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Diffusion of elements implanted in amorphous titanium disilicide
- Source :
- Applied Surface Science. 73:167-174
- Publication Year :
- 1993
- Publisher :
- Elsevier BV, 1993.
-
Abstract
- The usual Si dopants, B, P, As, and Sb, plus Ge were implanted into thick (400 nm) TiSi 2 layers deposited in an amorphous state by sputtering from a compound target. Samples with the various implants were annealed at temperatures from 300 to 700°C and analyzed both by transmission electron microscopy and secondary ion spectroscopy. The annealed samples display a very large grain size, which complicates the interpretation of the concentration profiles obtained by SIMS. In the case of a high dose of B (1 × 10 16 atoms/cm 2 at least), there is an indication of grain boundary transport occurring mostly in the initial stage of the heat treatments, followed by phenomena dominated by a reduced solubility in the terminal large-grained matrix. With all elements, except Sb, evidence of diffusion is obtained at 400°C. Germanium diffusion is even observed at 300°C.
- Subjects :
- Materials science
Metallurgy
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Germanium
Surfaces and Interfaces
General Chemistry
Condensed Matter Physics
Grain size
Surfaces, Coatings and Films
Amorphous solid
chemistry.chemical_compound
Ion implantation
chemistry
Sputtering
Transmission electron microscopy
Titanium disilicide
Grain boundary
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........dc49b450d888386c44de566ee68d15f7