41 results on '"Goddard, L.L."'
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2. Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers
3. GaInNAsSb∕GaAs vertical cavity surface emitting lasers at 1534 nm
4. Room-temperature continuous-wave 1.55 [micro sign]m GaInNAsSb laser on GaAs
5. Low-threshold CW 1.55-/spl mu/m GaAs-based lasers
6. On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers
7. 1.55 /spl mu/m GalnNAsSb lasers on GaAs
8. Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5/spl mu/m
9. Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs
10. Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 [micro sign]m
11. High-performance 1.5 [micro sign]m GaInNAsSb lasers grown on GaAs
12. Pd coated edge-emitting lasers for hydrogen sensing applications.
13. Monolithic, GaInNAsSb VCSELs at 1.46 [micro sign]m on GaAs by MBE
14. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m
15. Photonic MEMS for NIR in-situ Gas Detection and Identification.
16. Functionalized Lateral Surface Coated Lasers for Chem-Bio Detection.
17. Low threshold, CW, room temperature 1.50 μm GaAS-based lasers.
18. On the temperature sensitivity of 1.5-μm GaInNAsSb lasers.
19. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing.
20. The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs lasers
21. Reduced monomolecular recombination in GaInNAsSb/GaAs lasers at 1.5μm
22. Low threshold, CW, room temperature 1.50 μm GaAS-based lasers
23. Low threshold, CW, room temperature 1.49 μm GaAs-based lasers
24. Realization of small footprint microring reflectors.
25. Edge emitting sensors for accurate quantification of hydrogen composition above 0.5%.
26. Fiber optic hydrogen sensor utilizing facet-etched metal nano-apertures.
27. Palladium-coated photonic crystal vertical cavity lasers for hydrogen sensing applications.
28. Semi-analytical modeling of microring resonators with distributed Bragg reflectors.
29. Low-threshold continuous-wave 1.55-μm GaInNAsSb lasers.
30. Very Low-Threshold 1.55-μm Dilute-Nitride Lasers.
31. Monolithic, GaInNAsSb VCSELs at 1.46μ m on GaAs by MBE.
32. Low-threshold CW GaInNAsSb/GaAs laser at 1.49 l m.
33. Low-threshold CW 1.55-μm GaAs-based lasers.
34. 1.55 μm GalnNAsSb lasers on GaAs.
35. Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5μm.
36. Progress towards high power 1.5 /spl mu/m GaInNAsSb/GaAs lasers for Raman amplifiers.
37. Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 μm.
38. Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 /spl mu/m.
39. The temperature sensitivity of GaAs-based 1.5 /spl mu/m GaInNAsSb lasers.
40. GaInNAsSb/GaNAs VCSELs at 1.46 /spl mu/m.
41. The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs lasers.
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