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4 results on '"Gate buffer layer"'

1. N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Author

Noda, Kei, Tanida, Shinji, Kawabata, Hiroshi, and Matsushige, Kazumi

Subjects
*THIN film transistors, *PENTACENE, *POLYMETHYLMETHACRYLATE, *ELECTRODES, *GOLD, *SILICA, *SURFACE chemistry
Abstract

Abstract: N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source–drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3×10−2 cm2/(Vs) and 0.21cm2/(Vs), respectively, in a vacuum of 0.1Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages. [Copyright &y& Elsevier]

Published
2010
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2. N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Author

Tanida, Shinji, Noda, Kei, Kawabata, Hiroshi, and Matsushige, Kazumi

Subjects
*THIN film transistors, *NAPHTHALENE, *CARBOXYLIC acids, *ANHYDRIDES, *POLYMETHYLMETHACRYLATE, *SILICA, *SURFACE chemistry
Abstract

Abstract: N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface. [Copyright &y& Elsevier]

Published
2009
Full Text
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3. N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Author

Kazumi Matsushige, Kei Noda, Hiroshi Kawabata, and Shinji Tanida

Subjects
Electron mobility, Materials science, Pentacene, Analytical chemistry, Ambipolar transport, Electron trap, law.invention, chemistry.chemical_compound, law, Materials Chemistry, Gate buffer layer, Work function, chemistry.chemical_classification, business.industry, Mechanical Engineering, Transistor, Metals and Alloys, Organic thin-film transistor, Polymer, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, Mechanics of Materials, Thin-film transistor, Electrode, Optoelectronics, business, Layer (electronics)
Abstract

N -channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source–drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO 2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10 −2 cm 2 /(V s) and 0.21 cm 2 /(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO 2 surfaces, and enhance the electron accumulation by applied gate voltages.

Published
2010

4. N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Author

Kazumi Matsushige, Shinji Tanida, Kei Noda, and Hiroshi Kawabata

Subjects
Electron mobility, Materials science, n-channel operation, Analytical chemistry, law.invention, chemistry.chemical_compound, Adsorption, law, Materials Chemistry, Air stability, Gate buffer layer, Methyl methacrylate, chemistry.chemical_classification, business.industry, Transistor, Metals and Alloys, Organic thin-film transistor, Surfaces and Interfaces, Polymer, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Organic semiconductor, chemistry, Thin-film transistor, Optoelectronics, Electron traps, business, Layer (electronics)
Abstract

N -channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO 2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO 2 surface. In addition, air stability for n -channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO 2 surface.

Published
2009

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