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1. Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films.

Author

Gerstar, E.G. and McKenzie, D.R.

Subjects
*ELECTRICITY experiments, *DOPED semiconductors, *AMORPHOUS semiconductors, *ELECTRIC properties of thin films, *THERMAL properties, *ELECTRONICS
Abstract

Studies the reversible nonvolatile effects of electrical measurements of nitrogen doped tetrahedral amorphous carbon thin films. Methodology used in the experiment; Results and discussion; Conclusions.

Published
1998

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