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N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer
- Source :
- Synthetic Metals. 160:83-87
- Publication Year :
- 2010
- Publisher :
- Elsevier BV, 2010.
-
Abstract
- N -channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source–drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO 2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10 −2 cm 2 /(V s) and 0.21 cm 2 /(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO 2 surfaces, and enhance the electron accumulation by applied gate voltages.
- Subjects :
- Electron mobility
Materials science
Pentacene
Analytical chemistry
Ambipolar transport
Electron trap
law.invention
chemistry.chemical_compound
law
Materials Chemistry
Gate buffer layer
Work function
chemistry.chemical_classification
business.industry
Mechanical Engineering
Transistor
Metals and Alloys
Organic thin-film transistor
Polymer
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
chemistry
Mechanics of Materials
Thin-film transistor
Electrode
Optoelectronics
business
Layer (electronics)
Subjects
Details
- ISSN :
- 03796779
- Volume :
- 160
- Database :
- OpenAIRE
- Journal :
- Synthetic Metals
- Accession number :
- edsair.doi.dedup.....d5e785652a48ad8cdf6a72e90741bc9a