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Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films.

Authors :
Gerstar, E.G.
McKenzie, D.R.
Source :
Journal of Applied Physics. 11/15/1998, Vol. 84 Issue 10, p5647. 5p.
Publication Year :
1998

Abstract

Studies the reversible nonvolatile effects of electrical measurements of nitrogen doped tetrahedral amorphous carbon thin films. Methodology used in the experiment; Results and discussion; Conclusions.

Details

Language :
English
ISSN :
00218979
Volume :
84
Issue :
10
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
1315352