Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films.

Authors :: Gerstar, E.G.
McKenzie, D.R.
Source :: Journal of Applied Physics. 11/15/1998, Vol. 84 Issue 10, p5647. 5p.
Publication Year :: 1998
Abstract: Studies the reversible nonvolatile effects of electrical measurements of nitrogen doped tetrahedral amorphous carbon thin films. Methodology used in the experiment; Results and discussion; Conclusions.

Subjects :: *ELECTRICITY experiments
*DOPED semiconductors
*AMORPHOUS semiconductors
*ELECTRIC properties of thin films
*THERMAL properties
*ELECTRONICS

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