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The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure

Authors :
Velardi, Francesco
Iannuzzo, Francesco
Busatto, Giovanni
Porzio, A.
Sanseverino, Annunziata
Curro', G.
Cascio, A.
Frisina, F.
Publication Year :
2004

Details

Database :
OpenAIRE
Accession number :
edsair.od......3980..0840c20c5af0bc93bbf3b41b77fb6fdb

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