Monolithic, GaInNAsSb VCSELs at 1.46μ m on GaAs by MBE.

Authors :: Wistey, M.A.
Bank, S.R.
Yuen, H.B.
Goddard, L.L.
Harris, J.S.
Source :: Electronics Letters (Institution of Engineering & Technology); 12/11/2003, Vol. 39 Issue 25, p1822-1823, 2p
Publication Year :: 2003
Abstract: Lasing at 1.460 µm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated. Threshold current was 0.58 A (17 kA/cm²), pulsed with a duty cycle of 0.1%. The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at -10°C. [ABSTRACT FROM AUTHOR]