Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate.

Details

Language :

English

ISSN :

18626351

Volume :

9

Issue :

3/4

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

73760499

Full Text :

https://doi.org/10.1002/pssc.201100211