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CMEMS(CMOS and Micro Electro Mechanical Systems) process is integration of CMEMS and cap wafer, which is realized through bonding process and has been more and more important in IC industry currently. The bonding process is kernel in CMEMS manufacture and is impacted by material, pressure, temperature and so on. In standard bonding process, Al-Ge bonding which is selected for the good adhesion comparing with other bonding material. In this paper, the bonding process conditions are designed according to the structure of CMEMS and characteristics of Al-Ge material, and experiments including leakage rate and bonding strength are implemented to discuss the bonding quality. In the end, suitable bonding process and its summary of side effect for Al-Ge are put forward.

MIM is the three words of metal insulator metal. This structure is always designed into IC device and act as a big capacitor to keep the stable working voltage. In MIM loop, the upper capacitor board is made of thin Al film. Because of this character, the defect on upper capacitor board is difficult to control and even lead yield loss. In this paper, defect of MIM Al layer is introduced and the mechanism is studied. Through DOE test, MIM defect such as arcing and tiny defect can be reduced to a low level and yield can be improved.