1. Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process.
- Author
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Suwito, Galih R, Haffouz, Sofiane, Dalacu, Dan, Poole, Philip J, and Quitoriano, Nathaniel J
- Subjects
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ULTRAHIGH vacuum , *NUCLEATION , *METAL catalysts , *SUBSTRATES (Materials science) , *ADATOMS , *ATOMS , *SURFACE diffusion , *GOLD catalysts - Abstract
We reported nucleation mechanisms of InP directly on Si (8% lattice mismatch) under confined structures, called micro-crucibles, at ultra-high vacuum (UHV) by chemical beam epitaxy. These micro-crucibles are used to induce lateral growth in the presence of a micro-scale Au catalyst. It is found that at this UHV condition, the kinetics is dictated predominantly by adatom surface diffusion. Using a two-step growth process ((1) In-only exposure, then, (2) simultaneous In and P exposures), InP islands have been successfully nucleated on Si substrates under micro-crucible structures. The nucleation of these InP islands strongly depends on the metal catalyst location relative to the micro-crucible opening with metal catalysts residing closer to the opening having a higher chance to get incorporated with In and P atoms. Importantly, we found that using smaller micro-crucibles with double openings can increase the possibility of having metal catalysts reside near either opening and nucleate InP under micro-crucibles. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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