126 results on '"Feigelson, Boris N."'
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2. Nanostructural effects beyond Hall-Petch: Towards superhard tungsten carbide
3. Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamond
4. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
5. Process Optimization for Selective Area Doping of GaN by Ion Implantation
6. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.
7. Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN.
8. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
9. Grain size effect on the mechanical properties of nanocrystalline magnesium aluminate spinel
10. Conformal coating of macroscopic nanoparticle compacts with ZnO via atomic layer deposition.
11. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
12. Novel Co‐doping Moiety to Achieve Enhanced P‐type doping in GaN by Ion Implantation
13. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
14. Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation.
15. Challenges to graphene growth on SiC(0 0 0 [formula omitted]): Substrate effects, hydrogen etching and growth ambient
16. An extended hardness limit in bulk nanoceramics
17. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing
18. Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates
19. Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
20. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres
21. Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation
22. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation
23. Polarity dependent implanted p-type dopant activation in GaN
24. Vertical power devices enabled by bulk GaN substrates
25. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices
26. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties.
27. Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation.
28. Below the Hall–Petch Limit in Nanocrystalline Ceramics
29. Vertical Power Devices Enabled by Bulk GaN Substrates.
30. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
31. Growth mode of alumina atomic layer deposition on nanopowders
32. Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride
33. Vertical GaN Junction Barrier Schottky Diodes
34. Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing
35. Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices
36. Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications.
37. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices.
38. Growth per cycle of alumina atomic layer deposition on nano- and micro-powders
39. Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
40. Characterization of an Mg‐implanted GaN p–i–n diode
41. Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates
42. Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
43. Characterization of a selective AlN wet etchant
44. Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN
45. Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing
46. Challenges to graphene growth on SiC(0 0 01‾): Substrate effects, hydrogen etching and growth ambient
47. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates
48. An Extended Hardness Limit in Bulk Nanoceramics
49. Comparison of AlN encapsulants for high-temperature GaN annealing
50. Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN
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