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Ab initio description of point defects in semiconductors, characterized by in-gap states of significant multideterminant character, presents a longstanding theoretical challenge for density functional theory (DFT) methods. In this study, we devise a wavefunction theory (WFT) based ab initio methodology as a competing alternative approach. Specifically, we apply perturbation theory (NEVPT2 level) on top of a defect-localized many-body wavefunction (CASSCF level), which provides a balanced description of dynamic and static correlation effects, respectively. This quantum chemical methodology, exemplified for the NV$^-$ center in diamond in this study, is not only used for the calculation of energies and properties, but also for geometry optimization, performed for each electronic state individually. By relaxing cluster models of increasing size and investigating convergence behavior, we quantitatively reproduce (i) the full energy spectrum of NV$^-$ including the recently characterized high-energy states, (ii) the effect of Jahn-Teller distortion on measurable properties, (iii) the fine structure of ground and excited states, (iv) the pressure dependence of zero-phonon lines. Our findings showcase that applying conventional wave-function-based quantum chemistry on carefully crafted clusters can be a robust routine tool for discussing defect-state energetics., Comment: significantly updated content: main document (45 pages, 7 figs, 2 tables) + supplementary info (13 pages, 4 figs, 10 tables) + geometries.pdf

Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an intriguing class of color centers. We demonstrate that both carbon contamination and strain can stabilize Stone-Wales configurations and give rise to emitters with desirable optical properties in the visible spectral range. Inspired by these results, we further demonstrate that carbon atoms at grain boundaries can resolve energetic B-B and N-N bonds leading to highly favorable atomic structures that may facilitate the accumulation of carbon contamination at the boundaries. Similarly to contaminated Stone-Wales defects, carbon-doped grain boundaries can also give rise to color centers emitting in the visible spectral range with short radiative lifetime and high Debye-Waller factors. Our discoveries shed light on an exciting class of defects and pave the way toward the identification of color centers and single photon emitters in hBN.

Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters, both as singles and in ensembles, with three discrete polarization axes indicative of a C2v symmetry defect. Our results constitute an important milestone towards the implementation of hBN quantum emitters in integrated quantum photonics., Comment: 10 pages, 4 figures

Color centers in hexagonal boron nitride (hBN) have attracted considerable attention due to their remarkable optical properties enabling robust room temperature photonics and quantum optics applications in the visible spectral range. On the other hand, identification of the microscopic origin of color centers in hBN has turned out to be a great challenge that hinders in-depth theoretical characterization, on-demand fabrication, and development of integrated photonic devices. This is also true for the blue emitter, which is an irradiation damage in hBN emitting at 436 nm wavelengths with desirable properties. Here, we propose the negatively charged nitrogen split interstitial defect in hBN as a plausible microscopic model for the blue emitter. To this end, we carry out a comprehensive first principles theoretical study of the nitrogen interstitial. We carefully analyze the accuracy of first principles methods and show that the commonly used HSE hybrid exchange-correlation functional fails to describe the electronic structure of this defect. Using the generalized Koopman's theorem, we fine tune the functional and obtain a zero-phonon photoluminescence (ZPL) energy in the blue spectral range. We show that the defect exhibits high emission rate in the ZPL line and features a characteristic phonon side band that resembles the blue emitter's spectrum. Furthermore, we study the electric field dependence of the ZPL and numerically show that the defect exhibits a quadratic Stark shift for perpendicular to plane electric fields, making the emitter insensitive to electric field fluctuations in first order. Our work emphasize the need for assessing the accuracy of common first principles methods in hBN and exemplifies a workaround methodology. Furthermore, our work is a step towards understanding the structure of the blue emitter and utilizing it in photonics applications., Comment: 33 pages, 10 figures, 3 tables

Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the forefront of high spatial resolution and low dimensional sensing. On the other hand, vacancies' reactive nature and instability at the surface limit further developments. Here, we study the symmetric carbon tetramers in hBN and propose them as a chemically stable spin qubit for sensing in low dimensions. We utilize periodic-DFT and quantum chemistry approaches to reliably and accurately predict the electronic, optical, and spin properties of the studied defect. We show that the nitrogen centered symmetric carbon tetramer gives rise to spin state dependent optical signals with strain sensitive intersystem crossing rates. Furthermore, the weak hyperfine coupling of the defect to their spin environments results in a reduced electron spin resonance linewidth that may enhance sensitivity., Comment: main document (29 pages, 5 figures, 2 tables) + supplementary material (14 pages, 9 figures, 7 tables)