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Electronic Properties of Electroactive Ferrocenyl-Functionalized MoS2
- Source :
- The Journal of Physical Chemistry - Part C; May 2024, Vol. 128 Issue: 18 p7706-7722, 17p
- Publication Year :
- 2024
-
Abstract
- The attachment of redox-active molecules to transition metal dichalcogenides, such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material’s charge/spin transport properties by the redox state of the grafted molecule and thus the applied electrical potential. In this work, defective plasma-treated MoS2is functionalized by a ferrocene derivative and thoroughly investigated by various characterization techniques, such as Raman, photoluminescence, and X-ray photoelectron spectroscopies; atomic force microscopy (AFM); and electrochemistry. Furthermore, in-plane and out-of-plane conductive AFM measurements (I–Vand first derivative ?I/?V–Vcurves) are measured to investigate the effect of the chemical functionalization of MoS2on the electron transport properties. While the conduction and valence bands are determined at +0.7 and -1.2 eV with respect to the electrode’s Fermi energy for pristine MoS2, additional states in an energy range of ˜0.45 eV below the MoS2conduction band are measured after plasma treatment, attributed to S-vacancies. For ferrocene-functionalized MoS2, the S-vacancy states are no longer observed, resulting from the defect healing. However, two bumps at lower voltages in the ?I/?V–Vindicate a contribution to electron transport through ferrocene’s highest occupied molecular orbital, which is located in the MoS2band gap at ˜0.4/0.6 eV below the Fermi energy. These results are in good agreement with theoretical density functional theory calculations and UV photoelectron spectroscopy measurements.
Details
- Language :
- English
- ISSN :
- 19327447 and 19327455
- Volume :
- 128
- Issue :
- 18
- Database :
- Supplemental Index
- Journal :
- The Journal of Physical Chemistry - Part C
- Publication Type :
- Periodical
- Accession number :
- ejs66966868
- Full Text :
- https://doi.org/10.1021/acs.jpcc.4c00606