93 results on '"Gagliano L."'
Search Results
2. Strain engineering in Ge/GeSn core/shell nanowires
- Author
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Assali, S, Albani, M, Bergamaschini, R, Verheijen, M, Li, A, Kolling, S, Gagliano, L, Bakkers, E, Miglio, L, Assali S., Albani M., Bergamaschini R., Verheijen M. A., Li A., Kolling S., Gagliano L., Bakkers E. P. A. M., Miglio L., Assali, S, Albani, M, Bergamaschini, R, Verheijen, M, Li, A, Kolling, S, Gagliano, L, Bakkers, E, Miglio, L, Assali S., Albani M., Bergamaschini R., Verheijen M. A., Li A., Kolling S., Gagliano L., Bakkers E. P. A. M., and Miglio L.
- Abstract
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry by controlling the Ge core diameter and correlating the results with theoretical strain calculations. Incorporation of the Sn content in the 10-20 at. % range is achieved with Ge core diameters ranging from 50 nm to 100 nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multifaceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.
- Published
- 2019
3. Unsupervised Clustering of HRV Features Reveals Preictal Changes in Human Epilepsy
- Author
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Gagliano, L., primary, Assi, E. Bou, additional, Toffa, D. H., additional, Nguyen, D. K., additional, and Sawan, M., additional
- Published
- 2020
- Full Text
- View/download PDF
4. Strain engineering in Ge/GeSn core/shell nanowires
- Author
-
Assali, S., Albani, M., Bergamaschini, R., Verheijen, M.A., Li, A., Kölling, S., Gagliano, L., Bakkers, E.P.A.M., Miglio, L., Assali, S., Albani, M., Bergamaschini, R., Verheijen, M.A., Li, A., Kölling, S., Gagliano, L., Bakkers, E.P.A.M., and Miglio, L.
- Abstract
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry by controlling the Ge core diameter and correlating the results with theoretical strain calculations. Incorporation of the Sn content in the 10-20 at. % range is achieved with Ge core diameters ranging from 50 nm to 100 nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multifaceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.
- Published
- 2019
5. Strain relaxation in semiconductor core/shell nanowires
- Author
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Albani, M, Bergamaschini, R, Gagliano, L, Assali, S, Verheijen M, Bakkers, E, Miglio, L., Albani, M, Bergamaschini, R, Gagliano, L, Assali, S, Verheijen, M, Bakkers, E, and Miglio, L
- Subjects
nanowire, core/shell, GeSn, bending, elasticity, strain, InGaP - Published
- 2017
6. Strain and strain-driven effects in coaxial nanowires
- Author
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MIGLIO, LEONIDA, ALBANI, MARCO GIOCONDO, BERGAMASCHINI, ROBERTO, Gagliano, L, Assali, S, Verheijen, M, Bakkers, E., Miglio, L, Albani, M, Bergamaschini, R, Gagliano, L, Assali, S, Verheijen, M, and Bakkers, E
- Subjects
nanowire ,Strain - Published
- 2017
7. Strain engineering in Ge/GeSn core/shell nanowires
- Author
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Assali, S., primary, Albani, M., additional, Bergamaschini, R., additional, Verheijen, M. A., additional, Li, A., additional, Kölling, S., additional, Gagliano, L., additional, Bakkers, E. P. A. M., additional, and Miglio, L., additional
- Published
- 2019
- Full Text
- View/download PDF
8. Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case
- Author
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Gagliano, L, Albani, M, Verheijen, M, Bakkers, E, Miglio, L, Gagliano, Luca, Albani, Marco, Verheijen, Marcel A, Bakkers, Erik P A M, Miglio, Leonida, Gagliano, L, Albani, M, Verheijen, M, Bakkers, E, Miglio, L, Gagliano, Luca, Albani, Marco, Verheijen, Marcel A, Bakkers, Erik P A M, and Miglio, Leonida
- Abstract
Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-x P core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.
- Published
- 2018
9. Efficient Green Emission from Wurtzite AlxIn1- xP Nanowires
- Author
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Gagliano, L. (author), Kruijsse, M. (author), Schefold, J. D.D. (author), Belabbes, A. (author), Verheijen, M.P.A.M. (author), Meuret, S. (author), Kölling, S. (author), Polman, A. (author), Bechstedt, F. (author), Haverkort, J. E.M. (author), Bakkers, E.P.A.M. (author), Gagliano, L. (author), Kruijsse, M. (author), Schefold, J. D.D. (author), Belabbes, A. (author), Verheijen, M.P.A.M. (author), Meuret, S. (author), Kölling, S. (author), Polman, A. (author), Bechstedt, F. (author), Haverkort, J. E.M. (author), and Bakkers, E.P.A.M. (author)
- Abstract
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires., QN/Bakkers Lab
- Published
- 2018
- Full Text
- View/download PDF
10. Monte Carlo application based on GEANT4 toolkit to simulate a laser-plasma electron beam line for radiobiological studies
- Author
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Lamia, D, Russo, G, Casarino, C, Gagliano, L, Candiano, G, Labate, L, Baffigi, F, Fulgentini, L, Giulietti, A, Koester, P, Palla, D, Gizzi, L, Gilardi, M, Lamia D., Russo G., Casarino C., Gagliano L., Candiano G. C., Labate L., Baffigi F., Fulgentini L., Giulietti A., Koester P., Palla D., Gizzi L. A., Gilardi M. C., Lamia, D, Russo, G, Casarino, C, Gagliano, L, Candiano, G, Labate, L, Baffigi, F, Fulgentini, L, Giulietti, A, Koester, P, Palla, D, Gizzi, L, Gilardi, M, Lamia D., Russo G., Casarino C., Gagliano L., Candiano G. C., Labate L., Baffigi F., Fulgentini L., Giulietti A., Koester P., Palla D., Gizzi L. A., and Gilardi M. C.
- Abstract
We report on the development of a Monte Carlo application, based on the GEANT4 toolkit, for the characterization and optimization of electron beams for clinical applications produced by a laser-driven plasma source. The GEANT4 application is conceived so as to represent in the most general way the physical and geometrical features of a typical laser-driven accelerator. It is designed to provide standard dosimetric figures such as percentage dose depth curves, two-dimensional dose distributions and 3D dose profiles at different positions both inside and outside the interaction chamber. The application was validated by comparing its predictions to experimental measurements carried out on a real laser-driven accelerator. The work is aimed at optimizing the source, by using this novel application, for radiobiological studies and, in perspective, for medical applications.
- Published
- 2015
11. Hexagonal III-Phosphide alloys for solid state lighting
- Author
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Gagliano, L., Bakkers, Erik P.A.M., Haverkort, Jos E.M., Photonics and Semiconductor Nanophysics, and Advanced Nanomaterials & Devices
- Subjects
16:00h, Auditorium, Collegezaal 4 - Published
- 2017
12. National Launch System cycle 1 loads and models data book
- Author
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Bugg, F, Brunty, J, Ernsberger, G, Mcghee, D, Gagliano, L, Harrington, F, Meyer, D, and Blades, E
- Subjects
Launch Vehicles And Space Vehicles - Abstract
This document contains preliminary cycle 1 loads for the National Launch System (NLS) 1 and 2 vehicles. The loads provided and recommended as design loads represent the maximum load expected during prelaunch and flight regimes, i.e., limit loads, except that propellant tank ullage pressure has not been included. Ullage pressure should be added to the loads book values for cases where the addition results in higher loads. The loads must be multiplied by the appropriate factors of safety to determine the ultimate loads for which the structure must be capable.
- Published
- 1992
13. Efficient Green Emission from Wurtzite AlxIn1–xP Nanowires
- Author
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Gagliano, L., primary, Kruijsse, M., additional, Schefold, J. D. D., additional, Belabbes, A., additional, Verheijen, M. A., additional, Meuret, S., additional, Koelling, S., additional, Polman, A., additional, Bechstedt, F., additional, Haverkort, J.E.M., additional, and Bakkers, E.P.A.M., additional
- Published
- 2018
- Full Text
- View/download PDF
14. Crystal Phase Quantum Well Emission with Digital Control
- Author
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Assali, S., Laehnemann, J., Vu, T. T. T., Jöns, Klaus, Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., Haverkort, J. E. M., Assali, S., Laehnemann, J., Vu, T. T. T., Jöns, Klaus, Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., and Haverkort, J. E. M.
- Abstract
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems., QC 20171102
- Published
- 2017
- Full Text
- View/download PDF
15. Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays
- Author
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Assali, S., Dijkstra, A., Li, A., Kölling, S., Verheijen, M.A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P.M., Haverkort, J.E.M., Bakkers, E.P.A.M., Assali, S., Dijkstra, A., Li, A., Kölling, S., Verheijen, M.A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P.M., Haverkort, J.E.M., and Bakkers, E.P.A.M.
- Abstract
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices
- Published
- 2017
16. Strain and strain-driven effects in coaxial nanowires
- Author
-
Miglio, L, Albani, M, Bergamaschini, R, Gagliano, L, Assali, S, Verheijen, M, Bakkers, E, MIGLIO, LEONIDA, ALBANI, MARCO GIOCONDO, BERGAMASCHINI, ROBERTO, Bakkers, E., Miglio, L, Albani, M, Bergamaschini, R, Gagliano, L, Assali, S, Verheijen, M, Bakkers, E, MIGLIO, LEONIDA, ALBANI, MARCO GIOCONDO, BERGAMASCHINI, ROBERTO, and Bakkers, E.
- Published
- 2017
17. Crystal phase quantum well emission with digital control
- Author
-
Assali, Simone, Lähnemann, J., Vu, T. T. T., Jöns, K. D., Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., Haverkort, J. E. M., Assali, Simone, Lähnemann, J., Vu, T. T. T., Jöns, K. D., Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., and Haverkort, J. E. M.
- Abstract
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.
- Published
- 2017
18. Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures
- Author
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Gagliano, L, Rossetto, L, Mondiali, V, Lodari, M, Bollani, M, Chrastina, D, SCOPECE, DANIELE, BARGET, MICHAEL REINER, DE CESARI, SEBASTIANO, PEZZOLI, FABIO, MONTALENTI, FRANCESCO CIMBRO MATTIA, BONERA, EMILIANO, Gagliano, L, Rossetto, L, Scopece, D, Mondiali, V, Lodari, M, Barget, M, DE CESARI, S, Pezzoli, F, Bollani, M, Chrastina, D, Montalenti, F, and Bonera, E
- Subjects
Germanium, SiGe, heteroepitaxy, strain, Raman spectroscopy - Published
- 2014
19. Crystal Phase Quantum Well Emission with Digital Control
- Author
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Assali, S., primary, Lähnemann, J., additional, Vu, T. T. T., additional, Jöns, K. D., additional, Gagliano, L., additional, Verheijen, M. A., additional, Akopian, N., additional, Bakkers, E. P. A. M., additional, and Haverkort, J. E. M., additional
- Published
- 2017
- Full Text
- View/download PDF
20. Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
- Author
-
Assali, S., primary, Dijkstra, A., additional, Li, A., additional, Koelling, S., additional, Verheijen, M. A., additional, Gagliano, L., additional, von den Driesch, N., additional, Buca, D., additional, Koenraad, P. M., additional, Haverkort, J. E. M., additional, and Bakkers, E. P. A. M., additional
- Published
- 2017
- Full Text
- View/download PDF
21. Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires
- Author
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Gagliano, L., primary, Belabbes, A., additional, Albani, M., additional, Assali, S., additional, Verheijen, M. A., additional, Miglio, L., additional, Bechstedt, F., additional, Haverkort, J. E. M., additional, and Bakkers, E. P. A. M., additional
- Published
- 2016
- Full Text
- View/download PDF
22. Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning
- Author
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Bollani, M, primary, Chrastina, D, additional, Ruggeri, R, additional, Nicotra, G, additional, Gagliano, L, additional, Bonera, E, additional, Mondiali, V, additional, Marzegalli, A, additional, Montalenti, F, additional, Spinella, C, additional, and Miglio, L, additional
- Published
- 2016
- Full Text
- View/download PDF
23. Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
- Author
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Bollani, M, Chrastina, D, Gagliano, L, Rossetto, L, Scopece, D, Barget, M, Mondiali, V, Frigerio, J, Lodari, M, Pezzoli, F, Montalenti, F, Bonera, E, SCOPECE, DANIELE, BARGET, MICHAEL REINER, PEZZOLI, FABIO, MONTALENTI, FRANCESCO CIMBRO MATTIA, BONERA, EMILIANO, Bollani, M, Chrastina, D, Gagliano, L, Rossetto, L, Scopece, D, Barget, M, Mondiali, V, Frigerio, J, Lodari, M, Pezzoli, F, Montalenti, F, Bonera, E, SCOPECE, DANIELE, BARGET, MICHAEL REINER, PEZZOLI, FABIO, MONTALENTI, FRANCESCO CIMBRO MATTIA, and BONERA, EMILIANO
- Abstract
We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.
- Published
- 2015
24. Efficient Green Emission from Wurtzite AlxIn1-xP Nanowires.
- Author
-
Gagliano, L., Kruijsse, M., Schefold, J. D. D., Belabbes, A., Verheijen, M. A., Meuret, S., Koelling, S., Polman, A., Bechstedt, F., Haverkort, J. E. M., and Bakkers, E. P. A. M.
- Subjects
- *
WURTZITE , *NANOWIRES , *BAND gaps , *SEMICONDUCTORS , *LIGHT emitting diodes , *PHOTOLUMINESCENCE - Abstract
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
25. Exploring Crystal Phase Switching in GaP Nanowires
- Author
-
Assali, S., primary, Gagliano, L., additional, Oliveira, D. S., additional, Verheijen, M. A., additional, Plissard, S. R., additional, Feiner, L. F., additional, and Bakkers, E. P. A. M., additional
- Published
- 2015
- Full Text
- View/download PDF
26. Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays.
- Author
-
Assali, S., Dijkstra, A., Li, A., Koelling, S., Verheijen, M. A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P. M., Haverkort, J. E. M., and Bakkers, E. P. A. M.
- Published
- 2017
- Full Text
- View/download PDF
27. Strain release management in SiGe/Si films by substrate patterning
- Author
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Mondiali, V., primary, Bollani, M., additional, Chrastina, D., additional, Rubert, R., additional, Chahine, G., additional, Richard, M. I., additional, Cecchi, S., additional, Gagliano, L., additional, Bonera, E., additional, Schülli, T., additional, and Miglio, L., additional
- Published
- 2014
- Full Text
- View/download PDF
28. Bayesian System for Differential Cryptanalysis of DES
- Author
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Paola, A. De, primary, Gagliano, L., additional, and Re, G. Lo, additional
- Published
- 2014
- Full Text
- View/download PDF
29. Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires.
- Author
-
Gagliano, L., Belabbes, A., Albani, M., Assali, S., Verheijen, M. A., Miglio, L., Bechstedt, F., Haverkort, J. E. M., and Bakkers, E. P. A. M.
- Subjects
- *
NANOWIRES , *SEMICONDUCTORS , *CRYSTAL structure , *PHOTOLUMINESCENCE , *WURTZITE - Abstract
Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InxGa1-xP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (Γ8c-Γ9v) to direct (Γ7c-Γ9v) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InxGa1-xP. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
30. Lithographically defined low dimensional SiGe nanostripes as silicon stressors
- Author
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Bollani, M., primary, Chrastina, D., additional, Fiocco, M., additional, Mondiali, V., additional, Frigerio, J., additional, Gagliano, L., additional, and Bonera, E., additional
- Published
- 2012
- Full Text
- View/download PDF
31. El órgano endotelial.
- Author
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Gagliano, L., Ochoa, G., Manso, D., Genero, G., Molina, G., and Boeris, M.
- Subjects
- *
ENDOTHELIUM , *ENDOTHELIAL cells , *ORGANS (Anatomy) , *MAMMAL endothelium , *BLOOD - Abstract
The present article reviews the latest information of the endothelial organs. The endothelium is a thin layer of cells that recover the lumen of the blood vessels, and in the human being represent an area of approximately 400 m² and weight 1500 g with capacity of secretion of either microor macro molecules. [ABSTRACT FROM AUTHOR]
- Published
- 2012
32. Shallow submarine gas manifestations in the Aegean Sea: preliminary catalogue and geochemical characterization
- Author
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Kyriaki Daskalopoulou, D’alessandro, W., Longo, M., Sergio Calabrese, Lorenza Li Vigni, Kyriakopoulos, L., Gagliano, L., Italiano, F., and Daskalopoulou, K., D’Alessandro, W., Longo, M., Calabrese, S., Li Vigni, L., Kyriakopoulos, K., L. Gagliano, Italiano, F.
- Subjects
Submarine, gas manifestations, active volcanic arc, Kos, Greece ,Settore GEO/08 - Geochimica E Vulcanologia - Abstract
The Aegean area, like other regions of intense geodynamic activity, is characterised by extensive geogenic degassing. Gas manifestations widespread on land are also very frequent underwater. The present study aims at producing a first catalogue of these manifestations together with the geochemical characterization of the emitted gases. Sixty-one samples at 21 different sites have been collected by diving up to 15 m depth, mainly along the south Aegean active volcanic arc (SAAVA). The sites displayed very different gas fluxes. Most of them showed a very sluggish gas bubbling while a few had spatially large and strong bubbling. The most intense manifestation has been found at Kos Island along Paradise beach. Here a total output of about 2.7 tons/day from an area of about 250 m2 has been measured in September 2016. Samples have been analysed for their chemical (He, Ne, Ar, O2, N2, H2, H2S, CH4 and CO2) and isotopic (He, Ar, CO2-C, CH4-C, CH4-H) composition by gas chromatography and mass-spectrometry methodologies.
33. Reemplazo del oxigeno medicinal por aire comprimido en anestesia inhalatoria en caninos. Evaluación de parámetros sanguíneos.
- Author
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Toso, R. E., Toribio, M. S., Gagliano, L. A., Riesco, S., and Mengele, P.
- Subjects
- *
DOGS , *ANIMAL anesthesia , *HALOTHANE , *OXYGEN , *COMPRESSED air - Abstract
The objective of this work was to evaluate the efficiency to use atmospheric air as a substitute of oxygen in anaesthetic dogs with halothane. The work was carried out in two groups of fife animals each using either oxygen or compressed air. Physiologic parameters such as clinical signs and arterial blood analysed were done. To evaluate the breath efficiency blood arterial samples were taken at 30, 60 and 90 minutes trough measurement of the partial pressure of PCO2, PO2 and pH. Under the present condition the inhalatory anaesthesia with halothane and assisted breath using atmospheric air with quirurgic time until 90 minutes shown comparative parameter as that using medicinal oxygen. [ABSTRACT FROM AUTHOR]
- Published
- 2006
34. Strain engineering in Ge/GeSn core/shell nanowires
- Author
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Simone Assali, Leo Miglio, Luca Gagliano, Sebastian Kölling, Roberto Bergamaschini, M Albani, Marcel A. Verheijen, Erik P. A. M. Bakkers, Ang Li, Photonics and Semiconductor Nanophysics, Advanced Nanomaterials & Devices, Plasma & Materials Processing, Semiconductor Nanostructures and Impurities, Center for Quantum Materials and Technology Eindhoven, Atomic scale processing, Assali, S, Albani, M, Bergamaschini, R, Verheijen, M, Li, A, Kolling, S, Gagliano, L, Bakkers, E, and Miglio, L
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,finite element method ,Nucleation ,Nanowire ,Shell (structure) ,FOS: Physical sciences ,Applied Physics (physics.app-ph) ,02 engineering and technology ,Epitaxy ,01 natural sciences ,strain ,Strain engineering ,0103 physical sciences ,010302 applied physics ,Condensed Matter - Materials Science ,Condensed matter physics ,business.industry ,core ,Materials Science (cond-mat.mtrl-sci) ,Physics - Applied Physics ,021001 nanoscience & nanotechnology ,Core (optical fiber) ,GeSn ,Semiconductor ,shell ,elasticity ,Direct and indirect band gaps ,0210 nano-technology ,business - Abstract
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry by controlling the Ge core diameter and correlating the results with theoretical strain calculations. Incorporation of the Sn content in the 10-20 at. % range is achieved with Ge core diameters ranging from 50 nm to 100 nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multifaceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.
- Published
- 2019
35. Pseudodirect to direct compositional crossover in wurtzite GaP/InxGa1-xP core-shell nanowires
- Author
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Leo Miglio, Jem Jos Haverkort, Simone Assali, Luca Gagliano, A. Belabbes, Epam Erik Bakkers, M Albani, Marcel A. Verheijen, Friedhelm Bechstedt, Gagliano, L, Belabbes, A, Albani, M, Assali, S, Verheijen, M, Miglio, L, Bechstedt, F, Haverkort, J, Bakkers, E, Photonics and Semiconductor Nanophysics, Plasma & Materials Processing, and Atomic scale processing
- Subjects
Materials science ,Photoluminescence ,Orders of magnitude (temperature) ,Nanowire ,chemistry.chemical_element ,Bioengineering ,Nanotechnology ,Condensed Matter Physic ,02 engineering and technology ,Crystal structure ,01 natural sciences ,0103 physical sciences ,General Materials Science ,Wurtzite crystal structure ,010302 applied physics ,Condensed matter physics ,business.industry ,Mechanical Engineering ,Chemistry (all) ,General Chemistry ,Carrier lifetime ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Semiconductor ,chemistry ,Materials Science (all) ,0210 nano-technology ,business ,Indium - Abstract
Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/In(x)G(x)G(1-x) core shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate pseudodirect (Gamma(8c)-Gamma(9v)) to direct ((Gamma 7c-Gamma 9v)) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 +/- 0.04
- Published
- 2016
36. Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning
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Valeria Mondiali, Monica Bollani, Giuseppe Nicotra, Anna Marzegalli, Francesco Montalenti, Emiliano Bonera, C. Spinella, L Gagliano, Riccardo Ruggeri, L Miglio, Daniel Chrastina, Bollani, M, Chrastina, D, Ruggeri, R, Nicotra, G, Gagliano, L, Bonera, E, Mondiali, V, Marzegalli, A, Montalenti, F, Spinella, C, and Miglio, L
- Subjects
Morphology (linguistics) ,Materials science ,EBL ,Field (physics) ,misfit dislocation ,SiGe ,Nucleation ,Bioengineering ,02 engineering and technology ,Substrate (electronics) ,01 natural sciences ,Condensed Matter::Materials Science ,semiconductor nanostrucutre ,0103 physical sciences ,General Materials Science ,SiGe patterning ,Mechanics of Material ,anisotropic strain ,Electrical and Electronic Engineering ,High-resolution transmission electron microscopy ,Spectroscopy ,Anisotropy ,010302 applied physics ,Range (particle radiation) ,Condensed matter physics ,Mechanical Engineering ,Chemistry (all) ,General Chemistry ,HRTEM analisy ,021001 nanoscience & nanotechnology ,Crystallography ,Mechanics of Materials ,TEM ,Materials Science (all) ,0210 nano-technology - Abstract
In this work we will show how local substrate patterning leads to a long range controlled propagation of dislocations in SiGe films grown on Si(001) substrates. Dislocations preferentially nucleate in the inhomogeneous strain field associated with the patterned pits, and then partialize on the local (111) surfaces which form the pit sidewalls. The resulting V-shaped defects extend for several microns and effectively block the propagation of randomly nucleated dislocations which propagate in the perpendicular direction. The surface morphology and strain fields associated with the extended defects have been characterized by atomic force microscopy and μRaman spectroscopy, and the defects have been directly observed with high resolution transmission electron microscopy.
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- 2016
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37. Twofold origin of strain-induced bending in core–shell nanowires: the GaP/InGaP case
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M Albani, Marcel A. Verheijen, Erik P. A. M. Bakkers, Luca Gagliano, Leo Miglio, Advanced Nanomaterials & Devices, Plasma & Materials Processing, Center for Quantum Materials and Technology Eindhoven, Atomic scale processing, Gagliano, L, Albani, M, Verheijen, M, Bakkers, E, and Miglio, L
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Materials science ,media_common.quotation_subject ,Nanowire ,Bioengineering ,02 engineering and technology ,01 natural sciences ,Asymmetry ,Condensed Matter::Materials Science ,strain ,0103 physical sciences ,General Materials Science ,Electrical and Electronic Engineering ,Thin film ,010306 general physics ,semiconductor nanowire, core–shell, wurtzite, strain, bending ,Wurtzite crystal structure ,media_common ,Condensed matter physics ,Mechanical Engineering ,core ,Heterojunction ,General Chemistry ,bending ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Finite element method ,core-shell ,semiconductor nanowire ,wurtzite ,shell ,Mechanics of Materials ,Transmission electron microscopy ,0210 nano-technology ,Ternary operation - Abstract
Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-xP core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.
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- 2018
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38. Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
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Luca Gagliano, Daniel Chrastina, Fabio Pezzoli, Jacopo Frigerio, Monica Bollani, Mario Lodari, Emiliano Bonera, Lidia Rossetto, Michael Barget, Francesco Montalenti, Valeria Mondiali, Daniele Scopece, Bollani, M, Chrastina, D, Gagliano, L, Rossetto, L, Scopece, D, Barget, M, Mondiali, V, Frigerio, J, Lodari, M, Pezzoli, F, Montalenti, F, and Bonera, E
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Materials science ,Fabrication ,Physics and Astronomy (miscellaneous) ,Strain (chemistry) ,Germanium ,business.industry ,phonons ,nanofabrications ,chemistry.chemical_element ,Nanotechnology ,Epitaxy ,Germanium, Elemental semiconductors, Nanofabrication, Phonons, Elasticity ,Semiconductor ,FIS/01 - FISICA SPERIMENTALE ,chemistry ,Ultimate tensile strength ,elasticity ,elemental semiconductors ,Deformation (engineering) ,Composite material ,Electronic band structure ,business - Abstract
We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers. (C) 2015 AIP Publishing LLC.
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- 2015
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39. Monte Carlo application based on GEANT4 toolkit to simulate a Laser-Plasma electron beam line for radiobiological studies
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D. Lamia a, G. Russo a, C. Casarino a, L. Gagliano a, G.C. Candiano a, L. Labate b, e, F. Baffigi b, L. Fulgentini b, A. Giulietti b, P. Koester b, D. Palla b, L.A. Gizzi b, M.C. Gilardi c, d, Lamia, D, Russo, G, Casarino, C, Gagliano, L, Candiano, G, Labate, L, Baffigi, F, Fulgentini, L, Giulietti, A, Koester, P, Palla, D, Gizzi, L, and Gilardi, M
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Physics ,Nuclear and High Energy Physics ,medicine.medical_specialty ,Plasma electron ,Monte Carlo method ,Electron ,Plasma ,GEANT4, IOERT, Laser-driven beams, Medical applications ,Laser ,Computational physics ,Characterization (materials science) ,law.invention ,IOERT ,Perspective (geometry) ,Beamline ,law ,medicine ,Laser-driven beams ,Medical physics ,Instrumentation ,GEANT4 ,Medical applications - Abstract
We report on the development of a Monte Carlo application, based on the GEANT4 toolkit, for the characterization and optimization of electron beams for clinical applications produced by a laser-driven plasma source. The GEANT4 application is conceived so as to represent in the most general way the physical and geometrical features of a typical laser-driven accelerator. It is designed to provide standard dosimetric figures such as percentage dose depth curves, two-dimensional dose distributions and 3D dose profiles at different positions both inside and outside the interaction chamber. The application was validated by comparing its predictions to experimental measurements carried out on a real laser-driven accelerator. The work is aimed at optimizing the source, by using this novel application, for radiobiological studies and, in perspective, for medical applications.
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- 2015
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40. Design of an Adaptive Bayesian System for Sensor Data Fusion
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Alessandra De Paola, L. Gagliano, Gaglio, S, Lo Re, G, De Paola, A, and Gagliano, L
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Settore ING-INF/05 - Sistemi Di Elaborazione Delle Informazioni ,Ambient Intelligence ,Pervasive Systems ,Computer science ,Distributed computing ,Sensor node ,Bayesian probability ,Bayesian network ,Inference ,Noise (video) ,Sensor fusion ,Wireless sensor network - Abstract
Many artificial intelligent systems exploit a wide set of sensor devices to monitor the environment. When the sensors employed are low-cost, off-the-shelf devices, such as Wireless Sensor Networks (WSN), the data gathered through the sensory infrastructure may be affected by noise, and thus only partially correlated to the phenomenon of interest. One way of overcoming these limitations might be to adopt a high-level method to perform multi-sensor data fusion. Bayesian Networks (BNs) represent a suitable tool for performing refined artificial reasoning on heterogeneous sensory data, and for dealing with the intrinsic uncertainty of such data. However, the configuration of the sensory infrastructure can significantly affect the performance of the whole system, both in terms of the uncertainty of the inferred knowledge and in term of the hardware performance of the sensory infrastructure itself. This chapter proposes an adaptive Bayesian System whose goal is to infer an environment feature, such as activities performed by the user, by exploiting a wide set of sensory devices characterized by limited energy resources. The system proposed here is able to adaptively configure the sensory infrastructure so as to simultaneously maximize the inference accuracy and the network lifetime by means of a multi-objective optimization.
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- 2014
41. Lithographically defined low dimensional SiGe nanostripes as silicon stressors
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Valeria Mondiali, Daniel Chrastina, Monica Bollani, M. Fiocco, Emiliano Bonera, Jacopo Frigerio, L. Gagliano, Bollani, M, Chrastina, D, Fiocco, M, Mondiali, V, Frigerio, J, Gagliano, L, and Bonera, E
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SiGe, stress, nanotechnology, Raman, lithography ,Materials science ,Silicon ,business.industry ,fungi ,General Physics and Astronomy ,chemistry.chemical_element ,Nanotechnology ,Heterojunction ,Chemical vapor deposition ,Conductivity ,Epitaxy ,Semiconductor ,Nanolithography ,chemistry ,Optoelectronics ,business ,Electron-beam lithography - Abstract
The introduction of strain in semiconductors is a well-known technique for increasing their conductivity and thus for enhancing the performance of silicon-based electronic devices. In the present work, we investigate the strain induced in the Si substrate by linear SiGe/Si structures with a width less than 100 nm. By varying the Ge content and geometrical parameters, it is possible to maximize the strain in the Si substrate without detrimental plastic relaxation in the SiGe stripes. The structures were defined by electron-beam lithography from strained SiGe deposited epitaxially by low-energy plasma-enhanced chemical vapor deposition. The strain in the heterostructures has been characterized by a combination of finite-element modeling, x-ray diffraction, and μRaman spectroscopy techniques. We show that nano-patterning induces an anisotropic strain relaxation in the SiGe stripe with a simultaneous strong compression of the Si substrate.
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- 2012
42. Strain release management in SiGe/Si films by substrate patterning
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Stefano Cecchi, Valeria Mondiali, L. Gagliano, T. U. Schülli, Marie-Ingrid Richard, Daniel Chrastina, R. Rubert, Monica Bollani, Leo Miglio, Emiliano Bonera, Gilbert André Chahine, Mondiali, V, Bollani, M, Chrastina, D, Rubert, R, Chahine, G, Richard, M, Cecchi, S, Gagliano, L, Bonera, E, Schülli, T, and Miglio, L
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strain,stress,Raman, SiGe, silicon, germanium, epitaxy, xrd, dislocation ,Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,Annealing (metallurgy) ,business.industry ,Nucleation ,chemistry.chemical_element ,Germanium ,Epitaxy ,symbols.namesake ,Crystallography ,chemistry ,symbols ,Optoelectronics ,Thermal stability ,Dislocation ,Raman spectroscopy ,business - Abstract
The nucleation and the evolution of dislocations in SiGe/Si(001) films can be controlled and confined along stripes aligned along pits carved in the substrate, leaving micrometric coherent areas free of dislocations. In this work, we have addressed the stability of such metastable areas versus, film thickness, different Ge contents (xGe = 10%-30%) and larger pit-pattern periods, revealing the flexibility and effectiveness of this method even for coherent areas of about 64 μm2. The thermal stability of such configuration has been finally verified by post-growth annealing treatment, in order to simulate device processing. Finally, l Raman spectroscopy and X-ray nanodiffraction have been used to characterize the periodic strain variations across the pattern.
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- 2014
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43. Bayesian System for Differential Cryptanalysis of DES
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G. Lo Re, A. De Paola, L. Gagliano, De Paola, A, Gagliano, L, and Lo Re, G
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Settore ING-INF/05 - Sistemi Di Elaborazione Delle Informazioni ,Neural cryptography ,Theoretical computer science ,Differential cryptanalysis ,business.industry ,Bayesian probability ,Bayesian network ,Cryptography ,Data_CODINGANDINFORMATIONTHEORY ,Encryption ,DES ,law.invention ,Bayesian Networks ,law ,Point (geometry) ,Cryptanalysis ,business ,differential cryptanalysi ,Mathematics ,differential cryptanalysis - Abstract
This paper proposes a new formalization for the differential cryptanalysis of DES (Data Encryption Standard) based on Bayesian Networks (BN), an artificial intelligence framework used for reasoning on data affected by uncertainty. Through the proposed approach it is possible to analyze DES from a novel point of view, thus paving the way for the development of a new class of cryptanalysis methods.
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44. Epileptic seizure forecasting with wearable-based nocturnal sleep features.
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Ding TY, Gagliano L, Jahani A, Toffa DH, Nguyen DK, and Bou Assi E
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- Humans, Male, Female, Adult, Middle Aged, Algorithms, Young Adult, Forecasting, Support Vector Machine, Accelerometry instrumentation, Electrocardiography, Polysomnography, Adolescent, Aged, Wearable Electronic Devices, Seizures, Epilepsy, Sleep physiology
- Abstract
Objective: Non-invasive biomarkers have recently shown promise for seizure forecasting in people with epilepsy. In this work, we developed a seizure-day forecasting algorithm based on nocturnal sleep features acquired using a smart shirt., Methods: Seventy-eight individuals with epilepsy admitted to the Centre hospitalier de l'Université de Montréal epilepsy monitoring unit wore the Hexoskin biometric smart shirt during their stay. The shirt continuously measures electrocardiography, respiratory, and accelerometry activity. Ten sleep features, including sleep efficiency, sleep latency, sleep duration, time spent in non-rapid eye movement sleep (NREM) and rapid eye movement sleep (REM), wakefulness after sleep onset, average heart and breathing rates, high-frequency heart rate variability, and the number of position changes, were automatically computed using the Hexoskin sleep algorithm. Each night's features were then normalized using a reference night for each patient. A support vector machine classifier was trained for pseudo-prospective seizure-day forecasting, with forecasting horizons of 16- and 24-h to include both diurnal and nocturnal seizures (24-h) or diurnal seizures only (16-h). The algorithm's performance was assessed using a nested leave-one-patient-out cross-validation approach., Results: Improvement over chance (IoC) performances were achieved for 48.7% and 40% of patients with the 16- and 24-h forecasting horizons, respectively. For patients with IoC performances, the proposed algorithm reached mean IoC, sensitivity and time in warning of 34.3%, 86.0%, and 51.7%, respectively for the 16-h horizon, and 34.2%, 64.4% and 30.2%, respectively, for the 24-h horizon., Significance: Smart shirt-based nocturnal sleep analysis holds promise as a non-invasive approach for seizure-day forecasting in a subset of people with epilepsy. Further investigations, particularly in a residential setting with long-term recordings, could pave the way for the development of innovative and practical seizure forecasting devices., Plain Language Summary: Seizure forecasting with wearable devices may improve the quality of life of people living with epilepsy who experience unpredictable, recurrent seizures. In this study, we have developed a seizure forecasting algorithm using sleep characteristics obtained from a smart shirt worn at night by a large number of hospitalized patients with epilepsy (78). A daily seizure forecast was generated following each night using machine learning methods. Our results show that around half of people with epilepsy may benefit from such an approach., (© 2024 The Author(s). Epilepsia Open published by Wiley Periodicals LLC on behalf of International League Against Epilepsy.)
- Published
- 2024
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45. Evaluation of Commercially Available Seizure Detection Wearables in Canada: Current Evidence.
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Lamrani Y, Jahani A, Gagliano L, Nguyen DK, and Bou Assi E
- Abstract
Wearable-based seizure detection devices hold promise in reducing seizure-related adverse events and relieving the daily stress experienced by people with epilepsy. In this work, we present the latest evidence regarding the performance of three seizure detection wearables (eight studies) commercially available in Canada to provide guidance to clinicians. Overall, their ability to detect focal-to-bilateral and/or generalized tonic-clonic seizures ranges between 21.0% and 98.15% in sensitivity, with the 24h false alarm rates ranging from 0 to 1.28. While performance in epilepsy monitoring units show promise, the lack of evidence in outpatient settings precludes strong recommendations for their use in daily life.
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- 2024
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46. Cross-bispectrum connectivity of intracranial EEG: A novel approach to seizure onset zone localization.
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Gagliano L, Chang A, Shokooh LA, Toffa DH, Lesage F, Sawan M, Nguyen DK, and Assi EB
- Subjects
- Humans, Brain diagnostic imaging, Electroencephalography methods, Seizures diagnosis, Electrocorticography, Epilepsy
- Abstract
Connectivity analyses of intracranial electroencephalography (iEEG) could guide surgical planning for epilepsy surgery by improving the delineation of the seizure onset zone. Traditional approaches fail to quantify important interactions between frequency components. To assess if effective connectivity based on cross-bispectrum -a measure of nonlinear multivariate cross-frequency coupling- can quantitatively identify generators of seizure activity, cross-bispectrum connectivity between channels was computed from iEEG recordings of 5 patients (34 seizures) with good postsurgical outcome. Personalized thresholds of 50% and 80% of the maximum coupling values were used to identify generating electrode channels. In all patients, outflow coupling between α (8-15 Hz) and β (16-31 Hz) frequencies identified at least one electrode inside the resected seizure onset zone. With the 50% and 80% thresholds respectively, an average of 5 (44.7%; specificity = 82.6%) and 2 (22.5%; specificity = 99.0%) resected electrodes were correctly identified. Results show promise for the automatic identification of the seizure onset zone based on cross-bispectrum connectivity analysis.
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- 2023
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47. Decrease in wearable-based nocturnal sleep efficiency precedes epileptic seizures.
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Gagliano L, Ding TY, Toffa DH, Beauregard L, Robert M, Lesage F, Sawan M, Nguyen DK, and Bou Assi E
- Abstract
Introduction: While it is known that poor sleep is a seizure precipitant, this association remains poorly quantified. This study investigated whether seizures are preceded by significant changes in sleep efficiency as measured by a wearable equipped with an electrocardiogram, respiratory bands, and an accelerometer., Methods: Nocturnal recordings from 47 people with epilepsy hospitalized at our epilepsy monitoring unit were analyzed (304 nights). Sleep metrics during nights followed by epileptic seizures (24 h post-awakening) were compared to those of nights which were not., Results: Lower sleep efficiency (percentage of sleep during the night) was found in the nights preceding seizure days ( p < 0.05). Each standard deviation decrease in sleep efficiency and increase in wake after sleep onset was respectively associated with a 1.25-fold (95 % CI: 1.05 to 1.42, p < 0.05) and 1.49-fold (95 % CI: 1.17 to 1.92, p < 0.01) increased odds of seizure occurrence the following day. Furthermore, nocturnal seizures were associated with significantly lower sleep efficiency and higher wake after sleep onset ( p < 0.05), as well as increased odds of seizure occurrence following wake (OR: 5.86, 95 % CI: 2.99 to 11.77, p < 0.001)., Discussion: Findings indicate lower sleep efficiency during nights preceding seizures, suggesting that wearable sensors could be promising tools for sleep-based seizure-day forecasting in people with epilepsy., Competing Interests: The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest., (Copyright © 2023 Gagliano, Ding, Toffa, Beauregard, Robert, Lesage, Sawan, Nguyen and Bou Assi.)
- Published
- 2023
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48. Epileptic Prodromes: Insights from Surveying 196 Patients and 150 Caregivers.
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Gagliano L, Bou Assi E, Herrera-Fortin T, Lesage F, Sawan M, and Nguyen DK
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- Humans, Seizures, Surveys and Questionnaires, Algorithms, Electroencephalography, Caregivers, Epilepsy diagnosis
- Abstract
Objective: Uncontrolled epilepsy creates a constant source of worry for patients and puts them at a high risk of injury. Identifying recurrent "premonitory" symptoms of seizures and using them to recalibrate seizure prediction algorithms may improve prediction performances. This study aimed to investigate patients' ability to predict oncoming seizures based on preictal symptoms., Methods: Through an online survey, demographics and clinical characteristics (e.g., seizure frequency, epilepsy duration, and postictal symptom duration) were collected from people with epilepsy and caregivers across Canada. Respondents were asked to answer questions regarding their ability to predict seizures through warning symptoms. A total of 196 patients and 150 caregivers were included and were separated into three groups: those who reported warning symptoms within the 5 minutes preceding a seizure, prodromes (symptoms earlier than 5 minutes before seizure), and no warning symptoms., Results: Overall, 12.2% of patients and 12.0% of caregivers reported predictive prodromes ranging from 5 minutes to more than 24 hours before the seizures (median of 2 hours). The most common were dizziness/vertigo (28%), mood changes (26%), and cognitive changes (21%). Statistical testing showed that respondents who reported prodromes also reported significantly longer postictal recovery periods compared to those who did not report predictive prodromes ( P < 0.05)., Conclusion: Findings suggest that patients who present predictive seizure prodromes may be characterized by longer patient-reported postictal recovery periods. Studying the correlation between seizure severity and predictability and investigating the electrical activity underlying prodromes may improve our understanding of preictal mechanisms and ability to predict seizures.
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- 2023
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49. Unsupervised Clustering of HRV Features Reveals Preictal Changes in Human Epilepsy.
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Gagliano L, Assi EB, Toffa DH, Nguyen DK, and Sawan M
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- Cluster Analysis, Electroencephalography, Heart Rate, Humans, Seizures diagnosis, Epilepsy
- Abstract
Over a third of patients suffering from epilepsy continue to live with recurrent disabling seizures and would greatly benefit from personalized seizure forecasting. While electroencephalography (EEG) remains most popular for studying subject-specific epileptic precursors, dysfunctions of the autonomous nervous system, notably cardiac activity measured in heart rate variability (HRV), have also been associated with epileptic seizures. This work proposes an unsupervised clustering technique which aims to automatically identify preictal HRV changes in 9 patients who underwent simultaneous electrocardiography (ECG) and intracranial EEG presurgical monitoring at the University of Montreal Hospital Center. A 2-class k-means clustering combined with a quantitative preictal HRV change detection technique were adopted in a subject- and seizure-specific manner. Results indicate inter and intra-patient variability in preictal HRV changes (between 3.5 and 6.5 min before seizure onset) and a statistically significant negative correlation between the time of change in HRV state and the duration of seizures (p<0.05). The presented findings show promise for new avenues of research regarding multimodal seizure prediction and unsupervised preictal time assessment.Clinical Relevance- This study proposed an unsupervised technique for quantitatively identifying preictal HRV changes which can be eventually used to implement an ECG-based seizure forecasting algorithm.
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- 2020
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50. Ballistic Phonons in Ultrathin Nanowires.
- Author
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Vakulov D, Gireesan S, Swinkels MY, Chavez R, Vogelaar T, Torres P, Campo A, De Luca M, Verheijen MA, Koelling S, Gagliano L, Haverkort JEM, Alvarez FX, Bobbert PA, Zardo I, and Bakkers EPAM
- Abstract
According to Fourier's law, a temperature difference across a material results in a linear temperature profile and a thermal conductance that decreases inversely proportional to the system length. These are the hallmarks of diffusive heat flow. Here, we report heat flow in ultrathin (25 nm) GaP nanowires in the absence of a temperature gradient within the wire and find that the heat conductance is independent of wire length. These observations deviate from Fourier's law and are direct proof of ballistic heat flow, persisting for wire lengths up to at least 15 μm at room temperature. When doubling the wire diameter, a remarkably sudden transition to diffusive heat flow is observed. The ballistic heat flow in the ultrathin wires can be modeled within Landauer's formalism by ballistic phonons with an extraordinarily long mean free path.
- Published
- 2020
- Full Text
- View/download PDF
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