103 results on '"Frisina, F"'
Search Results
2. Power bipolar transistors with a fast recovery integrated diode
3. Three-dimensional concentration profiles of hybrid diffusers in crystalline silicon
4. Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment
5. Advances in the use of GABAergic interneurons for the treatment of epilepsy
6. Diffusion and lifetime engineering in silicon
7. Implants of aluminum into silicon
8. Oxidation of ion implanted silicon carbide
9. Structural characterisation of titanium silicon carbide reaction
10. High-gain photodetector of semiconductor material and manufacturing process thereof
11. Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device
12. Cosmic ray effects on power MOSFET
13. The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure
14. Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure
15. On the Characterization and Modeling of Power MOSFETS by Physics Based Simulations to Enhance the Device Design in Case of Low Voltage DC-DC Power Converters
16. A SPICE Behavioural Model of PowerMESH™ IGBTs
17. Design of a 600V Punch-through IGBT using local lifetime control. On-state voltage drop vs. turn-off time optimization
18. Analysis of Parallel Connected IGBTs Submitted to Fault Conditions in Inverter Applications
19. Current standard of care in patients affected by coronary heart disease in Italy: The MC'95 study
20. He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT
21. Induced Stresses on Silicon Die by the Molding Process: Experimental Investigation by Piezoresistive Elements in Case of Power Device Package
22. Thermal instability of low voltage power-MOSFET's
23. A New Pspice IGBT Model with Temperature Dependence in Active Behavior Applications
24. A New Macromodel of Punch Through IGBT Including the Temperature Effect on Parameters: Analysis and Validation
25. DIFFUSION AND ELECTRICAL BEHAVIOR OF AL IMPLANTED INTO CAPPED SI RID C-5307-2009
26. Modeling and Simulation of Low-Voltage MOSFETs Accounting for the Effect of the Gate Parasitic-RC Distribution
27. Design of IGBT with integral freewheeling diode
28. Short circuit transient behavior of IGBT devices in series connections
29. Effect of the epitaxial layer features on the reliability of medium blocking voltage power VDMOSFET during heavy ION exposure.
30. Thermal instability of low voltage power-MOSFETs
31. Enhanced oxidation of ion-damaged 6H-SiC
32. Radiation damage–He interaction in He implanted Si during bubble formation and their evolution in voids
33. Voids in silicon power devices
34. Innovative localized lifetime control in high-speed IGBTs
35. Characterization of oxide layers grown on implanted silicon
36. Electro-thermal instability in low voltage power MOS: Experimental characterization.
37. Diffusion and Electrical Behavior of Al Implanted into Capped Si
38. Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices
39. Power MOSFET macromodel accounting for temperature dependence: parameter extraction and simulation.
40. Physics based model of punch through IGBTs simulated by PSpice.
41. Comparative investigation on power losses in soft-switching insulated gate devices.
42. Gettering Mechanisms and Optimized Lifetime Control in Pt-Doped Silicon Power Devices.
43. A new power MOSFET model including the variation of parameters with the temperature.
44. Electron irradiation effects on power MOS transistors
45. Effect of the epitaxial layer features on the reliability of medium blocking voltage power VDMOSFET during heavy ion exposure
46. On the selection of IGBT devices in soft-switching applications
47. Physics based model of punch through IGBTs simulated by PSpice
48. Induced stresses on silicon die by the molding process: experimental
49. Electro-thermal instability in low voltage power MOS: Experimental characterization
50. A new PSpice power MOSFET model with temperature dependent parameters: evaluation of performances and comparison with available models
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.