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1. Building Communities Through Digital Data Sharing

2. Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

3. Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

5. Use of a maturity model for facilitating the introduction of CAR T-cell therapy—Results of the START CAR-T project

7. 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

9. Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

11. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction

13. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

14. Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives

15. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

16. Degradation physics of GaN-based lateral and vertical devices

17. Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

20. Degradation physics of GaN-based lateral and vertical devices

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