The nonlocal dielectric function in the random phase approximation for n-type delta-doped quantum wells in GaAs

The nonlocal dielectric function, which is calculated by using the random phase approximation (RPA), is obtained for a delta-doped quantum well of Si in GaAs. The behavior of the real and imaginary parts of the dielectric function is analyzed for different values of the energy of an exciting signal, the in-plane linear momentum and the distance from the doping plane as a function of the concentration of electrons in the doping plane.