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Large-Area Epitaxial Mott Insulating 1T-TaSe2 Monolayer on GaP(111)B.
- Source :
- Nano Letters; 10/25/2023, Vol. 23 Issue 20, p9413-9419, 7p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 23
- Issue :
- 20
- Database :
- Supplemental Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 173241270
- Full Text :
- https://doi.org/10.1021/acs.nanolett.3c02813