrier height variations between different crystallographic orientations; Auger spectra for gallium phosphide wafers; Barrier heights on argon ion sputtered gallium phosphide.

Published
1985
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3. Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures.

Author

Gossmann, H.-J., Davidson, B. A., Gualtieri, G. J., Schwartz, G. P., Macrander, A. T., Slusky, S. E., Grabow, M. H., and Sunder, W. A.

Subjects
ALUMINUM compounds, GALLIUM compounds, SUPERLATTICES, X-ray diffraction, THIN films
Abstract

Features a study that measured critical layer thicknesses and strain relaxation for aluminum antimony (AlSb) single layers and gallium antimony/AlSb superlattices. Use of ion scattering, x-ray diffraction and Raman scattering; Ways to determine crystalline quality and strain in thin films; Extraction of the angular position of the minima in the angular scans.

Published
1989
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4. X-ray and Raman characterization of AlSb/GaSb strained layer superlattices and quasiperiodic Fibonacci lattices.

Author

Macrander, A. T., Schwartz, G. P., and Gualtieri, G. J.

Subjects
GALLIUM compounds, MOLECULAR beam epitaxy, SUPERLATTICES, COMPUTER simulation
Abstract

Presents information on a study which analyzed double-crystal rocking curves of samples grown on oriented gallium antimonide substrates by molecular-beam epitaxy by fitting computer simulations to data for the symmetric and reflections and for assymetric reflections. Methodology of the study; Results and discussion; Conclusions.

Published
1988
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13. X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity.

Author

Gualtieri, G. J., Schwartz, G. P., Nuzzo, R. G., and Sunder, W. A.

Subjects
*VALENCE (Chemistry), *GALLIUM compounds, *ALUMINUM compounds, *HETEROJUNCTIONS
Abstract

The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence. [ABSTRACT FROM AUTHOR]

Published
1986
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21. Erratum: ‘‘X-ray and Raman characterization of AlSb/GaSb strained layer superlattices and quasiperiodic Fibonacci lattices’’ [J. Appl. Phys. 64, 6733 (1988)].

Author

Macrander, A. T., Schwartz, G. P., and Gualtieri, G. J.

Subjects
SUPERLATTICES
Abstract

Presents a correction to the study 'X-Ray and Raman Characterization of AlSb/GaSb Strained Layer Superlattices and Quasiperiodic Fibonacci Lattices,' which was published in the 1989 issue of the 'Journal of Applied Physics.'

Published
1989
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46. Response to ‘‘Comment on ‘X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity’ ’’[Appl. Phys. Lett. 50, 1763 (1987)].

Author

Gualtieri, G. J., Schwartz, G. P., Nuzzo, R. G., and Sunder, W. A.

Subjects
*HETEROJUNCTIONS, *PHOTOEMISSION
Abstract

Responds on the article, entitled 'X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity,' by Gualtieri and others. Comparison of core level energy differences measured for the heterojunction; Authors' comparison of their results with spectroscopic values from a variety of sources; Relative merits of obtaining the separation from Schottky barrier data.

Published
1987
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