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2. Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory.

3. REDUCING THE ENERGY CONSUMPTION OF SYSTEMS WITH THE INTEGRATED CIRCUIT TI 430FR2433.

4. Modification of energy band alignment and electric properties of Pt/Ba0.6Sr0.4TiO3/Pt thin-film ferroelectric varactors by Ag impurities at interfaces.

5. Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes.

6. Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices.

7. Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol.

8. Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament.

9. Effect of ferroelectric parameters on ferroelectric diodes.

10. Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials.

11. Nanosecond in situ transmission electron microscope studies of the reversible Ge2Sb2Te5 crystalline ⇔ amorphous phase transformation.

12. Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure.

13. Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism.

14. Metal oxide resistive memory switching mechanism based on conductive filament properties.

15. Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer.

16. A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure.

17. Resistive switching characteristics and mechanism of thermally grown WOx thin films.

18. Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations.

19. Electronic and optical switching of solution-phase deposited SnSe2 phase change memory material.

20. Diode and photocurrent effect in ferroelectric BaTiO3-δ.

21. Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale.

22. Multilevel resistive switching in Ti/CuxO/Pt memory devices.

23. Structural and electrical characteristics of high-k Tb2O3 and Tb2TiO5 charge trapping layers for nonvolatile memory applications.

24. Conductive path formation in glasses of phase change memory.

25. dc and high frequency magnetic properties of nanopatterned CoFe2O4 arrays fabricated using sol-gel precursors.

26. Atomic structure of amorphous and crystallized Ge15Sb85.

27. Atomic structure of amorphous and crystallized Ge15Sb85.

28. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties.

29. Role of oxygen vacancies on relaxation and conduction behavior of KNbO3 ceramic.

30. Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers.

31. Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory.

32. A theory of triple hysteresis in ferroelectric crystals.

33. Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices.

34. Mechanical flexible and electric fatigue resistant behavior of relaxor ferroelectric terpolymer.

35. Direct observation of localized conduction pathways in photocross-linkable polymer memory.

36. Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory.

37. Physical concepts of memory device operation based on piezoacousto and pyroelectric properties of ferroelectric films.

38. Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices.

39. An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements.

40. Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application.

41. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices.

42. Magnetic polaron for a spin memory application.

43. Electrical switching dynamics in circular and rectangular Ge2Sb2Te5 nanopillar phase change memory devices.

44. Memory effect near transition temperature in Sm C* phase in nonsurface stabilized ferroelectric liquid crystals.

45. Electrical behavior of memory devices based on fluorene-containing organic thin films.

46. Growth atmosphere dependence of transport properties of NiO epitaxial thin films.

47. Effect of the intrinsic width on the piezoelectric force microscopy of a single ferroelectric domain wall.

48. The morphology control of pentacene for write-once-read-many-times memory devices.

49. Fundamental drift of parameters in chalcogenide phase change memory.

50. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode.

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