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391 results on '"Grandidier B"'

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1. Resolving the structure of the striped Ge layer on Ag(111): Ag$_2$Ge surface alloy with alternate fcc and hcp domains

6. Molecular beam epitaxy of TaSe2 on GaP(111)B

9. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

12. Sonder les phénomènes physiques avec la résolution spatiale et temporelle

13. Electric field driven insulator-to-metal transition in GaMo4S8 studied with the Nanoprobe

14. Characterization of electron transport inside InAs/GaSb quantum nanostructures using four probe scanning tunnelling microscopy

15. Charge carriers dynamics in LT-GaAs/GaAs junction

17. Electronic properties of selective area grown semiconductor heterostructures

18. Electric field driven out of equilibrium insulator to metal transition in Mott insulators

19. Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

20. Resolving the structure of the striped Ge layer on Ag ( 111 ) : Ag 2 Ge surface alloy with alternate fcc and hcp domains

23. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy.

24. List of contributors

27. Assessing the insulating properties of an ultrathin SrTiO3 shell grown around GaAs nanowires with molecular beam epitaxy.

28. Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

29. Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles

35. Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p-type doped InP(001)

36. Supramolecular self-assembly on semiconductor surfaces and outlook

37. Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

38. Chemical nature of the Anion antisite in dilute Phosphide GaAs1-(x)P(x) alloy grown at low temperature

39. Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors

40. Correction: Transport mechanisms in a puckered graphene-on-lattice

41. Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

43. Shallow Heavily Doped n\mathplus\mathplus Germanium by Organo-Antimony Monolayer Doping

44. Évaluation du courant d’obscurité des couches actives de photodétecteurs à base de GaAs

45. Transport mechanisms in a puckered graphene-on-lattice

46. Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage.

48. Electron-phonon coupling and intervalley splitting determine the linewidth of single-electron transport through PbSe nanocrystals.

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