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We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximity Cu mesoscopic weak links. This specific kind of metallic weak links behaves analogously to genuine superconducting metals in terms of the response to electrostatic gating and provides a good performance in terms of current-modulation visibility. We show that through the application of a static gate voltage we can modify the interferometer current-flux relation in a fashion that seems compatible with the introduction of π-channels within the gated weak link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.

Superconducting interferometers are quantum devices able to transduce a magnetic flux into an electrical output with excellent sensitivity, integrability and power consumption. Yet, their voltage response is intrinsically non-linear, a limitation which is conventionally circumvented through the introduction of compensation inductances or by the construction of complex device arrays. Here we propose an intrinsically-linear flux-to-voltage mesoscopic transducer, called bi-SQUIPT, based on the superconducting quantum interference proximity transistor as fundamental building block. The bi-SQUIPT provides a voltage-noise spectral density as low as $\sim10^{-16}$ V/Hz$^{1/2}$ and, more interestingly, under a proper operation parameter selection, exhibits a spur-free dynamic range as large as $\sim60$ dB, a value on par with that obtained with state-of-the-art SQUID-based linear flux-to-voltage superconducting transducers. Furthermore, thanks to its peculiar measurement configuration, the bi-SQUIPT is tolerant to imperfections and non-idealities in general. For the above reasons, we believe that the bi-SQUIPT could provide a relevant step-beyond in the field of low-dissipation and low-noise current amplification with a special emphasis on applications in cryogenic quantum electronics., 9 pages, 6 figures

In the past decades, bone tissue engineering developed and exploited many typologies of bioreactors, which, besides providing proper culture conditions, aimed at integrating those bio-physical stimulations that cells experience in vivo, to promote osteogenic differentiation. Nevertheless, the highly challenging combination and deployment of many stimulation systems into a single bioreactor led to the generation of several unimodal bioreactors, investigating one or at mostly two of the required biophysical stimuli. These systems miss the physiological mimicry of bone cells environment, and often produced contrasting results, thus making the knowledge of bone mechanotransduction fragmented and often inconsistent. To overcome this issue, in this study we developed a perfusion and electroactive-vibrational reconfigurable stimulation bioreactor to investigate the differentiation of SaOS-2 bone-derived cells, hosting a piezoelectric nanocomposite membrane as cell culture substrate. This multimodal perfusion bioreactor is designed based on a numerical (finite element) model aimed at assessing the possibility to induce membrane nano-scaled vibrations (with ~12 nm amplitude at a frequency of 939 kHz) during perfusion (featuring 1.46 dyn cm-2 wall shear stress), large enough for inducing a physiologically-relevant electric output (in the order of 10 mV on average) on the membrane surface. This study explored the effects of different stimuli individually, enabling to switch on one stimulation at a time, and then to combine them to induce a faster bone matrix deposition rate. Biological results demonstrate that the multimodal configuration is the most effective in inducing SaOS-2 cell differentiation, leading to 20-fold higher collagen deposition compared to static cultures, and to 1.6- and 1.2-fold higher deposition than the perfused- or vibrated-only cultures. These promising results can provide tissue engineering scientists with a comprehensive and biomimetic stimulation platform for a better understanding of mechanotransduction phenomena beyond cells differentiation. © 2022 The Authors. Biotechnology and Bioengineering published by Wiley Periodicals LLC.

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to similar to 45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results which provide information regarding a possible thermal origin of the effect: in the first place, we review experiments performed on high critical temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools such as, e. g., a half-wave rectifier. In a second part, we discuss the origin of the gating effect by showing the gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate by means of finite element simulations and compare the results with experimental data. Finally, the presented data provide a strong indication regarding the unlikelihood of thermal origin of the gating effect.

Piezoelectric films of poly(vinylidenedifluoride-trifluoroethylene) (P(VDF-TrFE)) and of P(VDF-TrFE)/boron nitride nanotubes (BNNTs) were prepared by cast-annealing and used for SaOS-2 osteoblast-like cell culture. Films were characterized in terms of surface and bulk features, and composite films demonstrated enhanced piezoresponse compared to plain polymeric films (d 31 increased by ~80%). Osteogenic differentiation was evaluated in terms of calcium deposition, collagen I secretion, and transcriptional levels of marker genes (Alpl, Col1a1, Ibsp, and Sparc) in cells either exposed or not to ultrasounds (US); finally, a numerical model suggested that the induced voltage (~20-60 mV) is suitable for cell stimulation. Although preliminary, our results are extremely promising and encourage the use of piezoelectric P(VDF-TrFE)/BNNT films in bone tissue regeneration. © 2017 Elsevier Inc.

In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications, these findings raised fundamental questions on the origin of these phenomena. To date, two complementary hypotheses are under debate: an electrostatically-triggered orbital polarization at the superconductor surface, or the injection of highly-energetic quasiparticles extracted from the gate. Here, we tackle this crucial issue via a fully suspended gate-controlled Ti nano-transistor. Our geometry allows to eliminate any direct injection of quasiparticles through the substrate thereby making cold electron field emission through the vacuum the only possible charge transport mechanism. With the aid of a fully numerical 3D model in combination with the observed phenomenology and thermal considerations we can rule out, with any realistic likelihood, the occurrence of cold electron field emission. Excluding these two trivial phenomena is pivotal in light of understanding the microscopic nature of gating effect in superconducting nanostructures, which represents an unsolved puzzle in contemporary superconductivity. Yet, from the technological point of view, our suspended fabrication technique provides the enabling technology to implement a variety of applications and fundamental studies combining, for instance, superconductivity with nano-mechanics., 7 pages, 4 color figures

Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features have been explained by simple charge accumulation/depletion. In 2018, electric field control of supercurrent in conventional metallic superconductors has been demonstrated in a range of electric fields where the induced variation of charge carrier concentration in metals is negligibly small. In fact, no changes of normal state resistance and superconducting critical temperature were reported. Here, we review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this unexplained phenomenon. We will start by presenting the seminal results on superconducting BCS wires and nano-constriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum and vanadium. Then, we show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors suggesting that the presence of induced superconducting correlations are enough to see this unconventional field-effect. Later, we present the control of the interference pattern in a superconducting quantum interference device indicating the coupling of the electric field with thesuperconducting phase. Among the possible applications of the presented phenomenology, we conclude this review by proposing some devices that may represent a breakthrough in superconducting quantum and classical computation., Comment: 19 pages, 14 figures

We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$ down to 50 mK in the presence of both electric and magnetic field. The ability of a static electric field -applied by mean of a lateral gate electrode- to suppress the critical current $I_s$ in a proximity-induced superconductor is proven for both positive and negative gate voltage values. $I_s$ suppression reached typically about one third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to \textit{synthetic} proximity-induced superconductors., 11 pages, 5 color figures

Gate-tunable Josephson junctions (JJs) are the backbone of superconducting classical and quantum computation. Typically, these systems exploit low charge concentration materials, and present technological diffculties limiting their scalability. Surprisingly, electric field modulation of supercurrent in metallic wires and JJs has been recently demonstrated. Here, we report the realization of titanium-based monolithic interferometers which allow tuning both JJs independently via voltage bias applied to capacitively-coupled electrodes. Our experiments demonstrate full control of the amplitude of the switching current (IS) and of the superconducting phase across the single JJ in a wide range of temperatures. Astoundingly, by gate-biasing a single junction the maximum achievable total IS suppresses down to values much lower than the critical current of a single JJ. A theoretical model including gate-induced phase fluctuations on a single junction accounts for our experimental findings. This class of quantum interferometers could represent a breakthrough for several applications such as digital electronics, quantum computing, sensitive magnetometry and single-photon detection., Comment: 9 pages, 4 figures

Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting properties. Despite field-effect is believed to be unaffective for superconducting metals, recent experiments showed electric field dependent modulation of the critical current (IC) in a fully metallic transistor. Yet, the grounding mechanism of this phenomenon is not completely understood. Here, we show the experimental realization of Ti-based Dayem bridge field-effect transistors (DB-FETs) able to control IC of the superconducting channel. Our easy fabrication process DB-FETs show symmetric full suppression of IC for an applied critical gate voltage as low as VCG~+-8V at temperatures reaching about the 85% of the record critical temperature TC~550mK for titanium. The gate-independent TC and normal state resistance (RN) coupled with the increase of resistance in the supercoducting state (RS) for gate voltages close to the critical value (VCG) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (gMAXm~15uA/V at VG~+-6.5V) and variations of Josephson kinetic inductance (LK) with VG of two orders of magnitude. Therefore, the DB-FET appears as an ideal candidate for the realization of superconducting electronics, superconducting qubits, tunable interferometers as well as photon detectors., 9 pages, 4 figures

In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal state resistance and the critical temperature. These results still miss a microscopic explanation. In this article, we show a complete set of gating experiments on Ti-based superconducting Dayem bridges and a suggested classical thermodynamic model which seems to account for several of our experimental findings. In particular, zero-bias resistance and critical current IC measurements highlight the following: the suppression of IC with both polarities of gate voltage, the surface nature of the effect, the critical temperature independence from the electric field and the gate-induced growth of a sub-gap dissipative component. In addition, the temperature dependence of the Josephson critical current seems to show the transition from the ballistic Kulik-Omelyanchuck behavior to the Ambegaokar-Baratoff tunnel-like characteristic by increasing the electric field. Furthermore, the IC suppression persists in the presence of sizeable perpendicular-to-plane magnetic fields. We propose a classical thermodynamic model able to describe some of the experimental observations of the present and previous works. Above all, the model grabs the bipolar electric field induced suppression of IC and the emergence of a sub-gap dissipative component near full suppression of the supercurrent. Finally, applications employing the discussed effect are proposed., Comment: 13 pages, 7 figures

A scalable surface-acoustic-wave- (SAW-) based cantilevered device for portable bio-chemical sensing applications is presented. Even in the current, proof-of-principle implementation this architecture is shown to outperform commercial quartz-crystal microbalances in terms of sensitivity. Adhesion of analytes on a functionalized surface of the cantilever shifts the resonant frequency of a SAW-generating transducer due to the stress-induced variation of the speed of surface acoustic modes. We discuss the relevance of this approach for diagnostics applications based on miniaturized devices.

Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building block for advanced optoelectronic architectures.

By exploiting the resonant coupling between a travelling wave and the stationary modes of a cavity, we present the first scheme for integrated automatic interaction-free surface acoustic wave routing of fluids. Our scheme opens the way to the implementation of logic gates based on instantaneous liquid distribution.

We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]

We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pick up electrons from a current flowing through the n-i-n junction and steer them toward the output contact. Acoustic charge transport was studied as a function of the injector current and bias, the SAW power and at various temperatures. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage or current sources, thus allowing to sample and process voltage and current signals as well., Comment: 9 pages, 3 figures. Submitted to Applied Physics Letters

We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g(2)(0) = 0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the gigahertz range, we believe our devices are an appealing substitute for highly attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems.

A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.

A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretically predicted that the combination of two such spin-split superconductors with independently tunable magnetizations may be used as an ideal absolute spin-valve. Here, we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized current through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, a logical element for a memory cell in cryogenics, superconductor-based computers, and superconducting spintronics in general., Partial financial support from the European Union’s Seventh Framework Programme (FP7/2007-2013) ERC Grant 615187-COMANCHE and Horizon research and innovation programme under grant agreement No. 800923 (SUPERTED) are acknowledged. The work of G.D.S. is funded by Tuscany Region under the FAR-FAS 2014 project SCIADRO. J.S.M. research at MIT is supported by NSF Grant DMR 1700137 and ONR Grant N00014-16-1- 2657. The work of F.S.B. was supported by the Spanish Ministerio de Economía, Industria y Competitividad (MINEICO) under Projects No. FIS2014-55987-P and FIS2017-82804-P.