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Lasing in planar semiconductor diodes
- Source :
- Applied physics letters 99 (2011): 261110. doi:10.1063/1.3672438, info:cnr-pdr/source/autori:De Simoni, Giorgio; Mahler, Lukas; Piazza, Vincenzo; Tredicucci, Alessandro; Nicoll, Christine A.; Beere, Harvey E.; Ritchie, David A.; Beltram, Fabio/titolo:Lasing in planar semiconductor diodes/doi:10.1063%2F1.3672438/rivista:Applied physics letters/anno:2011/pagina_da:261110/pagina_a:/intervallo_pagine:261110/volume:99
- Publication Year :
- 2011
-
Abstract
- We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]
- Subjects :
- Physics
Fabrication
Condensed Matter - Mesoscale and Nanoscale Physics
Physics and Astronomy (miscellaneous)
Laser diode
business.industry
FOS: Physical sciences
Laser
law.invention
Planar
Semiconductor
law
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
business
Lithography
Lasing threshold
Diode
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Applied physics letters 99 (2011): 261110. doi:10.1063/1.3672438, info:cnr-pdr/source/autori:De Simoni, Giorgio; Mahler, Lukas; Piazza, Vincenzo; Tredicucci, Alessandro; Nicoll, Christine A.; Beere, Harvey E.; Ritchie, David A.; Beltram, Fabio/titolo:Lasing in planar semiconductor diodes/doi:10.1063%2F1.3672438/rivista:Applied physics letters/anno:2011/pagina_da:261110/pagina_a:/intervallo_pagine:261110/volume:99
- Accession number :
- edsair.doi.dedup.....d7d2d748ce8105836095d561ea5abb33
- Full Text :
- https://doi.org/10.1063/1.3672438