Structural and electrical characteristics of high-k Tb2O3 and Tb2TiO5 charge trapping layers for nonvolatile memory applications.

In this study, we investigated the structural properties and electrical characteristics of metal/oxide/high-k material/oxide/silicon (MOHOS)-type memory devices incorporating Tb2O3 and Tb2TiO5 films as charge storage layers for nonvolatile memory applications. X-ray diffraction and x-ray photoelectron spectroscopy revealed the structural and chemical features of these films after they had been subjected to annealing at various temperatures. From capacitance-voltage measurements, we found that the MOHOS-type memory devices incorporating the Tb2TiO5 film and that had been annealed at 800 °C exhibited a larger flatband voltage shift of 2.94 V (Vg=9 V for 0.1 s) and lower charge loss of 8.5% (at room temperature), relative to those of the systems that had been subjected to other annealing conditions. This result suggests that Tb2TiO5 films featuring a thinner silicate layer and a higher dielectric constant provide a higher probability for trapping of the charge carrier and deeper electron trapping levels. [ABSTRACT FROM AUTHOR]