1. Diffusion of elements implanted in amorphous titanium disilicide
- Author
-
Olivier Thomas, J. Cotte, G. Göltz, François M. d'Heurle, C. Stanis, and P. Gas
- Subjects
Materials science ,Metallurgy ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Germanium ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter Physics ,Grain size ,Surfaces, Coatings and Films ,Amorphous solid ,chemistry.chemical_compound ,Ion implantation ,chemistry ,Sputtering ,Transmission electron microscopy ,Titanium disilicide ,Grain boundary - Abstract
The usual Si dopants, B, P, As, and Sb, plus Ge were implanted into thick (400 nm) TiSi 2 layers deposited in an amorphous state by sputtering from a compound target. Samples with the various implants were annealed at temperatures from 300 to 700°C and analyzed both by transmission electron microscopy and secondary ion spectroscopy. The annealed samples display a very large grain size, which complicates the interpretation of the concentration profiles obtained by SIMS. In the case of a high dose of B (1 × 10 16 atoms/cm 2 at least), there is an indication of grain boundary transport occurring mostly in the initial stage of the heat treatments, followed by phenomena dominated by a reduced solubility in the terminal large-grained matrix. With all elements, except Sb, evidence of diffusion is obtained at 400°C. Germanium diffusion is even observed at 300°C.
- Published
- 1993