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1. Electronic Properties of Electroactive Ferrocenyl-Functionalized MoS2

Author

Lê, Trung Nghia Nguyên, Kondratenko, Kirill, Arbouch, Imane, Moréac, Alain, Breton, d Jean-Christophe Le, van Dyck, Colin, Cornil, Jérôme, Vuillaume, Dominique, and Fabre, Bruno

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport properties by the redox state of the grafted molecule and thus the applied electrical potential. In this work, defective plasma treated MoS2 is functionalized by a ferrocene derivative and thoroughly investigated by various characterization techniques, such as Raman, photoluminescence, X-ray photoelectron spectroscopies, atomic force microscopy (AFM) and electrochemistry. Furthermore, in-plane and out-of-plane conductive-AFM measurements (I-V and first derivative dI/dV-V curves) are measured to investigate the effect of the chemical functionalization of MoS2 on the electron transport properties. While the conduction and valence bands are determined at +0.7 and -1.2 eV with respect of the electrode Fermi energy for pristineMoS2, additional states in an energy range of ca. 0.45 eV below the MoS2 conduction band are measured after plasma treatment, attributed to S-vacancies. For ferrocene functionalized MoS2, the S-vacancy states are no longer observed resulting from the defect healing. However, two bumps at lower voltages in the dI/dV-V indicate a contribution to the electron transport through ferrocene HOMO, which is located in the MoS2 band gap at ca. 0.4-0.6 eV below the Fermi energy. These results are in good agreement with theoretical density functional theory (DFT) calculations and UV photoelectron spectroscopy (UPS) measurements., Comment: Full manuscript with figures and supporting information

Published
2024
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9. Electronic Properties of Electroactive Ferrocenyl-Functionalized MoS2

Author

Nguye^n Le^, Trung Nghia, Kondratenko, Kirill, Arbouch, Imane, More´ac, Alain, Breton, Jean-Christophe Le, van Dyck, Colin, Cornil, Je´ro^me, Vuillaume, Dominique, and Fabre, Bruno

Abstract

The attachment of redox-active molecules to transition metal dichalcogenides, such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material’s charge/spin transport properties by the redox state of the grafted molecule and thus the applied electrical potential. In this work, defective plasma-treated MoS2is functionalized by a ferrocene derivative and thoroughly investigated by various characterization techniques, such as Raman, photoluminescence, and X-ray photoelectron spectroscopies; atomic force microscopy (AFM); and electrochemistry. Furthermore, in-plane and out-of-plane conductive AFM measurements (I–Vand first derivative ?I/?V–Vcurves) are measured to investigate the effect of the chemical functionalization of MoS2on the electron transport properties. While the conduction and valence bands are determined at +0.7 and -1.2 eV with respect to the electrode’s Fermi energy for pristine MoS2, additional states in an energy range of ˜0.45 eV below the MoS2conduction band are measured after plasma treatment, attributed to S-vacancies. For ferrocene-functionalized MoS2, the S-vacancy states are no longer observed, resulting from the defect healing. However, two bumps at lower voltages in the ?I/?V–Vindicate a contribution to electron transport through ferrocene’s highest occupied molecular orbital, which is located in the MoS2band gap at ˜0.4/0.6 eV below the Fermi energy. These results are in good agreement with theoretical density functional theory calculations and UV photoelectron spectroscopy measurements.

Published
2024
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10. On the Abel-Radon transform of locally residual currents

Author

Fabre, Bruno

Subjects
Mathematics - Complex Variables, 32C15, 32C30
Abstract

First we recall the definition of locally residual currents and their basic properties. We prove in this first section a trace theorem, that we use later. Then we define the Abel-Radon transform of a current ${\cal R}(\alpha)$, on a projective variety $X\subset \P^N$, for a family of $p-$cycles of incidence variety $I\subset T\times X$, for which $p_1:I\to T$ is proper and $p_2:I\to X$ is submersive, and a domain $U\subset T$. Then we show the following theorem, for a family of sections of $X$ with $r-$planes (which was proved for the family of lines of $X=\P^N$ by the author for $p=1$, for ${\cal R}(\alpha)=0$ and $p-$planes for any $q>0$, and by Henkin and Passare for $p-$planes in $\P^N$ and integration currents $\alpha=\omega\wedge[Y]$, with a meromorphic $q-$form $\omega$, and projective convexity on $\tilde U$): Let $\alpha$ be a locally residual current of bidegree $(q+p,p)$ on $U^*$, with $U^*:=\cup_{t\in U}{H_t}\subset X$, where ${t}\times H_t:=p_1^{-1}(t)$. Then ${\cal R}(\alpha)$ is a meromorphic $q-$form on $U$, holomorphic iff $\alpha$ is $\bar{\partial}-$closed. Let us assume that $\alpha$ is $\bar\partial-$closed, and $q>0$. If ${\cal R}(\alpha)$ extends meromorphically (resp. holomorphically) to a greater domain $\tilde U$, then $\alpha$ extends in a unique way as a locally residual current (resp. $\bar\partial-$closed) to the greater domain ${\tilde U}^*\subset X$., Comment: 11 pages

Published
2010

11. Robust and Bifunctional Electrodeposited NiCoCr Ternary Alloy for Alkaline Water Electrolysis.

Author

Tourneur, Jeoffrey, Lagrost, Corinne, and Fabre, Bruno

Subjects
TERNARY alloys, WATER electrolysis, OXYGEN evolution reactions, BINARY metallic systems, X-ray photoelectron spectroscopy
Abstract

Electrodeposited NiCoCr ternary alloy is explored as a cost‐effective and Earth‐abundant alternative electrocatalyst for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in alkaline conditions. Different metal salt concentrations (between 10 and 100 mM) and cathodic current densities (between 75 and 225 mA cm−2) are tested to prepare an optimized material exhibiting both the best electrocatalytic efficiency and robustness for water splitting. Combining electrochemistry with complementary physicochemical characterizations (scanning electron microscopy, energy‐dispersive X‐ray spectroscopy analysis, and X‐ray photoelectron spectroscopy) has enabled to gain a deep knowledge of the composition, morphology, and catalytic activity before and after long‐term electrolytic tests. Compared with the related NiCo and NiCr binary alloys, NiCoCr shows catalytic performance for HER similar to NiCr and higher than that of NiCo. In contrast, its catalytic activity for OER is quite comparable to that of NiCo and higher than that of NiCr. Importantly, the presence of Cr is found to be beneficial to increase the oxidation resistance of the ternary alloy. This work provides a scalable way to produce bifunctional and robust electrode materials. [ABSTRACT FROM AUTHOR]

Published
2024
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14. On the Dolbeault cohomology of projective varieties and locally residual currents

Author

Fabre, Bruno

Subjects
Mathematics - Algebraic Geometry, 14H05
Abstract

Let $X$ be a projective manifold. Let $Y_1,...,Y_{p+1}$ be $p+1$ ample hypersurfaces in complete intersection position on $X$, each defined by the global section of an ample Cartier divisor. We show in this note that for $i\le p+1$, the cohomology groups $H^i(\Omega^q)$ can be computed as the $i-$th cohomology groups of some complex of global sections of locally residual currents on $X$. We could also compute the cohomology of the subsheaves ${\tilde\Omega}^q\subset \Omega^q$ of $\partial-$closed holomorphic forms by the corresponding subsheaves of $\partial-$closed locally residual currents. We deduce like this that any cohomology class of bidegree $(i,i)$ has an element which is a $d-$closed locally residual current with support in $Y_1\cap >...\cap Y_i$. We also show that any locally residual current $T$ of bidegree $(q,i-1)$ with support in $Y_1\cap ... Y_{i-1}$ can be written as a global residue $T=Res_{Y_1,...,Y_{i-1}}{\Psi}$ of some meromorphic form with pole in $Y_1\cup...\cup Y_{i}$. We can avoid $Y_{i}$ iff the current in $\bar\partial-$exact; we deduce as corollaries a theorem of Hererra-Dickenstein-Sessa. We give as a conclusion a new formulation of the Hodge conjecture., Comment: A preliminiary version of a future paper, maybe with Sebastien Boucksom

Published
2005

15. On Abel-Radon transform of locally residual currents

Author

Fabre, Bruno

Subjects
Mathematics - Complex Variables, Mathematics - Functional Analysis, 32C30, 44A12
Abstract

We give in this note a generalisation of the following theorem of Henkin and Passare : Let be Y an analytic subvariety of pure codimension p in a linearly p-concave domain U, and w a meromorphic q-form (q>0) on Y; if the Abel transform of w, which is meromorphic on U*, has a meromorphic prolongation to some greater domain U' * containing U^*, then Y extends as an analytic subvariety Y' of U', and w as a meromorphic form on Y'. We show the analogous statement when we replace the Abel transform of w by the Abel-Radon transform of a locally residual current on U., Comment: 26 pages

Published
2004

18. Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates.

Author

Piriyev, Mekan, Loget, Gabriel, Léger, Yoan, Le, Hanh Vi, Chen, Lipin, Létoublon, Antoine, Rohel, Tony, Levallois, Christophe, Le Pouliquen, Julie, Fabre, Bruno, Bertru, Nicolas, and Cornet, Charles

Abstract

In this work, we demonstrate how the classical concept of band gap engineering usually used in III–V semiconductor devices can be extended to the engineering of the band lineup between semiconducting photoelectrodes and electrolytes. The performances of photoelectrodes made of GaP1−xAsx epilayers in the full compositional range and grown on low-cost Si substrates were studied and compared with those of photoelectrodes grown on GaAs and GaP substrates. We first show that the changes of incident photon to current conversion efficiency (IPCE) with the As content in GaP1−xAsx alloys are related to the band gap nature (direct or indirect) and band gap energy variations. Then, from flat band potential measurements during Mott–Schottky experiments, valence and conduction band energies of GaP1−xAsx alloys are positioned versus the reversible hydrogen potential. A weak change of conduction band energies and a large evolution of valence band energies are obtained, in good agreement with expected theoretical trends. Such results show that both band gaps and semiconductor/electrolyte band lineups can be engineered through alloying of III–V semiconductors deposited on silicon substrates. This band lineup engineering strategy is expected to be of great interest to address specific redox reactions in the electrolyte, provided that suitable protecting or passivating layers can be used to limit surface/interface recombinations. [ABSTRACT FROM AUTHOR]

Published
2024
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19. Stable Organic Radical for Enhancing Metal–Monolayer–Semiconductor Junction Performance

Author

Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Ciencia e Innovación (España), Generalitat de Catalunya, Consejo Superior de Investigaciones Científicas (España), Sousa, J. Alejandro de, Pfattner, Raphael, Gutiérrez Yatacue, Diego F., Jutglar, Kilian, Bromley, Stefan T., Veciana, Jaume, Rovira, Concepció, Mas Torrent, Marta, Fabre, Bruno, Crivillers, Núria, Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Ciencia e Innovación (España), Generalitat de Catalunya, Consejo Superior de Investigaciones Científicas (España), Sousa, J. Alejandro de, Pfattner, Raphael, Gutiérrez Yatacue, Diego F., Jutglar, Kilian, Bromley, Stefan T., Veciana, Jaume, Rovira, Concepció, Mas Torrent, Marta, Fabre, Bruno, and Crivillers, Núria

Abstract

The preparation of monolayers based on an organic radical and its diamagnetic counterpart has been pursued on hydrogen-terminated silicon surfaces. The functional monolayers have been investigated as solid-state metal/monolayer/semiconductor (MmS) junctions showing a characteristic diode behavior which is tuned by the electronic characteristics of the organic molecule. The eutectic gallium–indium liquid metal is used as a top electrode to perform the transport measurements and the results clearly indicate that the SOMO–SUMO molecular orbitals impact the device performance. The junction incorporating the radical shows an almost two orders of magnitude higher rectification ratio (R(|J1V/J–1V|) = 104.04) in comparison with the nonradical one (R(|J1V/J–1V|) = 102.30). The high stability of the fabricated MmS allows the system to be interrogated under irradiation, evidencing that at the wavelength where the photon energy is close to the band gap of the radical there is a clear enhancement of the photoresponse. This is translated into an increase of the photosensitivity (Sph) value from 68.7 to 269.0 mA/W for the nonradical and radical based systems, respectively.

Published
2023

22. Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.

Author

Piriyev, Mekan, primary, Loget, Gabriel, additional, Leger, Yoan, additional, Le, Vi Hanh, additional, Chen, Lipin, additional, Letoublon, Antoine, additional, Rohel, Tony, additional, Levallois, Christophe, additional, Le Pouliquen, Julie, additional, Fabre, Bruno, additional, Bertru, Nicolas, additional, and Cornet, Charles, additional

Published
2023
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23. Carbon-Embedded Tungsten Carbide Electrocatalysts Derived from Self-Deposited Tungsten Oxide for the pH-Universal Hydrogen Evolution Reaction

Author

Tyagi, Chinkit, Lagrost, Corinne, Dorcet, Vincent, Tessier, Franck, Fabre, Bruno, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Synthèse Caractérisation Analyse de la Matière (ScanMAT), Université de Rennes (UR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Bruno Fabre and Chinkit Tyagi acknowledge the Centre national de la recherche scientifique (CNRS) for the research funding and PhD research grant (80|Prime program).

Subjects
electrocatalysis, [CHIM]Chemical Sciences, water splitting, tungsten carbides, nickelfoam, hydrogen evolution reaction
Abstract

International audience; Tungsten carbide (WC) has been exploredas a cost-effectiveandEarth-abundant alternative electrocatalyst for the hydrogen evolutionreaction (HER) in both acid and alkaline conditions, due to its electronicstructure comparable to that of platinum. Herein, we report on a simpleand convenient approach for depositing the carbon-embedded WC electrocatalyston nickel foam from the thermal reduction of a sucrose-impregnatedself-deposited tungsten trioxide (WO3) precursor. Differentsucrose concentrations (between 20 and 80% aqueous solution) and reductiontemperatures (between 600 and 1000 degrees C) are tested to achievean optimized material exhibiting the best electrocatalytic efficiencyfor HER. The optimized material is obtained from the precursor impregnatedwith 50% sucrose and thermally reduced at 800 degrees C. It can operateHER with overpotential values measured at 10 and 100 mA cm(-2) of 0.124 and 0.232 V, respectively, at pH 14, and 0.208 and 0.333V at pH 0.3, respectively. Furthermore, these electrodes are foundto be stable in both media during controlled-current density electrolysistests over a period of 40 h. The presence of excess amorphous carbonembedding WC is beneficial to improve the conductivity and dispersibilityof the electrocatalyst and consequently its HER activity. These findingsdemonstrate that robust and efficient WC-based binder-free HER electrocatalystscan be produced easily from spontaneously deposited WO3 film and sucrose as the carbon source.

Published
2023

24. MBE-grown GaAs on a low-cost Si substrate for solar hydrogen production

Author

Vi, Hanh, Piriyev, Mekan, Loget, Gabriel, Fabre, Bruno, Rohel, Tony, Létoublon, Antoine, Levallois, Christophe, Tavernier, Karine, Léger, Yoan, Bertru, Nicolas, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and European Materials Research Society

Subjects
[CHIM.CATA]Chemical Sciences/Catalysis, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2022

25. Approche expérimentale de l’élasticité d’ordre supérieur par la diffraction de rayons X mous

Author

Chaalane, Amar, Cherioux, Frédéric, Joseph, Eric, Jaouen, Nicolas, Popescu, Horia, Fabre, Bruno, Amiot, Fabien, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Synchrotron SOLEIL (Synchrotron SOLEIL), Université de Rennes (UR), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.MECA]Physics [physics]/Mechanics [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Il est bien établi que la réduction de la taille des structures mécaniques rend leur rapport surface/volume beaucoup plus important que pour les objets habituels, de sorte que leur capacité à interagir avec leur environnement est considérablement augmentée. Ce phénomène a été particulièrement utilisé dans le développement des capteurs micromécaniques, où un changement d’énergie de surface sur un côté d’une

Published
2022

27. Tunable bandgap III-V alloys on a low-cost Si substrate for solar-assisted water splitting

Author

Piriyev, Mekan, Le, Hanh Vi, Léger, Yoan, Loget, Gabriel, Levallois, Christophe, Rohel, Tony, Létoublon, Antoine, Fabre, Bruno, Bertru, Nicolas, Cornet, Charles, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.CATA]Chemical Sciences/Catalysis, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2022

28. Approaching second-strain gradient elasticity with soft X-rays diffraction

Author

Chaalane, Amar, Cherioux, Frédéric, Joseph, Eric, Jaouen, Nicolas, Popescu, Horia, Fabre, Bruno, Amiot, Fabien, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Synchrotron SOLEIL (Synchrotron SOLEIL), Université de Rennes (UR), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.MECA]Physics [physics]/Mechanics [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; It is well established that downsizing mechanical structures make their surface-over-volume ratio much larger than for usual objects, so that their ability to interact with their environment is significantly augmented. This has been particularly used in the development of cantilever sensors, where a surface energy change on one side induces the cantilever’s bending. Even though this phenomenon has been implemented for a wide range of molecules, the modeling the mechanical response of a micromechanical structure to a surface energy change has been scarcely investigated. Secondstrain gradient elasticity [1] has been shown to naturally involve the equivalent of surface tension for solids, and thus seems particularly suited to model the deformation of solids subjected to a surface energy change. The constitutive law is however rather complex, so that the experimental identification of the constitutive parameters is a challenge to overcome. First results from an original approach are reported herein. Beams made of a material driven by second-strain gradient elasticity are expected to display short-wavelength sinusoidal components in their displacement field. Depending on the material, the bending response is expected to display up to 3 sinusoidal

Published
2022

33. Hétéro-épitaxie III-V/Si : contrôle des propriétés des surfaces et interfaces pour la photo-électrochimie

Author

Cornet, Charles, Chen, Lipin, Piriyev, Mekan, Loget, Gabriel, Fabre, Bruno, Patriarche, Gilles, Léger, Yoan, Beck, Alexandre, Ponchet, Anne, Skibitzki, Oliver, Turban, Pascal, Schieffer, Philippe, Pedesseau, Laurent, Even, Jacky, Bertru, Nicolas, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), ANR-21-CE09-0020,PIANIST,Propriétés physiques de matériaux hybrides semi-métal/semi-conducteur III-V/Si(2021), and ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014)

Subjects
[PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CATA]Chemical Sciences/Catalysis, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience; L’intégration monolithique de semi-conducteurs III-V sur substrat de Si a de nombreux avantages dans le domaine de la photonique, de l’électronique, ou de l’énergie. Dans cet exposé, nous montrerons tout d’abord le rôle fondamental des surfaces et interfaces et de leur structure atomique lors de la croissance III-V sur Si. Nous montrerons ensuite que les parois d’antiphase créées lors de la croissance cristalline se comportent comme des singularités 2D avec des propriétés de confinement de porteurs et de phonons originales. Enfin, nous montrerons comment ces singularités peuvent dans certains cas se comporter comme des inclusions semi-métalliques, et comment il est possible de s’en servir pour la production d’hydrogène solaire.

Published
2022

34. Exploiting the versatile alkyne-based chemistry for expanding the applications of a stable triphenylmethyl organic radical on surfaces† †Electronic supplementary information (ESI) available: Synthetic details and characterization of the prepared compounds, details of the preparation of SAMs on Si–H and on Au, additional electrochemical characterization of SAMs, survey and XPS spectra of SAM-3-Rad and SAM-2-Rad together with their stoichiometric and experimental elemental ratios and instrumentation. See DOI: 10.1039/c9sc04499j

Author

de Sousa, J. Alejandro, Bejarano, Francesc, Gutiérrez, Diego, Leroux, Yann R., Nowik-Boltyk, Ewa Malgorzata, Junghoefer, Tobias, Giangrisostomi, Erika, Ovsyannikov, Ruslan, Casu, Maria Benedetta, Veciana, Jaume, Mas-Torrent, Marta, Fabre, Bruno, Rovira, Concepció, and Crivillers, Núria

Subjects
Chemistry
Abstract

Triphenylmethyl organic radicals functionalized with terminal alkyne groups open new avenues for their implementation as multifunctional surfaces., The incorporation of terminal alkynes into the chemical structure of persistent organic perchlorotriphenylmethyl (PTM) radicals provides new chemical tools to expand their potential applications. In this work, this is demonstrated by the chemical functionalization of two types of substrates, hydrogenated SiO2-free silicon (Si–H) and gold, and, by exploiting the click chemistry, scarcely used with organic radicals, to synthesise multifunctional systems. On one hand, the one-step functionalization of Si–H allows a light-triggered capacitance switch to be successfully achieved under electrochemical conditions. On the other hand, the click reaction between the alkyne-terminated PTM radical and a ferrocene azide derivative, used here as a model azide system, leads to a multistate electrochemical switch. The successful post-surface modification makes the self-assembled monolayers reported here an appealing platform to synthesise multifunctional systems grafted on surfaces.

Published
2019

35. Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronics

Author

Cornet, Charles, Chen, Lipin, Piriyev, Mekan, Rodriguez, Jean-Baptiste, Loget, Gabriel, Fabre, Bruno, Cerutti, Laurent, Patriarche, Gilles, Léger, Yoan, Beck, Alexandre, Turban, Pascal, Schieffer, Philippe, Levallois, Christophe, Pedesseau, Laurent, Even, Jacky, Tournié, Eric, Bertru, Nicolas, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Matériaux (MAT), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Institut des Sciences Chimiques de Rennes (ISCR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Photonique et Ondes (PO), The authors acknowledge the French National Research Agency for funding through the ANR project PIANIST (ANR-21-CE09-0020), the French program on Investment for the Future (ANR-11-EQPX-0016), Rennes Métropole through the 'REMOTE' project and the H2020 program of the European Union (GA 780240). This work received support from the RENATECH network for part of the transmission electron microscopy studies and within NanoRennes for technological support. DFT calculations were performed at Institut FOTON and the work was granted access to the HPC resources of TGCC/CINES/IDRIS under the allocation 2020-A0080911434 and 2021-A0100911434 made by GENCI, VEBLEO international organization, ANR-21-CE09-0020,PIANIST,Propriétés physiques de matériaux hybrides semi-métal/semi-conducteur III-V/Si(2021), and ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011)

Subjects
[PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

37. Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties

Author

Chen, Lipin, primary, Léger, Yoan, additional, Loget, Gabriel, additional, Piriyev, Mekan, additional, Jadli, Imen, additional, Tricot, Sylvain, additional, Rohel, Tony, additional, Bernard, Rozenn, additional, Beck, Alexandre, additional, Le Pouliquen, Julie, additional, Turban, Pascal, additional, Schieffer, Philippe, additional, Levallois, Christophe, additional, Fabre, Bruno, additional, Pedesseau, Laurent, additional, Even, Jacky, additional, Bertru, Nicolas, additional, and Cornet, Charles, additional

Published
2021
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38. III-V/Si photoelectrodes with ambipolar properties

Author

Chen, Lipin, Léger, Yoan, Loget, Gabriel, Piriyev, Mekan, Jadli, Imen, Tricot, Sylvain, Rohel, Tony, Bernard, Rozenn, Beck, Alexandre, Le Pouliquen, Julie, Turban, Pascal, Schieffer, Philippe, Levallois, Christophe, Fabre, Bruno, Pedesseau, Laurent, Even, Jacky, Bertru, Nicolas, Cornet, Charles, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2021

39. Bandgap engineering of III-V semiconductors on silicon for solar hydrogen production

Author

Piriyev, Mekan, Chen, Lipin, Léger, Yoan, Rohel, Tony, Létoublon, Antoine, Loget, Gabriel, Fabre, Bruno, Bertru, Nicolas, Cornet, Charles, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2021

40. III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production

Author

Chen, Lipin, Léger, Yoan, Loget, Gabriel, Piriyev, Mekan, Jadli, Imen, Tricot, Sylvain, Rohel, Tony, Bernard, Rozenn, Beck, Alexandre, Le Pouliquen, Julie, Turban, Pascal, Schieffer, Philippe, Levallois, Christophe, Fabre, Bruno, Pedesseau, Laurent, Even, Jacky, Bertru, Nicolas, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Renatech +, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), and Cornet, Charles

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

41. MBE-grown GaAs(x)P(1-x)/Si photoelectrodes for solar hydrogen production

Author

Piriyev, Mekan, Chen, Lipin, Léger, Yoan, Levallois, Christophe, Rohel, Tony, Létoublon, Antoine, Loget, Gabriel, Fabre, Bruno, Bertru, Nicolas, Cornet, Charles, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

42. Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting

Author

Chen, Lipin, Léger, Yoan, Loget, Gabriel, Piriyev, Mekan, Jadli, Imen, Tricot, Sylvain, Rohel, Tony, Bernard, Rozenn, Beck, Alexandre, Le Pouliquen, Julie, Turban, Pascal, Schieffer, Philippe, Levallois, Christophe, Fabre, Bruno, Pedesseau, Laurent, Even, Jacky, Bertru, Nicolas, Cornet, Charles, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2021

45. Performances of III-P/Si based photoelectrodes for solar hydrogen production

Author

Chen, Lipin, Piriyev, Mekan, Létoublon, Antoine, Durand, Olivier, Pedesseau, Laurent, Léger, Yoan, Loget, Gabriel, Fabre, Bruno, Bertru, Nicolas, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2021

46. La Porte des rêves (1899) et l'art nouveau

Author

Lhermitte, Agnès, Fabre, Bruno, Cultures, Littératures, Arts, Représentations, Esthétiques (CLARE), Université Bordeaux Montaigne, Hélène Campaignolle-Catel, Sophie Lesiewicz, Gaëlle Théval - Université Paris 3-Sorbonne Nouvelle - Bibliothèque littéraire jacques Doucet, and Hélène Campaignolle-Catel, Sophie Lesiewicz et Gaëlle Théval

Subjects
[SHS.LITT]Humanities and Social Sciences/Literature, [SHS.ART]Humanities and Social Sciences/Art and art history, ComputingMilieux_MISCELLANEOUS, Illustration d'ouvrages - typographie, [SHS]Humanities and Social Sciences
Abstract

International audience

Published
2020

48. GaPSb/Si tandem material with APBs for efficient overall water splitting

Author

Chen, Lipin, Alqahtani, Mahdi, Levallois, Christophe, Létoublon, Antoine, Le Pouliquen, Julie, Piron, Rozenn, Boyer-Richard, S., Pedesseau, Laurent, Rohel, Tony, Bernard, Rozenn, Léger, Yoan, Loget, Gabriel, Wu, Jiang, Parkin, Ivan, Fabre, Bruno, Bertru, Nicolas, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), University College of London [London] (UCL), Institut des Sciences Chimiques de Rennes (ISCR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CATA]Chemical Sciences/Catalysis, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2020

49. Exploiting the versatile alkyne-based chemistry for expanding the applications of a stable triphenylmethyl organic radical on surfaces

Author

Ministerio de Economía y Competitividad (España), Generalitat de Catalunya, Consejo Superior de Investigaciones Científicas (España), Centro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España), German Research Foundation, Helmholtz-Zentrum Berlin for Materials and Energy, Sousa, J. Alejandro de, Bejarano, Francesc, Gutiérrez Yatacue, Diego F., Leroux, Yann R., Nowik-Boltyk, Ewa Malgorzata, Junghoefer, Tobias, Giangrisostomi, Erika, Ovsyannikov, Ruslan, Casu, Maria Benedetta, Veciana, Jaume, Mas Torrent, Marta, Fabre, Bruno, Rovira, Concepció, Crivillers, Núria, Ministerio de Economía y Competitividad (España), Generalitat de Catalunya, Consejo Superior de Investigaciones Científicas (España), Centro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España), German Research Foundation, Helmholtz-Zentrum Berlin for Materials and Energy, Sousa, J. Alejandro de, Bejarano, Francesc, Gutiérrez Yatacue, Diego F., Leroux, Yann R., Nowik-Boltyk, Ewa Malgorzata, Junghoefer, Tobias, Giangrisostomi, Erika, Ovsyannikov, Ruslan, Casu, Maria Benedetta, Veciana, Jaume, Mas Torrent, Marta, Fabre, Bruno, Rovira, Concepció, and Crivillers, Núria

Abstract

The incorporation of terminal alkynes into the chemical structure of persistent organic perchlorotriphenylmethyl (PTM) radicals provides new chemical tools to expand their potential applications. In this work, this is demonstrated by the chemical functionalization of two types of substrates, hydrogenated SiO2-free silicon (Si–H) and gold, and, by exploiting the click chemistry, scarcely used with organic radicals, to synthesise multifunctional systems. On one hand, the one-step functionalization of Si–H allows a light-triggered capacitance switch to be successfully achieved under electrochemical conditions. On the other hand, the click reaction between the alkyne-terminated PTM radical and a ferrocene azide derivative, used here as a model azide system, leads to a multistate electrochemical switch. The successful post-surface modification makes the self-assembled monolayers reported here an appealing platform to synthesise multifunctional systems grafted on surfaces.

Published
2020

50. Scanning electrochemical microscopy investigations of monolayers bound to p-type silicon substrates

Author

Ghilane, Jalal, Hauquier, Fanny, Fabre, Bruno, and Hapiot, Philippe

Subjects
Monomolecular films -- Chemical properties, Electrochemistry -- Research, Scanning electron microscopes -- Observations, Silicon compounds -- Chemical properties, Chemistry
Abstract

p-Si type electrodes modified with different organic monolayers were investigated by reaction with radical anion and cation electrogenerated at a microelectrode operating in the configuration of a scanning electrochemical microscope. The method proves to be a convenient tool for investigating both the quality and the redox properties of the layer as previously demonstrated on metallic electrodes especially when the sample cannot be electrically connected. Approach curves recorded with the different mediators were used to investigate the electron-transfer rates across alkyl monolayers bound to p-type silicon substrates. Preliminary results indicate that the interfacial electron transfer occurs via electron tunneling through the organic layer as generally described for SAMs grafted on gold electrodes.

Published
2006

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