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Your search keyword '"Ganiere, J.D."' showing total 25 results
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25 results on '"Ganiere, J.D."'

1. Cathodoluminescence of epitaxial GaN laterally overgrown on (001) sapphire substrate. Time evolution with low energy electron beam

Author

Dassonneville, S., Amokrane, A., Sieber, B., Farvacque, J.L., Beaumont, B., Gibart, P., Ganiere, J.D., and Leifer, K.

Subjects
Electron beams -- Usage, Gallium nitrate -- Research, Physics
Abstract

Time evolution with low energy electron beam was used to study cathodoluminescence of epitaxial GaN laterally overgrown on (001) sapphire substrates.

Published
2001

2. Effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multiple-quantum-well structures

Author

Ky, Nguyen Hong, Reinhart, F.K., Ganiere, J.D., Deveaud, B., and Blanchard, B.

Subjects
Gallium arsenide semiconductors -- Research, Quantum wells -- Research, Semiconductor doping -- Research, Zinc -- Research, Semiconductors -- Diffusion, Physics
Abstract

Research was conducted to examine the effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures using secondary ion-mass spectrometry and photoluminescence calculations. Results derived by secondary-ion-mass spectrometry and photoluminescence calculations reveal that the Zn diffusion induces an enhancement of Be out-diffusion and the disordering of all structures. A model is proposed to explain the effects of both n- and p-type background doping on the impurity-induced disordering process.

Published
1999

3. Spatial variations of the tensile stress relaxation

Author

Cleton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R.A., Bonard, J.M., Ganiere, J.D., and Ambri, M.

Subjects
Stress relaxation (Materials) -- Observations, Thin films, Multilayered -- Research, Gallium -- Usage, Indium -- Usage, Phosphorus -- Usage, Transmission electron microscopes -- Usage, Cathodoluminescence -- Observations, Physics
Published
1996

6. Effects of post-diffusion annealing on Zn-diffused GaAs:Si

Author

Nguyen Hong Ky, Ganiere, J.D., Reinhart, F.K., Blanchard, B., and Pfister, J.C.

Subjects
Annealing -- Observations, Gallium arsenide semiconductors -- Research, Diffusion -- Analysis, Zinc -- Usage, Physics
Abstract

Si-doped GaAs are studied to determine the distribution of Zn by post-diffusion annealing under different temperature and pressure conditions. The Zn diffusion process is revealed by the comparison of secondary ion mass spectroscopic (SIMS) data and photoluminescence (PL) spectra. The SIMS and PL spectra are obtained at various etching depths. A single Zn ion concentration profile with supersaturation of the gallium critical voltage is observed after the annealing.

Published
1993

7. Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/AlxGa1-xAs (x=0.1-1) multiple-quantum-well structures

Author

Ky, Nguyen Hong, Ganiere, J.D., Gailhanou, M., Blanchard, B., Pavesi, L., Burri, G., Araujo, D., and Reinhart, F.K.

Subjects
Quantum wells -- Research, Physics
Abstract

The impurity-induced disordering mechanism in GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thickness but varying Al contents in the barrier was investigated using transmission electron microscopy, scanning electron microscopy and secondary ion mass spectroscopy. The results showed that all types of disordered regions were always located behind the Zn diffusion front, indicating a self-interstitial mechanism for Zn diffusion-induced disordering.

Published
1993

8. Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in the related superlattice disordering

Author

Pavesi, L., Nguyen Hong Ky, Ganiere, J.D., Reinhart, F.K., Baba-Ali, N., Tuck, B., Henini, M., and Harrison, I.

Subjects
Gallium arsenide semiconductors -- Research, Superlattices as materials -- Research, Semiconductors -- Diffusion, Semiconductor doping -- Research, Secondary ion mass spectrometry -- Research, Physics
Abstract

The mechanisms of gallium arsenide (GaAs) and aluminum gallium arsenide (Al0.3Ga0.7As) semiconductor doping via silicon (Si) diffusion and the layer disordering induced by the process was examined via photoluminescence (PL). The GaAs and Al0.3Ga0.7As layers were grown via a molecular beam epitaxy method while the dopant was diffused into the semiconductor from a Si-doped layer grown inside it. An overview of previous point defects analyses made on the samples was provided. Results of PL, secondary-ion-mass spectroscopy and transmission electron microscopy analyses of the samples are presented. The diffusion process and depth profiling studies of PL results are also given.

Published
1992

9. Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures: the effect of a pulse metalorganic flow

Author

Sacilotti, M., Horiuchi, L., Decobert, J., Brasil, M.J., Cardosos, L.P., Ossart, P., and Ganiere, J.D.

Subjects
Gallium compounds -- Research, Indium -- Research, Epitaxy -- Research, Physics
Abstract

The metalorganic vapor phase epitaxy system (MOVPE) was used to grow gallium aluminum arsenate(GaAlAs)/gallium arsenide(GaAs) and gallium indium arsenate(GalInAs)/indium phosphite(InP) in order to study their layer heterostructures. Layers grown via high vapor pressure metalorganic sources exhibited fluctuations in the ternary alloy composition attributed to the pulse character of the high vapor pressure metalorganic flow. The study revealed information on GaAlAs/GaAs and GaInAs/InP characteristics such as photoluminiscence, chemical composition and x-ray diffraction.

Published
1992

11. One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells

Author

Dussaigne, A., Corfdir, P., Levrat, J., Zhu, T., Martin, D., Lefebvre, P., Ganiere, J.D., Butte, R., Deveaud-Pledran, B., Grandjean, N., Stadelmann, P., Dussaigne, A., Corfdir, P., Levrat, J., Zhu, T., Martin, D., Lefebvre, P., Ganiere, J.D., Butte, R., Deveaud-Pledran, B., Grandjean, N., and Stadelmann, P.

Abstract

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given Al content, the narrower the QW emission line. In structures with an Al content set to 5 or 10%, we also observe emission from excitons bound to the intersection of I1-type basal plane stacking faults (BSFs) with the QW. Similarly to what is seen in bulk material, the temperature dependence of BSF-bound QW exciton luminescence reveals intra-BSF localization. A qualitative model evidences the large spatial extension of the wavefunction of these BSF-bound QW excitons, making them extremely sensitive to potential fluctuations located in and away from BSF. Finally, polarization-dependent measurements show a strong emission anisotropy for BSF-bound QW excitons, which is related to their one-dimensional character and that confirms that the intersection between a BSF and a GaN/(Al,Ga)N QW can be described as a quantum wire.

Published
2011

12. Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

Author

Markus, A., Fiore, A., Ganiere, J.D., Oesterle, U., Chen, J.X., Deveaud, B., Ilegems, M., Riechert, H., Markus, A., Fiore, A., Ganiere, J.D., Oesterle, U., Chen, J.X., Deveaud, B., Ilegems, M., and Riechert, H.

Abstract

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)]

Published
2002

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