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34 results on '"Gerbedoen, J-C"'

1. Ultra-high frequency vortex-based tweezers for microparticles manipulation with high spatial selectivity and nanoNewton forces

Author

Sahely, Roudy Al, Gerbedoen, J-C, Smagin, Nikolay, Chutani, Ravinder, Matar, Olivier Bou, and Baudoin, Michael

Subjects
Physics - Classical Physics
Abstract

Acoustical tweezers based on focused acoustical vortices open some tremendous perspectives for the in vitro and in vivo remote manipulation of millimetric down to micrometric objects, with combined selectivity and applied forces out of reach with any other contactless manipulation technique. Yet, the synthesis of ultra-high frequency acoustical vortices to manipulate precisely micrometric objects remains a major challenge. In this paper, the synthesis of a 250 MHz acoustical vortex is achieved with an active holographic source based on spiraling interdigitated transducers. It is shown that this ultra-high frequency vortex enables to trap and position individual particles in a standard microscopy environment with high spatial selectivity and nanoNewton forces. This work opens perspectives to explore acoustic force spectroscopy in some force ranges that were not accessible before.

Published
2022

6. Ultra-high frequency vortex-based tweezers for microparticles manipulation with high spatial selectivity and nanoNewton forces

Author

Al Sahely, Roudy, Gerbedoen, J-C, Smagin, Nikolay, Chutani, Ravinder, Bou Matar, Olivier, Baudoin, Michael, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Classical Physics (physics.class-ph), FOS: Physical sciences, Physics - Classical Physics, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph]
Abstract

Acoustical tweezers based on focused acoustical vortices open some tremendous perspectives for the in vitro and in vivo remote manipulation of millimetric down to micrometric objects, with com- bined selectivity and applied forces out of reach with any other contactless manipulation technique. Yet, the synthesis of ultra-high frequency acoustical vortices to manipulate precisely micrometric objects remains a major challenge. In this paper, the synthesis of a 250 MHz acoustical vortex is achieved with an active holographic source based on spiraling interdigitated transducers. It is shown that this ultra-high frequency vortex enables to trap and position individual particles in a standard microscopy environment with high spatial selectivity and nanoNewton forces. This work opens perspectives to explore acoustic force spectroscopy in some force ranges that were not accessible before.

Published
2022
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11. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures.

Author

Chicot, G., Fiori, A., Volpe, P. N., Tran Thi, T. N., Gerbedoen, J. C., Bousquet, J., Alegre, M. P., Piñero, J. C., Araújo, D., Jomard, F., Soltani, A., De Jaeger, J. C., Morse, J., Härtwig, J., Tranchant, N., Mer-Calfati, C., Arnault, J. C., Delahaye, J., Grenet, T., and Eon, D.

Subjects
NANOMETROLOGY, DOPING agents (Chemistry), DIAMOND mining, METAL inclusions, ELLIPSOMETRY
Abstract

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm. [ABSTRACT FROM AUTHOR]

Published
2014
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12. Finite element analysis and experimental study of surface acoustic wave propagation through two-dimensional pillar-based surface phononic crystal.

Author

Yankin, S., Talbi, A., Du, Y., Gerbedoen, J.-C., Preobrazhensky, V., Pernod, P., and Bou Matar, O.

Subjects
SOUND waves, FINITE element method, PHONONIC crystals, ENERGY bands, PIEZOELECTRIC detectors, INTERDIGITAL transducers
Abstract

We study both theoretically and experimentally the interaction of surface elastic waves with 2D surface phononic crystal (PnC) on a piezoelectric substrate. A rigorous analysis based on 3D finite element method is conducted to calculate the band structure of the PnC and to analyze the transmission spectrum (module and phase). Interdigital transducers (IDTs) are considered for electrical excitation and detection, and absorbing boundary conditions are used to suppress wave's reflection from the edges. The PnCs are composed of an array of 20 Nickel cylindrical pillars arranged in a square lattice symmetry, and deposited on a LiNbO3 substrate (128°Y cut-X propagating) between two dispersive IDTs. We investigate by means of band diagrams and transmission spectrum the opening band-gaps originating from pillars resonant modes and from Bragg band-gap. The physical parameters that influence and determine their appearance are also discussed. Experimental validation is achieved through electrical measurement of the transmission characteristics, including amplitude and phase. [ABSTRACT FROM AUTHOR]

Published
2014
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13. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range.

Author

Soltani, A., Stolz, A., Charrier, J., Mattalah, M., Gerbedoen, J.-C., Barkad, H. A., Mortet, V., Rousseau, M., Bourzgui, N., BenMoussa, A., and De Jaeger, J.-C.

Subjects
DISPERSION relations, EPITAXIAL layers, INFRARED radiation, X-ray diffraction, ATOMIC force microscopy, ALUMINUM nitride films, THIN films
Abstract

Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. The refractive index and the thermo-optic coefficients are determined by m-lines spectroscopy using the classical prism coupling technique. The optical losses of this planar waveguide are also measured in the spectral range of 450-1553 nm. The lower value of optical losses is equal to 0.7 dB/cm at 1553 nm. The optical losses due to the surface scattering are simulated showing that the contribution is the most significant at near infrared wavelength range, whereas the optical losses are due to volume scattering and material absorption in the visible range. The good physical properties and the low optical losses obtained from this planar waveguide are encouraging to achieve a wide bandgap optical guiding platform from these aluminum nitride thin films. [ABSTRACT FROM AUTHOR]

Published
2014
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14. Diamond Coated LW-SAW Sensors-Study of Diamond Thickness Effect

Author

Drbohlavová, L., primary, Gerbedoen, J. C., additional, Taylor, A., additional, Talbi, A., additional, Fekete, L., additional, Ashcheulov, P., additional, Soltani, A., additional, Bovtun, V., additional, Kempa, M., additional, Bartoň, J., additional, Cígler, P., additional, and Mortet, V., additional

Published
2017
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16. Highly oriented (00.2) aluminum nitride close to single crystal using (111) titanium nitride buffer layer for microwave high power electro-acoustic devices

Author

Soltani, A., Abdelkrim Talbi, Mortet, V., Bassam, A., Gerbedoen, J. C., Patriarche, G., Jean-Claude de Jaeger, Philippe PERNOD, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Published
2013

17. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

Author

Barkad, H A, Soltani, A, Mattalah, M, Gerbedoen, J-C, Rousseau, M, De Jaeger, J-C, BenMoussa, A, Mortet, V, Haenen, K, Benbakhti, B, DEEE, 4, Building, Rankine, Oakfield Avenue, Moreau, M, Dupuis, R, Ougazzaden, A, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Royal Observatory of Belgium [Brussels] (ROB), Institute for Materials Research, IMEC vzw, Division IMOMEC, University of Glasgow, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Department of Electrical and Electronic Engineering [London] (DEEE), Imperial College London, Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 (LASIRE), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta], and Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Subjects
Materials science, Acoustics and Ultrasonics, Orders of magnitude (temperature), Schottky barrier, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Responsivity, Optics, law, 0103 physical sciences, Photodiodes, AlN, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Photodiode, deep UV, chemistry, Sapphire, 0210 nano-technology, business, Tin, Simulation, DC bias, Dark current
Abstract

Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal–semiconductor–metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at −100 V dc bias for large device area as high as 3.1 mm2. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (∼6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL® software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

Published
2010
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21. Diamond and Cubic Boron Nitride: Properties, Growth and Applications

Author

Soltani, A., Talbi, A., Mortet, V., BenMoussa, A., Zhang, W. J., Gerbedoen, J-C, De Jaeger, J-C, Gokarna, A., Haenen, K., and Wagner, P.

Subjects
diamond, cBN, AlN, sputtering, CVD, doping, photodetector, RF resonator, actuator, sensor, Physics, Applied, Physics, Condensed Matter
Abstract

Since their first synthesis, cubic boron nitride (c-BN) and diamond thin films have triggered a vivid interest in these wide band gap materials for many different applications. Because of superior properties, c-BN and diamond can be applied in optic, electronic and acoustic for high performances devices. In this discussion, we first describe briefly the properties of c-BN and diamond and we review both the growth techniques and the progresses achieved in the synthesis of c-BN and diamond, and in a second part, characteristics of new c-BN and diamond UV detectors for solar observation are reported. These photo-detectors present extremely low dark current, high breakdown voltage, high responsivity and stability under UV irradiation. Finally, diamond based acoustic devices and sensors are presented. High frequency acoustic wave devices can be design for high frequency filtering or sensing applications. Diamond/AlN micro-cantilevers are excellent platform for sensor applications.

Published
2010

29. Diamond and Cubic Boron Nitride: Properties, Growth and Applications

Author

Soltani, A., primary, Talbi, A., additional, Mortet, V., additional, BenMoussa, A., additional, Zhang, W. J., additional, Gerbedoen, J.-C., additional, De Jaeger, J.-C., additional, Gokarna, A., additional, Haenen, K., additional, Wagner, P., additional, Ferro, Gabriel, additional, and Siffert, Paul, additional

Published
2010
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