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It was found that, although isovalent, Rh substituted for Ir in Sr$_2$IrO$_4$ may trap one electron inducing effective hole doping of Ir sites. Transport and thermoelectric measurements on Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$ single crystals presented here reveal the existence of an electron-like contribution to transport, in addition to the hole-doped one. As no electron band shows up in ARPES measurements, this points to the possibility that this hidden electron may delocalize in disordered clusters.

The crystallographic orientation of SrIrO3 surfaces is decisive for the occurrence of topological surface states. We show from DFT computations that (001) and (110) free surfaces have comparable energies, and, correspondingly, we experimentally observe that single micro-crystals exhibit both facet orientations. These surfaces are found to relax over typically the length of one oxygen octahedron, defining a structural critical thickness for thin films. A reconstruction of the electronic density associated to tilts of the oxygen octahedra is observed. On the other hand, thin films have invariably been reported to grow along the (110) direction. We show that the interfacial energy associated to the oxygen octahedra distortion for epitaxy is likely at the origin of this specific feature, and propose leads to induce (001) SrIrO3 growth.

In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2eV to 0.05eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr2IrO4 and conclude that the physics of the two families is essentially the same.

Oxygen was electrochemically intercalated into Sr$_2$IrO$_4$ sintered samples, single crystals and a thin film. We estimate the diffusion length to a few $\mu$m and the concentration of the intercalated oxygen to $\delta$ $\simeq$ 0.01. The latter is thus much smaller than for the cuprate and nickelate parent compounds, for which $\delta$ $>$ 0.1 is obtained, which could be a consequence of larger steric effects. The influence of the oxygen doping state on resistivity is small, indicating also a poor charge transfer to the conduction band. It is shown that electrochemical intercalation of oxygen may also contribute to doping, when gating thin films with ionic liquid in the presence of water.

We report on the synthesis of perovskite SrIrO3 thin films using sputtering technique. Single phase (110) oriented SrIrO$_3$ thin films were epitaxially grown on SrTiO3 (001) substrate. Using off-axis XRD $\theta-2\theta$ scans, we demonstrate that these films exhibit (110) out-of-plane orientation with (001) and (1-10) lying in-plane. The sputtering grown thin films have a smooth, homogeneous surface, and excellent coherent interface with the substrate., Comment: Corrected the peaks permutation in Fig. 4

Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature of the substrate cubic to tetragonal transition. Both observations result from the structural distortion associated to the epitaxial strain. The low-temperature and field dependences of the Hall number are interpreted as due to the contribution of Coulomb interactions to weak localization, evidencing the strong correlations in this material. The introduction of a contribution from magnetic scatters, in the analysis of magnetoconductance in the weakly localized regime, is proposed as an alternative to an anomalously large temperature dependence of the Land\'{e} coefficient.

The anisotropic magnetic properties of Sr$_2$IrO$_4$ are investigated, using longitudinal and torque magnetometry. The critical scaling across $T_c$ of the longitudinal magnetization is the one expected for the 2D XY universality class. Modeling the torque for a magnetic field in the basal-plane, and taking into account all in-plane and out-of-plane magnetic couplings, we derive the effective 4-fold anisotropy $K_4 \approx$ 1 10$^5$ erg mole$^{-1}$. Although larger than for the cuprates, it is found too small to account for a significant departure from the isotropic 2D XY model. The in-plane torque also allows us to put an upper bound for the anisotropy of a field-induced shift of the antiferromagnetic ordering temperature.

We show that, contrary to previous belief, the transition to the antiferromagnetic state of Sr$_2$IrO$_4$ in zero magnetic field does show up in the transverse resistivity. We attribute this to a change in transverse integrals associated to the magnetic ordering, which is evaluated considering hopping of the localized charge. The evolution of the resistivity anomaly associated to the magnetic transition under applied magnetic field is studied. It tracks the magnetic phase diagram, allowing to identify three different lines, notably the spin-flip line, associated with the reordering of the ferromagnetic component of the magnetization, and an intriguing line for field induced magnetism, also corroborated by magnetization measurements.

High-impedance contacts made on the surface of Sr$_{0.88}$La$_{0.12}$CuO$_2$ superconducting thin films systematically display a zero-bias anomaly. We consider two-level systems (TLS) as the origin of this anomaly. We observe that the contribution of some TLS to the contact resistance is weakened by a magnetic field. We show that this could result from the increase of the TLS relaxation rate in the superconducting state, due to its ability to create pairs of quasiparticles out of the condensate, when located close to the surface of the film.

We report on the spectra of point-contacts made on Sr$_{0.88}$La$_{0.12}$CuO$_2$ thin films. Besides a clear evidence for the superconducting gap, we discuss the origin of specific features, such as resistance peaks at the gap voltage and the occurrence of a two-steps resistance decrease., Comment: New data added

We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.

Signatures of antiferromagnetism (AF) in the underdoped Ln2-xCexCuO4 (Ln = Nd, Pr,...) family are observed even for doping levels for which superconductivity exists. We have looked for a similar property in a different electron-doped cuprate family, Sr1-xLaxCuO2, which consists of CuO2 planes separated by Sr/La atoms, and is exempt of the possible influence of magnetic rare earth ions. We report in-plane magnetoresistance measurements in the normal state of underdoped, superconducting, c-axis oriented, epitaxial Sr1-xLaxCuO2 thin films. This probe is sensitive to spin arrangement and we find that the in-plane magnetoresistance, which is negative and does not saturate for T, exhibits an angular dependence when measured upon rotating a magnetic field within the CuO2 planes. The analysis reveals a superposition of fourfold and twofold angular oscillations. Both of these increase in amplitude with increasing field and decreasing and appear below a temperature, which gets higher with decreasing doping levels. Our results demonstrate that these magnetoresistance oscillations, also observed for the Ln2-xCexCuO4 (Ln = Nd, Pr,...) family and attributed to an AF signature, are, without ambiguity, a property of CuO2 planes. Besides, these oscillations vary with doping in an unusual way compared to previous results: fourfold oscillations are essentially present in the more underdoped samples while only twofold oscillations are visible in the less underdoped ones. This intriguing observation appears to be a consequence of spin dilution with increasing doping level., Comment: 25 pages, 6 figures

The in-plane penetration depth of Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density deviates strongly from the s-wave behavior, suggesting, in analogy with other electron-doped cuprates, a contribution from a nodal hole pocket, or a small gap on the Fermi surface such as an anisotropic s-wave order parameter. The low value of the superfluid densities, likely due to a strong doping-induced disorder, places the superconducting transition of our samples in the phase-fluctuation regime.

We have investigated the transport properties of an insulating sub-micrometric YBa2Cu3O7-d bridge, patterned on a thin film. As expected for a variable-range-hopping insulator, transport is found non linear. The reduced dimension allows for the observation of an individual fluctuator generating random telegraph noise, which dynamics could be explored as a function of the temperature and transport current. Some recordings clearly exhibit three levels fluctuating resistance, with comparable level separation and correlated dynamics, which likely result from the existence of two states or correlated clustered charge traps.

We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been obtained by in-situ oxygen reduction. Transport measurements in the ab plane of these samples have been undertaken. We report original results on the temperature dependence of the Hall effect and on the anisotropic magnetoresistance (T > Tc). We discuss the magnitude of upper critical fields and anisotropy, the Hall effect, which presents changes of sign indicative of the existence of two types of carriers, the normal state magnetoresistance, negative in parallel magnetic field, a possible signature of spin scattering. These properties are compared to those of hole-doped cuprates, such as BiSr(La)CuO with comparable Tc., Comment: 4 pages, 4 figures; to appear in Proceedings of LT25, Journal of Physics : Conference Series

The time-averaged and low--frequency noise transport properties were investigated in the vicinity of the superconductor--insulator transition for a Bi$_2$Sr$_{2-x}$La$_{x}$CuO$_{6+\delta}$ ($x=0.3$) thin film. The results are consistent with a superconductor (metal) embedded in a strong insulator, the latter showing two-dimensional variable range hopping properties. The weak insulator behavior -- if any -- is attributed to the metallic inclusions only.

The resistance noise in a Bi_2Sr_2CaCu_2O$_{8+\delta}$ thin film is found to increase strongly in the underdoped regime. While the increase of the raw resistance noise with decreasing temperature appears to roughly track the previously reported pseudogap temperature for this material, standard noise analysis rather suggests that the additional noise contribution is driven by the proximity of the superconductor-insulator transition.

The in-plane resistivity and Hall coefficient have been measured for the single-layer compound Bi$_2$Sr$_2$CuO$_{6+\delta}$ for the whole range of doping states. The deviation of the Hall coefficient, $R_H$, from a high-temperature linear behavior and the temperature dependence of the Hall angle are both only weakly dependent upon doping, contrasting with Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ and Bi$_2$Sr$_2$CaCuO$_{8+\delta}$. This is in contradiction with former proposals that the transverse transport detects the formation of incoherent Cooper pairs in the pseudogap state. Conversely, the analysis of the data using a phenomenological angular dependent scattering rate clearly allows to distinguish between underdoped and overdoped states, and we propose that the maximum in $R_H(T)$ simply arises due to the combination of a large isotropic scattering rate and an anisotropic temperature dependent one.

The in-plane magnetoresistance of an epitaxial Bi$_2$Sr$_2$CuO$_{6+\delta}$ thin film was systematically investigated as a function of doping, above $T_c$. The orbital magnetoconductance is used to extract the crossover field line $H_{c2}^*(T)$ in the fluctuation regime. This field is found in good agreement with the upper critical field obtained from resistivity data below $T_c$, and exhibits a similar upward curvature, thus pointing toward the existence of a critical correlation length. The consequences regarding the nature of the resistive transition are discussed.

The current dependence of the excess conductivity is measured up to $\simeq 3 T_c$ for a Bi$_2$Sr$_2$CuO$_{6+\delta}$ thin film, as a function of doping. It is found to be anomalously sensitive to the transport current and to behave as a universal function of $T/T_c$ in the whole doping range. We discuss these results in the perspective of a granular superconductor with a gapless-like behavior.

The suppression of excess conductivity with electric field is studied for Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+x}$ ($n$ = 1, 2) thin films. A pulse-probe technique is used, which allows for an estimate of the sample temperature. The characteristic electric field for fluctuations suppression is found well below the expected value for all samples. For the $n=1$ material, a scaling of the excess conductivity with electric field and temperature is obtained, similar to the scaling under strong magnetic field.

The phase diagram of a driven two-dimensional vortex lattice in the presence of dense quasi-point pins is investigated. The transition from the crystal to the liquid is found continuous at intermediate inductions. The correlations in the pseudo random force that allow for an uncomplete unbinding of the dislocations is proposed as a key mechanism to account for the continuous transition., Comment: 7 pages, 8 figures

For five different Heisenberg spin glass systems, torque experiments were performed in applied magnetic fields up to $4 T$. The Dzyaloshinski-Moriya random anisotropy strengths, the in-field torque onset temperatures, and the torque relaxation were measured. Critical exponents were estimated independently using a standard protocol. The data are strong evidence for a true spin glass ordered state which survives under high applied magnetic fields; they can be interpreted consistently in terms of a chiral ordering model with replica symmetry breaking as proposed by Kawamura and coworkers., Comment: 4 pages 4 figures. Revised version accepted by PRL

The dynamic transition between the ordered flow and the plastic flow is studied for a two-dimensional driven vortex lattice, in the presence of sharp and dense pinning centers, from numerical simulations. For this system, which does not show smectic ordering, the lattice exhibits a first order transition from a crystal to a liquid, shortly followed by the dynamical transition to the plastic flow. The resistivity provides a critical order parameter for the latter, and critical exponents are determined in analogy with a percolation transition. At the boundary between a pinned region and an unpinned one, an anomalous layer is observed, where the vortices are more strongly pinned than in the bulk., Comment: 7 pages, 7 figures

The flux lattice driven by a uniform driving force in a superconductor with hot, strong, sharp and randomly distributed pinning centers, with applied magnetic field half the matching field is simulated. At low temperature both a non activated regime, where flux motion occurs within a robust percolative flux flow channel, and an activated regime are obtained depending on the sample preparation. These two regimes exhibit distinct resistivity and magnetic induction. In the non activated regime, a clear fingerprint is observed in the autocorrelation function of the longitudinal resitivity, which oscillates at a frequency close to the inverse lattice diffusion time., Comment: 6 figures

We present simulations of the dynamic critical state for a 2D superconductor with strong pinning centers, corresponding to a matching field twice the applied magnetic field. The sharp crossover between the plastic regime, at low current density and temperature, and the fluid flow regime for flux motion is characterized by the activation energy for flux motion and the transverse diffusion of the vortices trajectory., Comment: 7 pages, 7 figures. To be published in The European Physical Journal B. One reference added

Torque, torque relaxation, and magnetization measurements on a AuFe spin glass sample are reported. The experiments carried out up to 7 T show a transverse irreversibility line in the (H,T) plane up to high applied fields, and a distinct strong longitudinal irreversibility line at lower fields. The data demonstrate for that this type of sample, a Heisenberg spin glass with moderately strong anisotropy, the spin glass ordered state survives under high applied fields in contrast to predictions of certain "droplet" type scaling models. The overall phase diagram closely ressembles those of mean field or chiral models, which both have replica symmetry breaking transitions., Comment: 4 pages, 3 figures, accepted for PRL

We have measured an angle-dependent contribution to the equilibrium magnetization of a YBa_2Cu_3O_{7-d} single crystal with columnar defects created by 5.8GeV Pb ions. This contribution manifests itself as a jump in the equilibrium torque signal, when the magnetic field crosses that of the defects. The magnitude of the signal, which is observed in a narrow temperature interval less than 2K and for fields up to about twice the irradiation field, is used to estimate the the energy gained by vortex pinning on the defects. The vanishing of the effective pinning energy at a temperature below Tc is attributed to its renormalization by thermal fluctuations., Comment: 4 pages, 4 figures, submitted to Physical Review B additional comments on the interperation of the results