123 results on '"Gaggero Sager, L.M."'
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2. Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects
3. Self-similar transmission patterns induced by magnetic field effects in graphene
4. A physical model for dementia
5. Electron transport in AlxGa1−xAs δ-MIGFETs: Conductivity enhancement induced by magnetic field effects
6. A non-extensive statistical model for time-dependent multiple breakage particle-size distribution
7. Optical properties of Cantor nanostructures made from porous silicon: A sensing application
8. Binding energy of a donor impurity in GaAs [formula omitted] systems under electric and magnetic fields, and hydrostatic pressure
9. The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs
10. Hole-level structure of double [formula omitted]-doped quantum wells in Si: The influence of the split-off band
11. Exchange and correlation in the Thomas–Fermi approximation
12. Mean life times of quasi-bound states in δ-doped GaAs quantum wells
13. Calculation of electronic properties in AlxGa1−x delta-doped systems
14. Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations
15. Differential capacitance as a method of determining the presence of a quasi-bidimensional electronic gas
16. An alternative way of calculating the superlattice Green function for discrete media
17. Modelo propuesto para la identificación y predicción de bancos en dificultades, según el contexto del Comité de Supervisión Bancaria de Basilea
18. A simple model for delta-doped field-effect transistor electronic states
19. A model for single heterostructure field effect transistors
20. Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells
21. A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs
22. Hole energy levels in p-type δ-doped Si quantum wells
23. Self-consistent energy levels in p-type delta-doped quantum wells in GaAs
24. The nonlocal dielectric function in the random phase approximation for n-type delta-doped quantum wells in GaAs
25. Subband and transport calculations in double n-type delta-doped quantum wells in Si
26. Electron transport in Al Ga1−As δ-MIGFETs: Conductivity enhancement induced by magnetic field effects
27. Formas funcionales del potencial y la densidad electrónica para grafeno delta dopado
28. Radioterapia y el papel del sistema inmunitario
29. Combined method for simulating electron spectrum of δ-doped quantum wells in n-Si
30. Binding energy of a donor impurity in GaAs δ-doped systems under electric and magnetic fields, and hydrostatic pressure
31. Electron spectrum of δ-doped quantum wells by the Thomas–Fermi method at finite temperatures
32. Self-consistent calculation of transport properties in Si GaAs quantum wells as a function of the temperature
33. Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band
34. Tight-binding calculation of the electronic band structure of GaN, AlN and BN (001) ideal surfaces
35. Interface Magnetopolaron in III-V Nitride Single Heterostructures
36. Hole States in p-Type Delta-Doped ZnSe Quantum Wells
37. Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type ?-Doped Quantum Wells in Si and GaAs
38. Differential Capacitance for the AlN/GaN Heterostructure Field Effect Transistors
39. Electronic energy spectrum of nitride single heterostructure field effect transistors
40. A tight binding calculation of δ-doped quantum wells in Si
41. Quasi-Bound Hole States in δ-Doped Quantum Wells
42. Hole Energy Levels in p-Type δ-Doped Si Quantum Wells: Influence of the Split-Off Band
43. Electronic States of GaN-Based Heterostructures in a Thomas-Fermi Approximation
44. Self-Similarity in a Cantor-Like Semiconductor Quantum Well
45. Exchange and Correlation in a Semi-Empirical Tight Binding Calculation within the Thomas-Fermi Approximation
46. Electronic Structure of B ?-Doped Si Quantum Wells at Room Temperature: The High Density Limit
47. Self-consistent calculation of a delta-doped field effect transistor (δ-FET)
48. Differential capacitance as a method of determining the presence of a quasi-bidimensional electronic gas
49. Tight-binding calculation of the electronic band structure of GaN, AlN and BN (0 0 1) ideal surfaces
50. Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type δ-Doped Quantum Wells in Si and GaAs.
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