19 results on '"Fei, Xin-Xing"'
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2. Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse
3. Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction
4. Simulation study of single-event burnout in hardened GaN MISFET
5. TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes
6. Research of single-event burnout and hardened GaN MISFET with embedded PN junction
7. Potential study of the enhanced breakdown voltage GaN MISFET based on partial AlN buried layer
8. A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer
9. Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
10. Novel Layout Design of 4H-SiC Merged PiN Schottky Diodes Leading to Improved Surge Robustness
11. Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes
12. Design of a Broadband HTCC SIP Packaging Module
13. Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element
14. Simulation study of high voltage GaN MISFETs with embedded PN junction
15. TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer
16. Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET
17. TCAD Simulation of Breakdown-Enhanced AlGaN-/GaN-Based MISFET With Electrode-Connected p-i-n Diode in Buffer Layer
18. Simulation Study of Single-Event Burnout in Power Trench ACCUFETs
19. Near-infrared spectroscopy in schizophrenia: A bibliometric perspective.
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