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1. Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates

Author: J Matheson, M Glaser, Stephen Watts, Gianluigi Casse, Arie Ruzin, F Lemeilleur, and A Zanet
Subjects: Materials science, Silicon, Physics::Instrumentation and Detectors, Mechanical Engineering, Nuclear Theory, Radiochemistry, chemistry.chemical_element, Radiation, Condensed Matter Physics, Fluence, Oxygen, Charged particle, chemistry, Mechanics of Materials, High Energy Physics::Experiment, General Materials Science, Irradiation, Nuclear Experiment, Radiation hardening, Carbon
Abstract: Radiation hardness results of silicon detectors fabricated on bulk float-zone (FZ) material enriched either by carbon or by oxygen are reported. The detectors were irradiated by nuclear reactor neutrons, by 24 GeV/ c protons and by 192 MeV pions. It has been shown that the leakage current increases with fluence equally in all silicon detectors under study, regardless of the oxygen or carbon concentrations. The variations in the space-charge density were found to be very different in the oxygen and carbon-enriched materials in the case of irradiation by charged particles, yet rather similar in case of neutrons.
Published: 2000
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2. Silicon wafer oxygenation from SiO2 layers for radiation hard detectors

Author: Miguel Ullan, B.S. Avset, Manuel Lozano, Francesca Campabadal, Arie Ruzin, C. Martı́nez, Luis Fonseca, E. Nossarzewska-Orlowska, and F. Lemeilleur
Subjects: Fabrication, Materials science, Silicon, Band gap, business.industry, chemistry.chemical_element, Strained silicon, Float-zone silicon, Condensed Matter Physics, Oxygen, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Forensic engineering, Optoelectronics, Limiting oxygen concentration, Wafer, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business
Abstract: Radiation produces lattice damage in silicon by displacing the atoms from their original positions and thereby generating the corresponding defects. As a result, new states are created in the semiconductorforbidden band gap, negatively affecting the electrical performance of the devices. Endurance to radiation can be improved by having a high oxygen concentration in the silicon. For detector fabrication, high resistivity silicon is also needed, thus float zone wafers are preferred; however, this kind of material exhibits a low oxygen concentration. Although different ways to incorporate oxygen in float zone silicon have been proposed, all of them imply modifications during the ingot growth. Thermal diffusion from SiO 2 layers on polished wafers is an interesting alternative to improve their oxygen content. Different thermal processes aimed at obtaining oxygen enriched silicon for the fabrication of radiation hard detectors have been tested. Attention has also been paid to carbon introduction during processing since, high concentrations of this element has been proved deleterious.
Published: 2000
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3. Analysis of the transient response of LED-illuminated diodes under heavy radiation damage

Author: Daniele Passeri, Paolo Ciampolini, G. M. Bilei, Gianluigi Casse, and F. Lemeilleur
Subjects: Physics, Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, business.industry, Particle detector, Semiconductor detector, Optics, Depletion region, Electric field, Radiation damage, Irradiation, Atomic physics, business, Instrumentation, Diode, Voltage
Abstract: The changes of the electrical properties induced by hadron irradiation on silicon detectors have been studied by using the device level simulator HFIELDS. The model of the radiation damage assumes the introduction of radiation-induced acceptor and donor “deep-levels”. The electric field profile and the space charge region extension have been calculated for differently irradiated structures. The simulation has been carried out at different biases in order to study the evolution of the space charge region of irradiated detectors as a function of the applied voltages, below and above the full depletion. The time-dependent current responses and the charge collection properties of the structure illuminated by a red LED light have been calculated. The use of the red light results in a shallow (quasi-surface) generation of e–h pairs in silicon, which has been properly taken into account by the simulation. The results of the simulations have been compared to experimental measurements carried out at CERN on samples irradiated with 24 GeV/c protons. The comparison results in a satisfactory agreement, and supports the physical interpretation of experimental data.
Published: 2000
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4. Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

Author: Arie Ruzin, M Wegrzecki, F. Lemeilleur, Maurice Glaser, and Gianluigi Casse
Subjects: Physics, Nuclear and High Energy Physics, Silicon, business.industry, Diffusion, Doping, chemistry.chemical_element, Oxygen, Semiconductor detector, chemistry, Optoelectronics, Wafer, Irradiation, LOCOS, business, Instrumentation
Abstract: The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm −3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer.
Published: 1999
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5. Charge transport in non-irradiated and irradiated silicon detectors

Author: Gianluigi Casse, F. Lemeilleur, E. Grigoriev, Maurice Glaser, P. Roy, and Claude Leroy
Subjects: Physics, Nuclear and High Energy Physics, Silicon, chemistry.chemical_element, Electron, Trapping, Fluence, chemistry, Charge carrier, Irradiation, Detectors and Experimental Techniques, Atomic physics, Instrumentation, Saturation (magnetic), Diode
Abstract: A model describing the transport of the carriers of the charge deposited in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by alpha and beta particles in non-irradiated and irradiated detectors up to fluences ($\Phi$) much beyond the n to p-type inversion, a n-type region 15 microns deep is introduced on the p$^+$ side of the diode. This model also gives mobilities decreasing linearily up to fluences of around $5 \cdot 10^{13}$ particles/cm$^2$, and beyond, converging to saturation values of about 1000 cm$^2$/Vs and 450 cm$^2$/Vs for electrons and holes, respectively. The charge carrier lifetime degradation, due to trapping with increased fluence, is responsible for a charge collection deficit for $\beta$ particles and for $\alpha$ particles found in agreement with direct CCE measurements.
Published: 1999
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6. Radiation hardening of silicon detectors

Author: F. Lemeilleur
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Reverse current, Charge (physics), chemistry, Impurity, Optoelectronics, business, Instrumentation, Radiation hardening, Diode, Voltage
Abstract: The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented.
Published: 1999
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7. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

Author: Stephen Watts, Gianluigi Casse, R Talamonti, F. Lemeilleur, Maurice Glaser, A. Zanet, and Arie Ruzin
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, Physics::Instrumentation and Detectors, Radiochemistry, Metallurgy, chemistry.chemical_element, Float-zone silicon, Epitaxy, Atomic and Molecular Physics, and Optics, chemistry, Impurity, Irradiation, Tin, Carbon, Radiation hardening
Abstract: Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used narmalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors.
Published: 1999
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8. Studies of radiation hardness of oxygen enriched silicon detectors

Author: Gianluigi Casse, Arie Ruzin, F. Lemeilleur, and Maurice Glaser
Subjects: Physics, Nuclear and High Energy Physics, Oxygen deficient, Silicon, business.industry, Diffusion, Detector, chemistry.chemical_element, Float-zone silicon, equipment and supplies, Oxygen, High resistivity, chemistry, Optoelectronics, Detectors and Experimental Techniques, business, Instrumentation, Radiation hardening
Abstract: Detectors for high-energy particles sustain a substantial amount of structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long “lifetime” detectors are required. This work reports about radiation hardness of silicon P-I-N devices fabricated from oxygen enriched high resistivity material. The high and nearly uniform concentration of oxygen in Float Zone silicon has been achieved by diffusion of oxygen from SiO 2 layers.
Published: 1999
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9. Study of charge transport in non-irradiated and irradiated silicon detectors

Author: F. Lemeilleur, Gianluigi Casse, Maurice Glaser, P. Roy, Claude Leroy, and E. Grigoriev
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, business.industry, Physics::Medical Physics, Detector, Analytical chemistry, chemistry.chemical_element, Fluence, Current pulse, chemistry, Optoelectronics, High Energy Physics::Experiment, Neutron, Irradiation, Detectors and Experimental Techniques, business, Instrumentation, Diode
Abstract: The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p + –n–n + diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse response induced by α and β particles in non-irradiated and irradiated silicon detectors. The detectors have been irradiated either with ≈1 MeV neutrons up to a fluence of 11.2×10 13 n/cm 2 or with 24 GeV/ c protons up to a fluence of 10.6×10 13 p/cm 2 . After n to p-type inversion, a small junction on the p + side of the detector is introduced to fit the experimental data and therefore to account for the evolution of the electrical characteristics of the detectors with fluence.
Published: 1999
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10. New irradiation zones at the CERN-PS

Author: Claude Leroy, F. Lemeilleur, P. Roy, L Durieu, M. Tavlet, and Maurice Glaser
Subjects: Physics, Nuclear and High Energy Physics, Large Hadron Collider, Physics::Instrumentation and Detectors, Photon radiation, Semiconductor detector, Nuclear physics, Upgrade, Radiation damage, Physics::Accelerator Physics, Dosimetry, High Energy Physics::Experiment, Neutron, Astrophysics::Earth and Planetary Astrophysics, Irradiation, Nuclear Experiment, Instrumentation
Abstract: After the upgrade of the CERN-PS East Hall, one irradiation zone with 24 GeV/ c protons is foreseen to be operational by the second half of 1998. Another irradiation zone with about 1 MeV neutrons will be commissioned by the first half of 1999.
Published: 1999
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11. Status and development of radiation hard silicon detectors

Author: F. Lemeilleur
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Radiation, chemistry, Optoelectronics, High Energy Physics::Experiment, business, Instrumentation, Radiation hardening
Abstract: After a review of the results achieved on the radiation hardness of standard silicon detectors, the aim of the ROSE/RD48 collaboration is presented as well as some new results on radiation hardening of silicon detectors.
Published: 1998
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12. Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors

Author: B. Dezillie, Claude Leroy, F. Lemeilleur, Gianluigi Casse, and Maurice Glaser
Subjects: Physics, Nuclear and High Energy Physics, Silicon, business.industry, Detector, chemistry.chemical_element, Epitaxy, Fluence, chemistry, Optoelectronics, Neutron, Irradiation, Detectors and Experimental Techniques, business, Instrumentation, Radiation hardening, Voltage
Abstract: A comparative study of the radiation hardness of silicon pad detectors, manufactured from float-zone and epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 × 10 14 cm −2 is presented. The results are compared in terms of their reverse current, depletion voltage, and charge collection as a function of fluence during irradiation and as a function of time after irradiation.
Published: 1997
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13. Radiation induced bulk damage in silicon detectors

Author: H. Feick, A. Rolf, G. N. Taylor, B. Kaiser, F. Lemeilleur, F. Fares, G. Lindström, Maurice Glaser, Eckhart Fretwurst, Michael Moll, R. Wunstorf, C. Furetta, S.J. Bates, Claus Gößling, E. León-Florián, and A. Chilingarov
Subjects: Physics, Nuclear and High Energy Physics, Large Hadron Collider, Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Signal, Effective nuclear charge, Nuclear physics, chemistry, Radiation damage, Optoelectronics, High Energy Physics::Experiment, business, Instrumentation, Parametrization, Voltage
Abstract: The paper discusses the current status of radiation damage to the bulk material of silicon detectors. In particular the main effects of current increase, change in the effective charge carrier density and its effect on the operation voltage, and the signal charge collection in silicon detectors are reviewed. Detailed measurements have allowed parametrization of the effects, which are in turn used to simulate long term performance of detectors in the environment expected in future hadron collider experiments. Recent results on pion damage measurements are highlighted. Studies aimed at reducing systematic errors inherent in comparing analyses of different groups are discussed, as are possible indications of material dependent effects from recent measurements.
Published: 1996
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14. LHC1: A semiconductor pixel detector readout chip with internal, tunable delay providing a binary pattern of selected events

Author: F. Pellegrini, Franco Meddi, S. Simone, Giovanni Darbo, Stanislav Pospisil, J. Stastny, E. Chesi, V. Lenti, K. Knudson, F. Lemeilleur, A. Munns, D. Di Bari, K. H. Becks, Eugenio Cantatore, Thierry Gys, H. Beker, Karel Safarik, F. Pengg, A. Jacholkowski, Demetrios Loukas, Federico Antinori, P. Burger, Paolo Martinengo, J.J. Jaeger, F. Krummenacher, L. Lopez, M. Morando, J. C. Lassalle, C. DaVia, Erik H.M. Heijne, G. Humpston, Leonardo Paolo Rossi, W. Klempt, Dario Barberis, P. Middelkamp, B. Lisowski, M. G. Catanesi, M. Letheren, W. Beusch, Kevin M. Smith, C. Sobczynski, M. Campbell, Vaclav Vrba, L. Scharfetter, Jan Jakubek, P. Musico, Rupert Leitner, Pierre Jarron, G. Meddeler, J. Kubasta, Walter Snoeys, M. Luptak, G.F. Segato, Paolo Morettini, E. Quercigh, Saverio D'Auria, S. Di Liberto, J. Ridky, Physique Corpusculaire et Cosmologie - Collège de France (PCC), Collège de France (CdF (institution))-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and WA97
Subjects: Masking (art), Physics, Nuclear and High Energy Physics, Discriminator, 010308 nuclear & particles physics, business.industry, Amplifier, Detector, Transistor, Integrated circuit, Chip, 01 natural sciences, law.invention, Semiconductor, law, 0103 physical sciences, Optoelectronics, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques, 010306 general physics, business, Instrumentation
Abstract: The Omega3/LHC1 pixel detector readout chip comprises a matrix of 128 × 16 readout cells of 50 μm × 500 μm and peripheral functions with 4 distinct modes of initialization and operation, together more than 800 000 transistors. Each cell contains a complete chain of amplifier, discriminator with adjustable threshold and fast-OR output, a globally adjustable delay with local fine-tuning, coincidence logic and memory. Every cell can be individually addressed for electrical test and masking. First results have been obtained from electrical tests of a chip without detector as well as from source measurements. The electronic noise without detector is ∼ 100 e− rms. The lowest threshold setting is close to 2000 e− and non-uniformity has been measured to be better than 450 e− rms at 5000 e− threshold. A timewalk of
Published: 1996
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15. Pion-induced damage in silicon detectors

Author: G. Lindström, Eckhart Fretwurst, E. León-Florián, B. Kaiser, Claus Gößling, A. Chilingarov, F. Lemeilleur, S.J. Bates, R. Wunstorf, H. Feick, C. Furetta, M. Glaser, A. Rolf, Michael Moll, and G. N. Taylor
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, Annealing (metallurgy), Nuclear Theory, Detector, chemistry.chemical_element, Pion, chemistry, Impurity, Neutron, Detectors and Experimental Techniques, Atomic physics, Nuclear Experiment, Instrumentation
Abstract: The damage induced by pions in silicon detectors is studied for positive and negative pions for fluences up to 1014 cm−2 and 1013 cm−2, respectively. Results on the energy dependence of the damage in the region of 65 to 330 MeV near to the Δ resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron- and proton-induced damage are presented and discussed.
Published: 1996
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16. Energy and spatial resolution of a Shashlik calorimeter and a silicon preshower detector

Author: J.F. Connolly, Kajari Mazumdar, S. N. Gninenko, E. Clayton, A. Marchioro, D. B. Miller, R. Djilkibaev, P. Moissenz, Claude Charlot, Yu. Protopopov, P. Spiridonov, I. Semenyuk, Y. Musienko, A. Busata, Ivica Puljak, V. V. Popov, P. Busson, A. K. Skasyrskaya, F. Lemeilleur, P. Bordalo, V. Obraztsov, N. Zamiatin, S. Ramos, A. Sidorov, R. Grabit, Igor Golutvin, Christopher Seez, Y. Kozlov, L. Denton, Joao Varela, A. Karar, P. Aspell, A. Ostankov, E. Guschin, P. Bloch, L. Dobrzynski, E. Rosso, S.J. Bates, A. Gurtu, Pierre Jarron, S. Bityukov, P. Manigot, V. Soushkov, I. Soric, T. Moulik, S. K. Gupta, J. Bourotte, R. Tanaka, Manas Maity, O. Ferreira, S. Sergueev, Gobinda Majumder, S. R. Chendvankar, V. Rykalin, K. Kloukinas, I. Cheremukhin, E. Zubarev, S. N. Ganguli, R. Loos, Tejinder Virdee, A. Egorov, C. Gregory, Nikola Godinovic, J. Badier, J.Ch. Vanel, V. Vasilchenko, and David Ja Cockerill
Subjects: Physics, Nuclear and High Energy Physics, Calorimeter (particle physics), Physics::Instrumentation and Detectors, Astrophysics::High Energy Astrophysical Phenomena, Detector, Resolution (electron density), CMS, ECAL, Shashlik, energy resolution, preshower, position resolution, Scintillator, Noise (electronics), Nuclear physics, High Energy Physics::Experiment, Angular resolution, Detectors and Experimental Techniques, Nuclear Experiment, Instrumentation, Image resolution
Abstract: New projective prototypes of a scintillator/lead sandwich type sampling calorimeter Shashlik with a silicon preshower detector have been constructed and tested with an electron beam at CERN-SPS. The energy resolution is measured to be 8.7%/sqrt(E(GeV)) in stochastic term. 0.330/E(GeV) in noise term and 0.5% in constant term. The angular resolution is better than 70 mrad/sqrt(E(GeV)).
Published: 1996
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17. Fluence and dosimetric measurements for a π± irradiation facility

Author: S.J. Bates, M. Glaser, E. León-Florián, M. Tavlet, F. Lemeilleur, Claude Leroy, and C. Furetta
Subjects: Physics, Nuclear and High Energy Physics, Dosimeter, Silicon, Radiochemistry, chemistry.chemical_element, Radiation, Thermoluminescence, Fluence, Atomic and Molecular Physics, and Optics, Nuclear physics, chemistry, Ionization chamber, Calibration, Irradiation
Abstract: This paper briefly describes the pion irradiation facility used by the SIRAD (Silicon Radiation) Collaboration in mid-1994 at the Paul Scherrer Institute (PSI) in Villigen, Switzerland, and reports the fluence measurements carried out with the Al activation technique during silicon detector irradiations. Calibration factors were determined as a ratio between the fluence and the number of counts from an ionization chamber. Some dosimetric measurements were also performed using alanine and thermoluminescent dosimeters, which allowed the π and the γ dose rates to be determined. 115 In activation was also used to determine the neutron contamination around the π -beam.
Published: 1995
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18. Experimental determination of the energy generated in nuclear cascades by a high energy beam

Author: Xuan Li, P. Kokkas, P. Cennini, J. Calero, C. Roche, Alfredo Lorente, S. Buono, G. Zarris, A. Apostolakis, Eduardo Gallego, G. Lindecker, Federico Carminati, K. Sakelariou, J. Galvez, Loukas Sakelliou, C. López, R. Klapisch, J. Jaren, S. Vlachos, J. Tamarit, A. Liolios, J.A. Pinston, L. Brillard, C. Geles, F. Schussler, D. Trubert, A. Angelopoulos, F. Attale, A. Giorni, M. Macri, F. Casagrande, José M. Martínez-Val, R. Del Moral, I. Goulas, J.M. Loiseaux, S. Vieira, E. González, P. Pavlopoulos, S. Andriamonje, F. Lemeilleur, Stef. Charalambous, L. Garcia-Tabares, C. Eleftheriadis, H. Nifenecker, F. Saldana, J. Oropesa, J. A. Rubio, J. P. Revol, C. Rubbia, M. Hussonnois, and J.B. Viano
Subjects: Physics, Nuclear and High Energy Physics, Range (particle radiation), Proton, chemistry.chemical_element, Natural uranium, Uranium, Kinetic energy, Energy amplifier, Nuclear physics, chemistry, Depleted uranium, Physics::Accelerator Physics, Atomic physics, Nuclear Experiment, Beam (structure)
Abstract: An already existing, sub-critical arrangement made of natural uranium and water moderator has been exposed to a low intensity (≈ 109 ppp) proton beam from CERN-PS at several kinetic energies from 600 MeV to 2.75 GeV. The energy delivered by the hadronic cascade induced by the beam in the device has been measured by the temperature rise of small sampling blocks of uranium located in several different positions inside the device and counting the fissions in thin probe foils of natural uranium. We find typically G ≈ 30 in reasonable agreement with calculations, where G is the ratio of the energy produced in the device to the energy delivered by the beam. This result opens the way to the realisation of the so-called Energy Amplifier, a practical device to produce energy from thorium or depleted uranium targets exposed to an intense high energy proton beam. Results show that the optimal kinetic is ≥ 1 GeV, below which G decreases but is still acceptable in the energy range explored
Published: 1995
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19. Neutron, proton and gamma irradiations of silicon detectors

Author: Pierre Jarron, J. Rioux, Claude Leroy, C. Soave, Erik H.M. Heijne, F. Lemeilleur, I. Trigger, and Maurice Glaser
Subjects: Physics, Nuclear and High Energy Physics, Proton, Silicon, Physics::Instrumentation and Detectors, Hadron, Gamma ray, chemistry.chemical_element, Charged particle, Particle detector, Semiconductor detector, Nuclear physics, Nuclear Energy and Engineering, chemistry, High Energy Physics::Experiment, Neutron, Detectors and Experimental Techniques, Electrical and Electronic Engineering, Nuclear Experiment
Abstract: Future high-energy hadron colliders (LHC, SSC) will generate a high flux of hadronic and electromagnetic particles in the experimental areas which has to be sustained by the detectors. The performance and electrical characteristics of silicon detectors evolve with time, during and after irradiations with 1 MeV neutrons up to 1.1/spl times/10/sup 14/ n cm/sup -2/, with 24 GeV protons up to 9.5/spl times/10/sup 13/ p cm/sup -2/, and with /sup 60/Co gammas up to 10 Mrad. Ion-implanted single-diode silicon detectors with an area of 1 cm/sup 2/ have been used for these studies. >
Published: 1994
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20. Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

Author: H. Feick, Erik H.M. Heijne, Claus Gössling, G. Lindström, F. Lemeilleur, C. Soave, K.H. Mahlmann, A. Hess, A. Rolf, T. Schulz, Eckhart Fretwurst, and Maurice Glaser
Subjects: Physics, Nuclear and High Energy Physics, Silicon, business.industry, Annealing (metallurgy), chemistry.chemical_element, Atmospheric temperature range, Particle detector, Semiconductor detector, chemistry, Impurity, Radiation damage, Optoelectronics, Detectors and Experimental Techniques, business, Instrumentation, Radiation hardening
Abstract: Systematic investigations of the reverse annealing effect after radiation damage have been performed in particular for the change of the effective impurity concentration. The pronounced long term anneal observed at room temperature was further investigated by isochronal and isothermal studies. In order to demonstrate the radiation hardness of silicon detectors during 10 years of LHC operation an experiment was started at a higher temperature which compressed the real operational scenario to about 10 months.
Published: 1994
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21. Study of neutron irradiated silicon counters with a fast amplifier

Author: A.G. Clark, A. Rolf, B. Lisowski, J. Teiger, R. Bonino, D. J. Munday, F. Lemeilleur, A. R. Weidberg, H. Kambara, S. Pilath, Francis Anghinolfi, G. Lindström, G. F. Moorhead, Maurice Glaser, A. Ciasnohova, Xin Wu, G. N. Taylor, R.J. Hawkings, T. Schulz, Eckhart Fretwurst, J.C. Santiard, Claus Gößling, Pierre Jarron, S. N. Tovey, S. J. Bates, A. Chilingarov, and Michael Andrew Parker
Subjects: Physics, Nuclear and High Energy Physics, Silicon, business.industry, Preamplifier, Amplifier, Detector, Shot noise, chemistry.chemical_element, Optics, chemistry, Optoelectronics, Neutron, Irradiation, business, Instrumentation, Dark current
Abstract: Silicon detectors have been irradiated with fluences of up to 2.7 × 10 13 neutrons/cm 2 , and have been subsequently studied using low-noise preamplifiers with a peaking time of about 15 ns. The detector response to minimum ionizing particles was found to be close to that of non-irradiated detectors. The short integration time of the preamplifier makes the shot noise due to the detector dark current tolerable up to at least 15 μA/channel.
Published: 1993
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22. Neutron irradiation of silicon diodes at temperatures of +20°C and −20°C

Author: Francis Anghinolfi, G. Lindström, Pierre Jarron, R. Klingenberg, Claus Gössling, R. Wunstorf, Allan G Clark, Paola Scampoli, Alan Poppleton, Erik H.M. Heijne, R. Bonino, A. R. Weidberg, E. Occelli, D. Pollmann, R.A. Bardos, A. Rolf, Michael Andrew Parker, F. Lemeilleur, G. F. Moorhead, T. Schulz, Eckhart Fretwurst, S. J. Bates, G. Gorfine, Xin Wu, G. N. Taylor, H. Pagel, M. Glaser, N. Claussen, S. N. Tovey, B. Papendick, and D. J. Munday
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, business.industry, Annealing (metallurgy), Detector, Physics::Optics, chemistry.chemical_element, Semiconductor detector, chemistry, Impurity, Radiation damage, Optoelectronics, Neutron, business, Instrumentation, Diode
Abstract: We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5 × 10 13 neutron/cm 2 . The measurements have been made at diode temperatures between room temperature and −20°C. From measurements of the diode leakage current and depletion voltage, and consequent evaluations of the effective impurity concentration, the temperature dependence of these quantities is discussed in terms of the annealing behaviour of the diodes. Comments are made on the suitability of silicon as a detector medium for particle physics experiments at future accelerators.
Published: 1993
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23. Neutron-induced radiation damage in silicon detectors

Author: M. Glaser, Pierre Jarron, F. Lemeilleur, E. Occelli, and Erik H.M. Heijne
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, business.industry, Doping, chemistry.chemical_element, Fluence, Semiconductor detector, Nuclear Energy and Engineering, chemistry, Neutron flux, Radiation damage, Optoelectronics, Neutron, Detectors and Experimental Techniques, Electrical and Electronic Engineering, Atomic physics, business, Diode
Abstract: Ion-implanted silicon pad detectors fabricated on different n-type and p-type silicon wafers with initial resistivities between 2.6 and 12.9 k Omega -cm have been irradiated with neutrons of approximately 1 MeV energy, up to a fluence of 5*10/sup 13/ n cm/sup -2/. The evolution of diode leakage current and capacitance characteristics is presented as a function of the neutron fluence. The reverse diode current increases proportionally to the neutron fluence. There is evidence that the doping of the initial n-type material evolves towards an intrinsic and inverts to an apparent p-type at fluences between 1*10/sup 13/ and 3*10/sup 13/ n cm/sup -2/, depending on the initial silicon resistivity. There is also evidence that p-type material remains of the same conduction type with a slight increase of the acceptor doping with fluence. The signal shape and the charge collection efficiency for incident beta particles have also been measured. >
Published: 1992
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24. Systematic investigation of the local hardening effect and lateral electromagnetic shower development

Author: S. Pensotti, Paolo Giubellino, F. Lemeilleur, C. Furetta, Maurice Glaser, C. Manoukian-Bertrand, F. Lamarche, Luciano Ramello, P. G. Rancoita, E. Borchi, L. Riccati, Claude Leroy, A. Penzo, L. Vismara, and R. Paludetto
Subjects: Physics, Nuclear and High Energy Physics, integumentary system, Silicon, Physics::Instrumentation and Detectors, business.industry, Astrophysics::High Energy Astrophysical Phenomena, Hadron, chemistry.chemical_element, Mechanics, Atomic and Molecular Physics, and Optics, Exponential function, Active layer, Shower, Optics, Sampling (signal processing), chemistry, Development (differential geometry), Detectors and Experimental Techniques, business, human activities, Hardening effect
Abstract: In silicon sampling calorimeters, a local hardening effect occurs when inserting a small thickness of low-Z material next to the thin active layer. This effects, which modifies appreciably the electromagnetic response, allows the control of the relative responses to hadronic and electromagnetic showers. A thorough study of lateral shower profiles has been undertaken to improve the precision of the measurement of the absolute electromagnetic response. The main features of the local hardening effect as a function of the thickness of low-Z material are explained by a 1/E distribution of ionizing particles inside the shower, while those of the lateral profile are explained by an exponential radial distribution.
Published: 1991
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25. The compensation condition in hadron calorimeters by the filtering effect

Author: Paolo Giubellino, L. Vismara, A. Seidman, C. Furetta, L. Ramello, Claude Leroy, F. Lamarche, Mara Bruzzi, R. Macii, R. Paludetto, P. G. Rancoita, L. Riccati, A. Penzo, E. Borchi, S. Pensotti, and F. Lemeilleur
Subjects: Physics, Nuclear and High Energy Physics, Photon, Physics::Instrumentation and Detectors, Hadron, Elementary particle, Electron, Calorimetry, Electromagnetic radiation, Particle detector, Calorimeter, Nuclear physics, Nuclear Energy and Engineering, Electrical and Electronic Engineering
Abstract: Experimental evidence has been found for a filtering effect on the soft electron component in electromagnetic showers when combinations of low-Z and high-Z materials are used as absorbers. The filtering effect can be fully exploited to reduce the electromagnetic calorimeter response, making it possible to achieve the compensation condition in a Si/Fe+Pb calorimeter with an effective interaction length almost equal to that of Fe. The action of Fe on Pb, by modifying the critical energy during the electromagnetic shower development, leads to a yield of soft electrons (and very few photons) that are stopped in subsequent absorber layers and/or absorbed by the G10 plates. Recent measurements performed with an enlarged Si/Fe+Pb calorimeter support the idea; the authors have shown that an electromagnetic energy smaller than the hadronic energy is possible once particular FePb configurations are used. >
Published: 1990
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26. Radiation hardness of single-pad detectors made of non-standard silicon materials

Author: Gianluigi Casse, Maurice Glaser, E. Grigoriev, F. Lemeilleur, B. Dezillie, and K. Zankel
Subjects: Physics, Nuclear and High Energy Physics, Proton, Silicon, business.industry, Detector, chemistry.chemical_element, Reverse current, Charge (physics), Fluence, chemistry, Optoelectronics, business, Instrumentation, Radiation hardening, Voltage
Abstract: The radiation hardness of single-pad silicon detectors manufactured from non-standard silicon materials was studied up to proton fluences of 2–3×1014 cm−2. The results are presented in terms of reverse current, full depletion voltage and charge collection efficiency as a function of the proton fluence.
Published: 1998
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27. NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C

Author: F. ANGHINOLFI, R. BARDOS, S. J. BATES, R. BONINO, A. G. CLARK, N. CLAUSSEN, E. FRETWURST, M. GLASER, G. GORFINE, C. GOSSLING, E. H. M., P. JARRON, R. KLINGENBERG, F. LEMEILLEUR, G. LINDSTROM, G. MOORHEAD, D. J. MUNDAY, E. OCCELLI, H. PAGEL, B. PAPENDICK, M. A. PARKER, D. POLLMANN, A. POPPLETON, A. ROLF, T. SCHULZ, G. TAYLOR, S. TOVEY, A. R. WEIDBERG, X. WU, R. WUNSTORF, SCAMPOLI, PAOLA, F., Anghinolfi, R., Bardo, S. J., Bate, R., Bonino, A. G., Clark, N., Claussen, E., Fretwurst, M., Glaser, G., Gorfine, C., Gossling, E. H., M., P., Jarron, R., Klingenberg, F., Lemeilleur, G., Lindstrom, G., Moorhead, D. J., Munday, E., Occelli, H., Pagel, B., Papendick, M. A., Parker, D., Pollmann, A., Poppleton, A., Rolf, Scampoli, Paola, T., Schulz, G., Taylor, S., Tovey, A. R., Weidberg, X., Wu, and R., Wunstorf
Subjects: neutron exposure, silicon detector
Abstract: We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5 x 10(13) neutrons/cm 2. The measurements have been made at diode temperatures between room temperature and -20-degrees-C. From measurements of the diode leakage current and depletion voltage, and consequent evaluations of the effective impurity concentration, the temperature dependence of these quantities is discussed in terms of the annealing behaviour of the diodes. Comments are made on the suitability of silicon as a detector medium for particle physics experiments at future accelerators.
Published: 1993

28. The design and function of a radiation tolerant silicon tracker for an LHC experiment

Author: M. Rouger, Francis Anghinolfi, R. Hawkings, Allan G Clark, P. Lubrano, D. J. Munday, H. Verweij, F. Lemeilleur, R. Wunstorf, J. Teiger, Michael Andrew Parker, C. Göβling, H. Pagel, A. Chilingarov, Claude Leroy, G. Lindström, P. Seller, Pierre Jarron, S. J. Bates, X. Wu, D. Campbell, A. Rolf, E. Tsesmelis, Erik H.M. Heijne, G. Taylor, R. Bonino, E. Occelli, T. Schulz, T. Weiβe, E. Fretwurst, P. Murray, J. C. Santiard, P. Aspell, Paola Scampoli, C. Couyoumtzelis, A. Weidberg, J. Rioux, G. Nawrath, S. Tovey, G. Moorhead, M. Glaser, O. Gildemeister, B. Papendick, P. Roy, R. Spiwoks, N. Claussen, R. Bardos, G. Gorfine, A. Poppleton, A. Reichold, S. Pilath, S. J., Bate, F., Anghinolfi, P., Aspell, R., Bardo, R., Bonino, D., Campbell, A., Chilingarov, A. G., Clark, N., Claussen, C., Couyoumtzeli, E., Fretwurst, O., Gildemeister, M., Glaser, G., Gorfine, C., Gossling, R., Hawking, E. H., M., P., Jarron, F., Lemeilleur, C., Leroy, G., Lindstrom, P., Lubrano, G., Moorhead, D. J., Munday, P., Murray, G., Nawrath, E., Occelli, H., Pagel, B., Papendick, M. A., Parker, S., Pilath, A., Poppleton, A., Reichold, J., Rioux, A., Rolf, M., Rouger, P., Roy, J. C., Santiard, Scampoli, Paola, T., Schulz, P., Seller, R., Spiwok, G., Taylor, J., Teiger, E., Tsesmeli, S., Tovey, H., Verweij, A., Weidberg, T., Weisse, X., Wu, and R., Wunstorf
Subjects: Flexibility (engineering), Nuclear and High Energy Physics, Engineering, Large Hadron Collider, Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Tracking (particle physics), Atomic and Molecular Physics, and Optics, chemistry, Component (UML), Electronic engineering, Granularity, Electronics, Detectors and Experimental Techniques, business
Abstract: We present a description of the RD2 design for a silicon tracking detector and discuss its function as an integrated component of an LHC experiment. An advantage of the design is that considerable flexibility is possible in the granularity and radial position of each plane; these parameters are determined by the physics requirements as well as by the radiation environment, engineering and electronics considerations. The simulated performance of the detector is discussed and our experimental investigations of irradiation effects are summarised. The development of an analogue pipe-line and related front-end electronics for the storage and processing of the signals is described. Our work indicates the suitability of silicon as a detector for LHC experiments.
Published: 1993

29. Radiation test facilities in the new PS East Hall at CERN

Author: M. Huhtinen, P. Roy, M. Tavlet, Maurice Glaser, C. Leroy, and F. Lemeilleur
Subjects: Physics, Nuclear physics, Large Hadron Collider, Proton, Monte Carlo method, Physics::Accelerator Physics, Proton Synchrotron, Neutron, Irradiation, Radiation, Nuclear Experiment, Beam (structure)
Abstract: At the CERN Proton Synchrotron (PS), the 24 GeV/c primary beam allows the operation of two new irradiation facilities. One is using directly the primary proton beam and the other one is using secondary particles (mainly /spl sim/1 MeV neutrons) produced in a cavity after a beam stopper. For both facilities, samples to be irradiated are brought to the irradiation positions by means of automatic shuttles. Designs, Monte Carlo simulations of particle spectra and background are presented as well as the performance achieved.
Published: 2003
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30. The commissioning of the LEP polarimeter

Author: J. de Vries, M. Placidi, F. Lemeilleur, K. Unser, R. Jung, M. Crozon, M. Glaser, A. Blondel, Bernd Dehning, G.P. Ferri, C. Grunhagel, P. Castro-Garcia, J. Mann, Ricardo de Oliveira Schmidt, L. Knudsen, J. Badier, and Claude Bovet
Subjects: Physics, Beam diameter, business.industry, Polarimeter, Laser, Polarization (waves), Beam parameter product, law.invention, Transverse plane, Optics, Data acquisition, law, Laser beam quality, business
Abstract: A laser polarimeter has been installed in LEP to measure the transverse beam polarization. The authors describe the layout, the production and the control of the polarization of the laser light, the photon detector, and the data acquisition philosophy. The commissioning experience in the first year of operation of the device is discussed together with recent results on the detection of transverse polarization. The behavior of the instrument was found to be in agreement with the predicted performance. The control and the optimization of the polarization states of the laser light were performed from the optical laboratory, and the quality of the circular light was adequate to produce observable effects on the mean-shift of the vertical distributions. >
Published: 2002
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31. Charge transport in non-irradiated and irradiated silicon diodes

Author: Claude Leroy, Gianluigi Casse, F. Lemeilleur, P. Roy, Maurice Glaser, and E. Grigoriev
Subjects: Materials science, Silicon, Physics::Instrumentation and Detectors, business.industry, Analytical chemistry, chemistry.chemical_element, Electron, Fluence, chemistry, Electrical resistivity and conductivity, Optoelectronics, Charge carrier, Irradiation, Detectors and Experimental Techniques, business, Saturation (magnetic), Diode
Abstract: A model describing the transport of charge carriers generated in silicon detectors (standard planar float zone and MESA diodes) by ionizing particles is presented. The current pulse response induced by /spl alpha/ and /spl beta/ particles in non-irradiated detectors and detectors irradiated up to fluences /spl Phi//spl ap/3/spl middot/10/sup 14/ particles/cm/sup 2/ is reproduced through this model: i) by adding a small n-type region 15 /spl mu/m deep on the p/sup +/ side for the standard planar float zone detectors at fluences beyond the n to p-type inversion and ii) for the MESA detectors, by considering one dead layer 14 /spl mu/m deep (observed experimentally) on each side, and introducing a second (delayed) component. For both types of detectors, the model gives mobilities decreasing linearity up to fluences of about 5/spl middot/10/sup 13/ particles/cm/sup 2/ and converging, beyond, to saturation values of about 1000 cm/sup 2//Vs and 455 cm/sup 2//Vs for electrons and holes, respectively. At a fluence /spl Phi//spl ap/10/sup 14/ particles/cm/sup 2/, charge collection deficits of about 13% for /spl beta/ particles, 25% for /spl alpha/ particles incident on the front and 35% for /spl alpha/ particles incident on the back of the detector are found for both type of diodes.
Published: 2002
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32. Proton irradiation of various resistivity silicon detectors

Author: F. Lemeilleur, Maurice Glaser, E. Leon-Florian, B. Dezillie, C. Furetta, and S.J. Bates
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, Physics::Instrumentation and Detectors, business.industry, Annealing (metallurgy), chemistry.chemical_element, Germanium, Fluence, Particle detector, Nuclear physics, Ion implantation, Nuclear Energy and Engineering, chemistry, Electrical resistivity and conductivity, Optoelectronics, Irradiation, Electrical and Electronic Engineering, business
Abstract: Future high energy physics experiments at CERN's Large Hadron Collider will use high precision silicon detectors for tracking purposes. The hadronic component of the radiation received threatens the lifetime of these detectors and it is vital to choose the silicon starting material to maximise the performance and lifetime. Ion-implanted silicon detectors with various initial resistivities and germanium concentrations have been irradiated with high energy protons up to a fluence of 10/sup 14/ cm/sup -2/. The change in leakage current and full depletion voltage have been studied both as a function of fluence and of time after irradiation. Measurements were made up to 100 days post-irradiation at room temperature and then using heating techniques to accelerate processes up to the equivalent of over 10 years at room temperature. The leakage-current damage constant is shown to be independent of the starting material while the conduction type inversion point and the long-term annealing of the depletion voltage are sensitive to the initial resistivity and impurity concentrations.
Published: 2002
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33. Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration

Author: Eicke R. Weber, A. Vasilescu, Lucian Pintilie, Stephen Watts, Donato Creanza, Vladimír Linhart, Ioana Pintilie, J. Wüstenfeld, F. Hauler, Roberto Dell'Orso, E. M. Verbitskaya, Mara Bruzzi, S. Heising, D.F. Anderson, Vladimir Cindro, Val O'Shea, Paolo Ciampolini, B. Sundby Avset, W. Slysz, Robert Richter, R. Wheadon, R. Wunstorf, Manuel Lozano, G. M. Bilei, Alessia Tricomi, T. Botila, P. Burger, Maurice Glaser, Gerhard Lutz, A. Markou, Ladislav Andricek, J. Wyss, Paul Clauws, A. Vayaki, I. Węgrzecka, M. Ahmed, Mika Huhtinen, Giorgio Fallica, A. Chilingarov, A. Holmes-Siedle, Vincenzo Augelli, E. Catacchini, M. Angarano, Joan Marc Rafi, W. De Boer, L. Jungermann, D. Petre, Z. Li, K. Stolze, C. Raine, Luigi Schiavulli, M. Mikuž, A. Pickford, C. Da Via, Spyros Tzamarias, I. Siotis, M. J. Costa, Z. Luczynski, Stanislav Pospisil, D. Žontar, J. Fuster, N. Bacchetta, Arie Ruzin, Gianluigi Casse, Z. Kohout, Georgios Fanourakis, G. Parrini, Michael Moll, M Kuhnke, Renato Potenza, Piero Giorgio Verdini, M. De Palma, K. Zankel, Claude Leroy, Gregor Kramberger, P. Sicho, Shaun Roe, F. Lemeilleur, Petra Riedler, K. Gabathuler, B. G. Svensson, Vaclav Vrba, Andrew Ivanov, Roland Horisberger, M. Wegrzecki, Piotr Grabiec, Richard Bates, U. Biggeri, H. Feick, Teresa Ligonzo, M. Letheren, Simon Kwan, A. Kaminsky, Gavin Davies, E. Fretwurst, Geoffrey Hall, E. Borchi, A. Santocchia, P. Roy, C.D. Wilburn, B. C. MacEvoy, T. Budzyński, Guido Tonelli, Dario Bisello, A.I. Ryazanov, Alberto Messineo, G. Ottaviani, Ettore Focardi, C Martinez, B.K. Jones, Daniele Passeri, P. Bartalini, P.G. Litovchenko, O. Evrard, I. Ilyashenko, M. Solanky, C. Tivarus, V. K. Eremin, Giusy Valvo, P. Weilhammer, D. Boemi, T. J. Sloan, Demetrios Loukas, P. Zabierowski, P. N. Ratoff, G. Hughes, Francesca Campabadal, Sebastiano Albergo, Phillip Allport, E. Nossarzewska, B. Dezillie, S. Manolopoulos, T. J. Brodbeck, Kristine M. Smith, B. Sopko, M. Hanlon, I. Wilhelm, Luis Fonseca, G. Lindström, and E. Grigoriev
Subjects: Physics, Radiation hardness, Nuclear and High Energy Physics, Silicon detectors, Radiation hardness, Defect engineering, Non ionizing energy loss, irradiation, Silicon, Physics::Instrumentation and Detectors, business.industry, Doping, silicon devices, chemistry.chemical_element, Non ionizing energy loss, Defect engineering, Semiconductor detector, chemistry, Radiation damage, Optoelectronics, Silicon detectors, Neutron, Irradiation, business, Instrumentation, Radiation hardening, Diode
Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.
Published: 2001

34. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

Author: Phillip Allport, Francesca Campabadal, Sebastiano Albergo, E. Nossarzewska, P. Zabierowski, B. Dezillie, S. Manolopoulos, K. Gabathuler, T. J. Brodbeck, Lucian Pintilie, M. Wegrzecki, C. Tivarus, J. Fuster, Simon Kwan, A. Kaminsky, V. K. Eremin, M. Hanlon, Stephen Watts, Donato Creanza, D. Zontar, U. Biggeri, Andrew Ivanov, P. N. Ratoff, M. Letheren, Roberto Dell'Orso, Val O'Shea, Manuel Lozano, G. Hughes, J. Wüstenfeld, L. Jungermann, D. Boemi, G. Lutz, Alessia Tricomi, B.K. Jones, Giusy Valvo, Vladimír Linhart, C Martinez, Kevin M. Smith, Guido Tonelli, Vaclav Vrba, T. Budzyński, Demetrios Loukas, F. Hauler, P. Roy, Ettore Focardi, C. Leroy, Luigi Schiavulli, A. Vayaki, S. Heising, Giorgio Fallica, A. Chilingarov, A. Holmes-Siedle, M. Angarano, I. Węgrzecka, A. Pickford, K. Stolze, G. M. Bilei, P.G. Litovchenko, O. Evrard, P. Bartalini, M. Ahmed, I. Siotis, Piotr Grabiec, Mika Huhtinen, T. J. Sloan, Paolo Ciampolini, Ladislav Andricek, J. Wyss, A. Santocchia, C.D. Wilburn, Maurice Glaser, Piero Giorgio Verdini, Arie Ruzin, K. Zankel, Joan Marc Rafi, A. Markou, Gianluigi Casse, Z. Kohout, H. Feick, Geoffrey Hall, B. Sopko, W. De Boer, V. Radicci, Teresa Ligonzo, E. M. Verbitskaya, I. Wilhelm, Shaun Roe, S. Tzamarias, E. Borchi, Gregor Kramberger, B. G. Svensson, Dario Bisello, Mara Bruzzi, D.F. Anderson, Ioana Pintilie, M. J. Costa, Alberto Messineo, M. Solanky, Vincenzo Augelli, E. Catacchini, B. Sundby Avset, W. Slysz, C. Raine, I. Ilyashenko, Luis Fonseca, Eckhart Fretwurst, Paul Clauws, G. Lindström, Z. Luczynski, E. Grigoriev, Eicke R. Weber, M Kuhnke, Renato Potenza, F. Lemeilleur, Petra Riedler, G. Ottaviani, R. Wheadon, A. Vasilescu, Roland Horisberger, Richard Bates, Gavin Davies, M. Miku, Z. Li, Stanislav Pospisil, N. Bacchetta, P. Sicho, B. C. MacEvoy, C. Da Via, M. De Palma, Georgios Fanourakis, G. Parrini, Michael Moll, A.I. Ryazanov, D. Petre, Daniele Passeri, P. Weilhammer, Vladimir Cindro, Robert Richter, R. Wunstorf, P. Burger, and T. Botila
Subjects: Radiation hardness, Physics, Nuclear and High Energy Physics, Oxygen enrichment, Large Hadron Collider, Consequences for high energy physics applications, Nuclear engineering, Gamma, Detector, silicon detectors, Defect engineering, Improved radiation tolerance by oxygen enrichment, Status report, Silicon detectors, Gamma, neutron, proton- and pion irradiation, Improved radiation tolerance by oxygen enrichment, Annealing studies, Consequences for high energy physics applications, Nuclear physics, proton- and pion irradiation, Annealing studies, Damage effects, Instrumentation
Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.
Published: 2001

35. Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material

Author: Arie Ruzin, Maurice Glaser, and F. Lemeilleur
Subjects: Materials science, Silicon, Physics::Instrumentation and Detectors, Annealing (metallurgy), Radiochemistry, Metallurgy, chemistry.chemical_element, Radiation, Oxygen, chemistry.chemical_compound, Chemical species, chemistry, Silicon carbide, High Energy Physics::Experiment, Carbon, Radiation hardening
Abstract: Recent results on the radiation hardness of silicon detectors fabricated on gloat zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 collaboration, which is studying the radiation hardening of silicon detectors.
Published: 1999
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36. ATLAS DETECTOR AND PHYSICS PERFORMANCE TECHNICAL DESIGN REPORT

Author: John Baines, T. Yang, J. Dodd, J-M. Noppe, S. Meuser, T. Embry, Ludovico Pontecorvo, V. V. Lapin, Alexander Cheplakov, S. P. Baranov, S. R. Hou, S. Errede, Valerio Vercesi, D. J. Schotanus, M. Keil, J. Stastny, H. Wellenstein, V.V. Gilevsky, W. J. Murray, I. A. Pless, Pavol Strizenec, J. Salt, V. A. Korotkov, Peter Jenni, M. Tadel, F. Tang, E. Sayouty, F. Rossel, J. M. Butterworth, W. Burris, M. El Kacimi, Akira Yamamoto, Ph. Demierre, Polina Kuzhir, Y. Jacquier, D. Hayes, A. Krivchitch, S. W. O'Neale, H. Ten Kate, F. Waldner, Petr Sicho, F. M. Newcomer, G. Chiefari, Jianqiao Ye, G. Lehmann, M. A. Dobbs, Yu.A. Khokhlov, Francesco Spanò, L. Holm, K. J. Anderson, H. Drevermann, Ph Martin, D.J. Martin, A. Atag, S. M. Fisher, H. van der Bij, Odette Benary, Mihai Caprini, C. Brouwer, M. Holder, M. Franklin, F. E. Taylor, P.R. Turner, Sam Daniel Mullin, G. Sette, V.A. Onuchin, J. Sorokina, Joleen Pater, Hiroshi Sakamoto, V.I. Sirotenko, Simon George, P. G. Estabrooks, R. K. Keeler, D. Glenzinsky, A. Astvatsaturov, Takahiko Kondo, L. S. Peak, A. G. Clark, Yu. Merzlyakov, F. Crijns, B. Canton, H. J. Burckhart, Jacqueline Batley, K. Jon-And, M. Vassiliou, D. Bocian, F. Haug, Sp. Dedoussis, J. J. Thaler, Rupert Leitner, M. Tyndel, Osamu Sasaki, V. Filimonov, P. Stassi, D. Kuhn, M. Spitalieri, F. Zuffranieri, J. Hrivnac, John Hart, Yu.I. Salomatin, A. Lebedev, G. Blanchot, David Francis, Marcello Fanti, A.G. Shamov, Stefan Koperny, Susanne Kersten, Theodora Papadopoulou, B. Kaan, G. Reinmuth, Kaushik De, B. Yang, L. Tuura, R. Hashemi-Nezhad, J. Pouxe, Th. Baer, A. Kerr, Uwe Bratzler, O. Martin, Patrick Fassnacht, J. M. Lopez, D. Calvet, G. Martin-Chassard, Vincent Hedberg, D. Sopromadze, Sylvain Fichet, A. Ferrer, Serge Smirnov, T. Lari, C. Zeitnitz, B. Dulny, M.V. Kuzmin, T. Kohriki, Vasiliki A Mitsou, P. M. Watkins, Elemer Nagy, M. Wunsch, R. J. Cashmore, Fridolin Dittus, V.V. Bryzgalov, D. Axen, Stephane Jezequel, Tomas Davidek, Edward Diehl, D. Breton, Shlomo Dado, B. Nicquevert, Bengt Lund-Jensen, L. Gustafsson, A. N. Sissakian, B. G. Pope, Daniel Lellouch, Laurent Vacavant, K. Hashemi, R. Beccherle, A.M. Lee, J. Fent, H. Schuijlenburg, A. Onofre, J. M. Crespo, M. Cambiaghi, T. Hansl-Kozanecka, V. V. Tokmenin, Andreas Petridis, M. Cailles, Anna Zuzana Dubnickova, Vitaliano Chiarella, H. A. Neal, Y. Iwata, K. Zitek, A. Perus, D. Bintinger, H.J. Rzayev, J. Ludvig, M. L. Ferrer, Henry Lubatti, Alexi Gongadze, Giovanni Darbo, P. N. Ratoff, J. F. Martin, D. Fasssouliotis, Paolo Camarri, Stefan Tapprogge, J. Vanko, A. Maio, Cheng Chen, Sylvain Tisserant, Sk Noor Alam, S. Rizek, S. Cologna, Yu. Gouz, A. V. Akimov, A. Artamonov, Jolanta Olszowska, D. Manjavidze, Andrej Filipcic, B. Rolker, Georges Azuelos, Alberto Aloisio, Krzysztof Piotrzkowski, A. Greenall, H. Groenstege, C. Mayri, V. M. Malyshev, Helmut Vincke, Barry King, F. Alessandria, B. Thooris, J. Drees, I. O. Skillicorn, Z. Metreveli, Veljko Radeka, Thomas Trefzger, T. Liu, P. Rosinsky, H. Wahlen, J. Proudfoot, V. Snyatkov, D.G. Ebling, J. Ludwig, Lidia Smirnova, Laurent Chevalier, R. Arsenescu, A. Tchountonov, I. Tsoukerman, Javier Lozano, Ian Hinchliffe, A. Di Ciaccio, C. Hebrard, Evgeny Starchenko, K. Runge, T. Dubbs, B. Athar, A. Airapetian, W. Heubers, Z. Khorguashvili, A. Chekhtman, K. Mahboubi, J. Silva, Kiyotomo Kawagoe, M. Kucera, G. Hughes, Bianca Osculati, V. Grabsky, R. Yoshida, J.L. Beney, R. E. Hughes-Jones, Ryuichi Takashima, M. Jirina, M. Mencik, W. Ockenfels, F. Gianotti, N. D. Topilin, N. A. McCubbin, V. Soergel, K. Pretzl, B. Zhang, Martin Hoeferkamp, Alexander Borissov, Evangelos Gazis, S.C. Timm, I.E. Chirikov-Zorin, Petr Tas, S. H. Oh, S. Leven, Alan Poppleton, J. Weichert, R. Tirler, S. A. Robins, Yoshio Arai, Claude Guyot, I. Stekl, F. Kong, Bertrand Laforge, K. H. Becks, Leonardo Paolo Rossi, A. Liolios, E. Marschalkowski, John H. L. Hansen, P. Schwemling, S. Kullander, V. Kovtun, Marina Cobal, Oleg Fedin, O. 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Bugge, Abdeslam Hoummada, B. Gastineau, G. G. Hanson, S. Tatsis, B. McCarthy, L. Topchishvili, J. Damet, G.G.G. Massaro, Y. Pabot, B. Schoefer, R. A. Richards, B. Yu, J. Grunhaus, C. De La Taille, G. Bachy, A. Dos Anjos, G.J. Tappern, L. Xue, Elizabeth Gallas, A. B. Fenyuk, Halina Abramowicz, Cristian Stanescu, D. Attree, Ovsat Abdinov, Marko Mikuz, G. F. Susinno, N. Lupu, B. Alikov, T. J. Brodbeck, Claudio Luci, M. Mur, A. Soldatov, S. Los, R. Boyd, M. L. Andrieux, J. Freestone, Hans Peter Beck, W.W. Armstrong, A. Akhoundov, M. A. Shupe, P.G. Bright-Thomas, V. Shigaev, D. Hauff, M. Qi, R. Gomes, F. Machefert, A. V. Pleskach, Ch. Guicheney, A. Gazizov, G.G. Stairs, V.D. Khovansky, A. Khelashvili, R. Van Berg, C. Daum, E. Vernay, T. Del Prete, John Rutherfoord, Massimo Caccia, P. R. Norton, V. Kozlov, Maria Curatolo, V. Khomoutnikov, S. Tokar, P. D. Grannis, V. Zmouchhko, Ehud Duchovni, Vladimir Peshekhonov, P. Coe, José Bernabéu, M. Roney, A. Seiden, Wolfgang Walkowiak, A. Nadtochy, M. Deile, B.F. Wadsworth, O. Kuznetsov, Paolo Musico, Helmut Wolters, S. Lauxtermann, C. Weaverdyck, Peter Schacht, Y. Zolnierowski, V. Kalinichenko, J. Soukup, R. Gurin, Filippo Ceradini, Manolis Dris, B. Vuandel, S. Chouridou, M. Treichel, S. Berglund, Nicolas Ellis, M. Napolitano, Jorge Gomes, Michael Haney, A. T. Doyle, L. Labarga, N. Giokaris, S. J. Hillier, F. Hakl, Satoshi Tanaka, Andrei Micu, António Amorim, C. Rondot, J. Teiger, Srinivasan Rajagopalan, V.V. Tikhonov, D. Burckhart, A. Chilingarov, Irene Vichou, B. A. Dolgoshein, Leanne P. Guy, M. Vanickova, L.J. Carroll, W. Sippach, G. J. Bobbink, M. S. Dixit, Francisco Camarena, V. Medvedev, Yann Coadou, G. Ciapetti, G. Yarygin, Laurent Serin, John Hill, Alain Bellerive, L. Nodulman, A. Le Coreller, Igor Soloviev, Venetios Polychronakos, Gregor Kramberger, J. Pinhao, J. M. Maugain, Gary Drake, Anatoli Romaniouk, Horst Severini, Susumu Terada, Andreas Kugel, P.A. Fischer, M.V. Castillo, K. Amako, Y. Ermoline, J. Bohm, L. Miralles, R. Cherkaoui, Vyacheslav Klyukhin, B.J. Green, François Fleuret, A. B. Wicklund, Hubert Kroha, P. Karst, Asunción Moreno, M. I. Gostkin, E. Chesi, G. J. Feldman, S. Protopopescu, N. Seguin-Moreau, C. Girard, X. Meng, Chiara Roda, J. Bystricky, M. Leltchouk, S. Lami, J. Thion, B. Hallgren, A. Shikanyan, D.C. Rahm, Dominique Durand, S.N. Tovey, K. Soustruznik, S. Kashigin, S. Golubykh, E. Ros, A.B. Erasov, Fr Pastore, A. Batrakov, Kevin Einsweiler, O. Dorholt, I.L. Pisarev, Yu M. Sviridov, L. Koepke, N. Kundu, P. Weilhammer, A. Khasanov, V. Paschhoff, H. M. Braun, Hiroyuki Iwasaki, J.C. Pena, S. Pier, T.R. McMahon, F. Vales, Dorothee Schaile, R. Ball, J. N. Jackson, Per Werner, R. Irsigler, Genady Gavrilov, R.L. Wastie, D.E. Baynham, I.J. Scott, W. Kittel, Y. Zamora, V. Kravtsov, I. Valin, S. Jagielski, Allan Hallgren, R. J. Homer, Antonio Baroncelli, Ulrich Landgraf, Yu.V. Gilitsky, A. Shalyugin, G. W. Brandenburg, Aston Komar, F. Podlyski, L. Shaver, J-C. Clemens, J-P. Richer, B. Sopko, A. I. Kononov, Stefan Valkar, H. Cunitz, Y. Kulchitsky, P. Perrin, Lorne Levinson, Phillip Gutierrez, I. Wilhelm, J. Knobloch, E. Fokitis, B. Esposito, Anna Kaczmarska, M. H. Lehto, Dusan Bruncko, M. Postranecky, Mark Hatch, V.G Ivochkin, V. Rumyantsev, A. J. Lankford, J. Wuestenfeld, D.V. Camin, G. Renzoni, V. Golikov, T. Kuhl, A. Cavallari, Eugene P. Gross, R. Barratt, Z. Quian, O. Palamara, J.B. Lane, S. Malyukov, A. Hacinliyan, Serban Constantinescu, Adele Rimoldi, Richard Nickerson, S. Kotov, D. Tompkins, R. Fakhroutdinov, C. Lasseur, Georgios Stavropoulos, A. Akhmedov, Y. Velikzhanin, G. A. Smith, Marcin Wladyslaw Wolter, B. Madeyski, S. Schael, Edoardo Gorini, Houlden, B. Martin, S. Yu. Sivoklokov, P. Paschalias, A. Ostankov, D. Martin, C. Petridou, C. Bouzakis, M. Rouger, M. Nozaki, Ian Dawson, J. Soderqvist, M.I. Levchuk, Juan Bautista Roldán, Ulf Mjörnmark, C. Havet, B. Stugu, Mikhail Ignatenko, Carlos Lacasta, H. Higon, W.D. Lu, Baturitsky, Francis Anghinolfi, Monika Wielers, C. F. Feng, W. Blum, Elzbieta Richter-Was, D. R. Rust, Martin Aleksa, F.T. Khalilzade, Josue J. Lopez, G. Rudolph, N. Bingefors, U. Karshon, Tiefu Zhao, B. Kocper, J. Siegrist, I. Savin, M. J. Costa, C. Yanagisawa, H. F. Hoffmann, Luis Hervas, J. Schaapman, O. Le Dortz, H. Weerts, Francois Vazeille, J. McDonald, A. Gordeev, Saverio D'Auria, O. Solovianov, E. Arik, C. Couyoumtzelis, Alexey Dudarev, E. C. Katsoufis, P. Modesto, Pierre Petroff, C. Bromberg, S. Zimin, Silvia Resconi, A. Liparteliani, R. Chechik, Michael L. Barnett, Valery I. Telnov, R. D. Kass, C. H. Daly, C. Grigson, L. Santi, I. Lehraus, J. Colas, Marzio Nessi, Hiroto Kambara, S. Vorozhtsov, R. Ayad, X.Q. Yu, R. Davis, W. L. Ebenstein, F. Fares, D. Nicod, Ralph Bock, Andrey Ostapchuk, Y. V. Grishkevich, V. Batarin, G. Eigen, Yu.M. Antipov, B. Sundal, P. Gauzzi, Emilio Petrolo, J. Belorgey, F. K. Loebinger, P.S.L. Booth, S. N. Shilov, Z. Trka, F.L. Linde, Gideon Bella, S. Backovic, Peter Sherwood, D. Mercer, Eduard Kladiva, A. Farilla, Y. Unno, Tohru Takeshita, Alexander Mann, O. Gildemeister, Vicente González, S. P. Denisov, S. Behrends, A. Henriques, M. Y. Kazarinov, F. Grancagnolo, D. Sauvage, M. Abolins, Göran Jarlskog, S. Ruehl, D. Myers, G. Kantardjian, Sergey Chekulaev, F. Bergsma, O. Cakir, A. Fallou, B. Epp, Ph. Cros, Joseph A. Paradiso, F. Giancomini, Igor Mandić, P. Jovanovic, D. Hill, M. Zamani, D.E. Dorfan, A. Kandasamy, B. Dick, E. Eisenhandler, T. Kurca, S. Petrera, S. Alforque, Davide Costanzo, M. Nagamatsu, J.D. Richardson, V. Tcherniatine, E. Kuper, W. Iwanski, J. Ota, K. Jelen, J. A. Bogaerts, Jason Lea Oliver, G. Aielli, G. Tong, V. Epchtein, L. La Rotonda, M. Yakimenko, Mauro Citterio, Emmerich Kneringer, Nikolay Nikitin, Michel Gouanère, Mihai Niculescu, W. E. Cleland, Donatella Cavalli, P. Evtukhovich, P. Haridas, Rudiger Voss, F. Etienne, G. Lenzen, P. E. L. Clarke, Peter Loch, D. Dzahini, G.L. Bashindjagian, Mario David, N. Felt, E. L. Barberio, R. Fedorchuk, W. Mohr, T. Schmid, V. Vuillemin, Didier Lacour, P. Grenier, D. La Marra, L. Mandelli, A.N. Larichev, T. K. Ohska, G. Mikenberg, C. Schumacher, M. J. Woudstra, S. Kiourkos, H. G. Moser, V.V. Sytnik, S. Vanini, Fred Wickens, Shawn McKee, J. Del Peso, P A. Delpierre, R.W. Dobinson, R. von Boehn-Bucholz, J. Sodomka, N. Sasao, F. Hartjes, R. Berthier, P.A. Cooke, H. Chakir, M. Merkin, J. Spelt, P. Stavina, V. Maximov, R.R. Mekhdiyev, M. Sessler, Jörgen Sjölin, P. Ponsot, E. Badescu, L. Vassilieva, J. Ulrichs, A. Pilling, D.V. Amelin, J. Wotschack, R. Nacasch, G. H. Trilling, D. Stephani, Richard C. Jared, Howard Gordon, F. Hogbe-Nlend, P. Pailler, Werner Riegler, R.A. Madsen, Jinan, I.G. Knowles, S. Sultansoy, Craig Blocker, D. Cauz, Ronald E. Miller, Gregor Herten, Miriam Lucio Martinez, P. Delebecque, A. Mirea, Chiara Meroni, M. P. J. Landon, Jose Flix, A. Joudon, Stefan Simion, Peter Kluit, J. E. Pilcher, Matteo Cavalli-Sforza, Alevtina Shmeleva, A. Klovning, Yona Oren, Daniel Fournier, Vladimir Cindro, H. Tischhauser, R. P. Thun, M. Moynot, Gibson, R. Wunstorf, Viktor Kramarenko, E. Gornicki, V. J. Guarino, J-Y. Hostachy, Helmuth Spieler, J. Bremer, J. Rabel, Paolo Bagnaia, A.M. Moiseev, Raimund Ströhmer, V. Simak, and A. T. Goshaw
Subjects: Physics, Nuclear physics, Particle physics, Atlas (topology), Atlas detector, Bibliography, Drell–Yan process, Technicolor, Supersymmetry, Particle detector, Technical design
Published: 1999
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37. Scanning of irradiated silicon detectors using $\alpha$ particles and low energy protons

Author: Vit Vorobel, M Šiňor, J Švejda, J Konı́ček, V Linhart, Gianluigi Casse, M Glaser, Z Doležal, P Roy, J.J. Mares, S Pospı́šil, F Lemeilleur, C. Leroy, Zdenek Kohout, B. Sopko, and I. Wilhelm
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, Detector, Physics::Medical Physics, chemistry.chemical_element, Biasing, Alpha particle, Fluence, chemistry, Particle, Irradiation, Atomic physics, Detectors and Experimental Techniques, Instrumentation, Diode
Abstract: In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC’) and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence.
Published: 1999

38. Comparison of radiation damage in silicon induced by proton and neutron irradiation

Author: Stephen Watts, F. Lemeilleur, A. Zanet, Arie Ruzin, Gianluigi Casse, and Maurice Glaser
Subjects: Nuclear and High Energy Physics, Health Physics and Radiation Effects, Materials science, Proton, Silicon, business.industry, Physics::Instrumentation and Detectors, technology, industry, and agriculture, chemistry.chemical_element, equipment and supplies, Crystallographic defect, Semiconductor, Nuclear Energy and Engineering, chemistry, Impurity, Radiation damage, Optoelectronics, Neutron, High Energy Physics::Experiment, Electrical and Electronic Engineering, business, Radiation hardening
Abstract: The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. (16 refs).
Published: 1999

39. Study of charge Transport in Silicon Detectors: Non-Irradiated and Irradiated

Author: E. Grigoriev, Gianluigi Casse, F. Lemeilleur, Maurice Glaser, Claude Leroy, and P. Roy
Subjects: Nuclear and High Energy Physics, Materials science, Silicon, business.industry, Physics::Instrumentation and Detectors, Physics::Medical Physics, Detector, chemistry.chemical_element, Electron, Fluence, Atomic and Molecular Physics, and Optics, Planar, chemistry, Optoelectronics, Charge carrier, High Energy Physics::Experiment, Irradiation, Atomic physics, Detectors and Experimental Techniques, business, α particles
Abstract: The electrical characteristics of silicon detectors (standard planar float zone and MESA detectors) as a function of the particle fluence can be extracted by the application of a model describing the transport of charge carriers generated in the detectors by ionizing particles. The current pulse response induced by $\alpha$ and $\beta$ particles in non-irradiated detectors and detectors irradiated up to fluences $\Phi \approx 3 \cdot 10^{14}$ particles/cm$^2$ is reproduced via this model: i) by adding a small n-type region 15 $\mu$m deep on the $p^+$ side for the detectors at fluences beyond the n to p-type inversion and ii) for the MESA detectors, by considering one additional dead layer of 14 $\mu$m (observed experimentally) on each side of the detector, and introducing a second (delayed) component to the current pulse response. For both types of detectors, the model gives mobilities decreasing linearily up to fluences of about $5 \cdot 10^{13}$ particles/cm$^2$ and converging, beyond, to saturation values of about 1050 cm$^2$/Vs and 450 cm$^2$/Vs for electrons and holes, respectively. At a fluence $\Phi \approx 10^{14}$ particles/cm$^2$ (corresponding to about ten years of operation at the CERN-LHC), charge collection deficits of about 14\% for $\beta$ particles, 25\% for $\alpha$ particles incident on the front and 35\% for $\alpha$ particles incident on the back of the detector are found for both type of detectors.
Published: 1998

40. Performance of 0.5 x 10(6) sensitive elements pixel telescope in the WA97 heavy ion experiment at CERN

Author: S. Simone, M. Campbell, Vaclav Vrba, Federico Antinori, S. Di Liberto, Eugenio Cantatore, M. Luptak, G.F. Segato, Karel Safarik, Kevin M. Smith, Rupert Leitner, F. Krummenacher, L. Lopez, W. Snoeys, E. Quercigh, Erik H.M. Heijne, M. G. Catanesi, Stanislav Pospisil, D. Elia, F. Pengg, J. Ridky, J.J. Jaeger, W. Beusch, Saverio D'Auria, V. Lenti, K. Knudson, J. C. Lassalle, Giovanni Darbo, F. Pellegrini, C. DaVia, M. Morando, S. Saladino, I. Králik, F. Lemeilleur, Dario Barberis, Paolo Martinengo, M. Letheren, A. Munns, Franco Meddi, A. Jacholkowski, Demetrios Loukas, D. Di Bari, G. Tomasicchio, L. Scharfetter, T. Gys, H. Beker, V. Manzari, Pierre Jarron, K. H. Becks, W. Klempt, E. Chesi, Leonardo Paolo Rossi, Håvard Helstrup, G. Meddeler, J. Kubasta, P. Burger, and Jan Jakubek
Subjects: Physics, Nuclear and High Energy Physics, Large Hadron Collider, Pixel, Detector, Particle detector, law.invention, Semiconductor detector, Telescope, Nuclear physics, Effective mass (solid-state physics), law, Measuring instrument, Instrumentation
Abstract: A silicon pixel telescope, consisting of seven planes for a total of about 0.5 M sensor elements with size of 75 μ m × 500 μ m, was successfully employed in the WA97 experiment at CERN. We describe here the overall performance of the detector; we also report some early results from PbPb and p-Pb runs, showing the powerful capability to measure particle momenta and the effective mass of hyperons with a good resolution.
Published: 1997

41. Study of charge collection and noise in non-irradiated and irradiated silicon detectors

Author: I Trigger, B. Dezillie, Maurice Glaser, Claude Leroy, S.J. Bates, and F. Lemeilleur
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, Detector, Physics::Medical Physics, chemistry.chemical_element, Electron, Fluence, Signal, chemistry, Orders of magnitude (time), Irradiation, Atomic physics, Detectors and Experimental Techniques, Instrumentation, Noise (radio)
Abstract: The large collection and noise were studied in non-irradiated and irradiated silicon detectors as a function of temperature (T), shaping time (0) and fluence , up to about 1,2 x 10(14) protons per cm2 for minimum-ionizing electrons yielded by a 106 Ru source. The noise of irradiated detectors is found to be dominted for short shaping times (¾50ns) by a series noise compo- nent, while for longer shaping times (80ns) a parallel noise component (correlated with the reverse current) prevails. For non-irradiated detectors, where the reverse current is three orders of magnetude smaller compared with irradiated detectors, the series noises dominates over the whole range of shaping times investigated (20-150ns). A signal degradation is observed for irradiated detectors. However, the signal ca be distinguished from noise, even after a fluence of about 1.2 x10(14) protons per cm2, at a temperature of 6øC and with a shaping time tipical of rge LHC inter-bunch crossing time (20-30ns). The measurements of the signal as a function of voltage shows that irradiated detectors depleted at 50% of the full depletion voltage can still provide a measurable signal-to-noise ratio.
Published: 1996

42. Beam test results of a Shashlik calorimeter in a high magnetic field

Author: A. Karar, P. Aspell, V. Vasilchenko, Kajari Mazumdar, David Ja Cockerill, P. Bloch, Y. Kozlov, J.F. Connolly, Fabien Dorchies, R. Loos, P. Moissenz, N. Zamiatin, C. Gregory, Yu. Protopopov, J. Badier, P. Spiridonov, P. Bordalo, V. Soushkov, I. Cheremukhin, Nikola Godinovic, E. Zubarev, F. Lemeilleur, Gobinda Majumder, A. K. Skasyrskaya, I. Soric, Y. Musienko, T. Moulik, S. K. Gupta, S. N. Ganguli, A. Sidorov, Manas Maity, Jean-Charles Vanel, R. Grabit, P. Busson, Pascal Bruel, L. Denton, V. V. Popov, E. Clayton, Joao Varela, R. Djilkibaev, S. N. Gninenko, Igor Golutvin, A. Marchioro, Tejinder Virdee, A. Egorov, D. B. Miller, V. Obraztsov, A. Ostankov, Pierre Jarron, R. Tanaka, E. Guschin, S. R. Chendvankar, P. Manigot, O. Ferreira, L. Dobrzynski, Claude Charlot, V. Rykalin, E. Rosso, S. Sergueev, K. Kloukinas, A. Busata, Ivica Puljak, S.J. Bates, A. Gurtu, S. Bityukov, I. Semenyuk, Christopher Seez, S. Ramos, European Organization for Nuclear Research (CERN), CERN [Genève], Laboratoire de physique corpusculaire de Caen (LPCC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Laboratoire Leprince-Ringuet (LLR), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Laboratoire pour l'utilisation des lasers intenses (LULI), Université Pierre et Marie Curie - Paris 6 (UPMC)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institute of Applied Physics of RAS, Russian Academy of Sciences [Moscow] (RAS), Normandie Université (NU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], Physics, Nuclear and High Energy Physics, Particle physics, Calorimeter (particle physics), 010308 nuclear & particles physics, business.industry, Physics::Instrumentation and Detectors, Detector, Electron, 01 natural sciences, Signal, Magnetic field, Optics, 0103 physical sciences, Cathode ray, High Energy Physics::Experiment, Detectors and Experimental Techniques, CMS, electromagnetic calorimeter, preshower, 010306 general physics, business, Instrumentation, ComputingMilieux_MISCELLANEOUS, Beam (structure), Shashlik
Abstract: Shashlik calorimeter prototypes equipped with preshower detector have been tested in 3 T magnetic field with electron beam at CERN-SPS. The signal from electrons increases as much as 11% at 3 T magnetic field. No significant deterioration on the energy resolution as well as the preshower detector performance have been observed.
Published: 1996

43. Studies on a 300 k pixel detector telescope

Author: S. Simone, Karel Safarik, Kevin M. Smith, Rupert Leitner, H. Beker, Thierry Gys, Domenico Elia, Pierre Jarron, Peter Middelkamp, J.J. Jaeger, S. Di Liberto, Giovanni Darbo, Jan Jakubek, E. Chesi, Eugenio Cantatore, Stanislav Pospisil, M. Morando, I. Kralik, Franco Meddi, P. Burger, V. Lenti, K. Knudson, M. Luptak, G.F. Segato, K. H. Becks, E. Quercigh, A. Jacholkowski, Dario Barberis, G. Meddeler, J. Kubasta, C. DaVia, Demetrios Loukas, M. Letheren, Saverio D'Auria, F. Pellegrini, Federico Antinori, D. Di Bari, W. Klempt, J. C. Lasalle, A. Munns, Erik H.M. Heijne, Paolo Martinengo, F. Pengg, F. Krummenacher, L. Lopez, Leonardo Paolo Rossi, Håvard Helstrup, Walter Snoeys, F. Lemeilleur, L. Scharfetter, M. Campbell, J. Ridky, Vaclav Vrba, M. G. Catanesi, and W. Beusch
Subjects: Physics, Nuclear and High Energy Physics, Large Hadron Collider, Pixel, Physics::Instrumentation and Detectors, business.industry, Detector, Tracking (particle physics), Particle detector, Semiconductor detector, law.invention, Telescope, Optics, law, business, Instrumentation, Beam (structure)
Abstract: Four silicon pixel detector planes are combined to form a tracking telescope in the lead ion experiment WA97 at CERN with 290 304 sensitive elements each of 75 μm by 500 μm area. An electronic pulse processing circuit is associated with each individual sensing element and the response for ionizing particles is binary with an adjustable threshold. The noise rate for a threshold of 6000e− has been measured to be less than 10−10. The inefficient area due to malfunctioning pixels is 2.8% of the 120 cm2. Detector overlaps within one plane have been used to determine the alignment of the components of the plane itself, without need for track reconstruction using external detectors. It is the first time that such a big surface covered with active pixels has been used in a physics experiment. Some aspects concerning inclined particle tracks and time walk have been measured separately in a beam test at the CERN SPS H6 beam.
Published: 1996

44. Damage induced by pions in silicon detectors

Author: C. Furetta, C. Soave, S.J. Bates, M. Glaser, E. Leon-Florian, and F. Lemeilleur
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Nuclear Theory, Detector, chemistry.chemical_element, Resonance, Atomic and Molecular Physics, and Optics, Nuclear physics, Momentum, Pion, chemistry, Neutron, Irradiation, Atomic physics, Detectors and Experimental Techniques, Nuclear Experiment
Abstract: High-resistivity, ion-implanted silicon detectors have been irradiated with positive and negative pions up to fluences of 10 14 cm ‐2 and 10 13 cm ‐2 , respectively. The energy dependence of the leakage-current damage constant around the Δ resonance is presented. Studies of the leakagecurrent damage constants (corrected for self-annealing and the long-term value) and the evolution of the depletion voltage with time show pions of momentum 350 MeV/c to be 20‐25% more damaging than 1 MeV neutrons. Charge-collection measurements are also presented that show no more degradation in efficiency than previously measured for 1 MeV neutrons and 24 GeV/c protons.
Published: 1995

45. Experience with a 30 cm2 silicon pixel plane in CERN experiment WA97

Author: W. Beusch, R. Arnold, K. Safarik, S. Simone, M. Morando, H. Verweij, P. Middelkamp, Giorgio Maggi, Paolo Martinengo, D. Elia, P. Burger, S. Di Liberto, G.F. Segato, J. M. Heuser, Pierre Jarron, E. Quercigh, M. G. Catanesi, F. Pellegrini, Giovanni Darbo, Thierry Gys, Federico Antinori, Milos Lokajicek, E. Chesi, Michael Campbell, Vaclav Vrba, P. Musico, A. Menetrey, A. Munns, C. Neyer, Marco Pallavicini, A. Jacholkowski, Erik H.M. Heijne, Eugenio Cantatore, F. Pengg, H. Beker, P. Tempesta, C. Da Via, Rupert Leitner, D. Di Bari, Susanne Kersten, Dario Barberis, J. L. Guyonnet, Leonardo Paolo Rossi, M. Letheren, Håvard Helstrup, Franco Meddi, Stanislav Pospisil, F. Lemeilleur, G. Viertel, V. Lenti, F. Krummenacher, L. Lopez, G. Meddeler, M. Lovetere, J. Ridky, Institut de Recherches Subatomiques (IReS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Cancéropôle du Grand Est-Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS), and WA97
Subjects: Physics, Nuclear and High Energy Physics, Large Hadron Collider, Silicon, Spectrometer, Physics::Instrumentation and Detectors, Detector, chemistry.chemical_element, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], Tracking (particle physics), Particle detector, Semiconductor detector, law.invention, Nuclear physics, Telescope, chemistry, law, Nuclear Experiment, Instrumentation
Abstract: A multi-chip, large area hybrid silicon pixel detector has been integrated in a particle physics experiment for the first time. The plane had 72K 75 μ m × 500 μ m sensor elements, covering a total area of about 30 cm 2 . It was constructed and characterized in a collaboration between heavy-ion experiment WA97 and R&D project RD19. Several such planes will be incorporated in a hyperon telescope, in order to improve tracking in the high multiplicity environment of central lead-lead collisions at the SPS. Results on the characterization of this detector in a proton beam at the Omega spectrometer at CERN are presented and discussed.
Published: 1995

46. CONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTOR

Author: Eugenio Cantatore, Leonardo Paolo Rossi, S. Saladino, P. Burger, M. Luptak, Haavard Helstrup, G.F. Segato, F. Krummenacher, L. Lopez, J. M. Heuser, E. Quercigh, Dario Barberis, Saverio D'Auria, S. Simone, M. Morando, Rupert Leitner, Ivan Kralik, S. Di Liberto, H. Beker, Karel Safarik, W. Snoeys, J. C. Lasalle, Stanislav Pospisil, A. Jacholkowski, P. Middelkamp, Paolo Martinengo, Vaclav Vrba, D. Elia, W. Beusch, A. Menetrey, Giovanni Darbo, P. Musico, V. Lenti, Federico Antinori, E. Chesi, M. Campbell, Erik H.M. Heijne, Milos Lokajicek, G. Stefanini, W. Klempt, F. Pellegrini, Franco Meddi, M. G. Catanesi, A. Munns, C. Da Via, Giorgio Maggi, T. Gys, D. Di Bari, Pierre Jarron, F. Lemeilleur, and J. Ridky
Subjects: Physics, Nuclear and High Energy Physics, Signal processing, Pixel, Silicon, business.industry, Detector, chemistry.chemical_element, Particle detector, Semiconductor detector, Nuclear Energy and Engineering, CMOS, chemistry, Nuclear electronics, Optoelectronics, Electrical and Electronic Engineering, business
Abstract: A silicon pixel detector, developed in RD19, and consisting of 4 planes, /spl sim/30 cm/sup 2/ each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300000 and each cell, 75 /spl mu/m/spl times/500 /spl mu/m, contains a complete signal processing chain. Overall dead area is less than 3%. >
Published: 1995

47. Recent results of radiation damage studies in silicon

Author: F. Anghinolfi, S. N. Tovey, A. G. Clark, G. Gorfine, H. Feick, H. Kambara, E. Fretwurst, C. Gossling, J.C. Santiard, D. J. Munday, Pierre Jarron, G. Lindström, G. F. Moorhead, R.A. Bardos, A. Rolf, S. Pilath, A. Chilingarov, Maurice Glaser, Erik H.M. Heijne, F. Lemeilleur, B. Lisowski, A. Ciasnohova, G. N. Taylor, T. Schulz, S. J. Bates, Michael Andrew Parker, and R. Bonino
Subjects: Physics, Nuclear and High Energy Physics, Large Hadron Collider, Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Radiation, Semiconductor detector, chemistry, Radiation damage, Optoelectronics, Neutron, Irradiation, Detectors and Experimental Techniques, business, Instrumentation
Abstract: The RD2 Collaboration is making preliminary studies on a silicon tracking detector for use at the LHC. It is a priority that this detector should withstand the high level of radiation to be expected for LHC operation. Therefore systematic studies on the change of the detector performance due to radiation damage have been made, or are in progress. Well established results on neutron related damage at room temperature have been extended to lower temperatures, as foreseen for operation at LHC. For comparison proton damage studies have also been started. The detector properties under investigation include the reverse current, the depletion voltage and the charge collection efficiency. With a compressed 10 year LHC operational scenario we have successfully checked the ability of silicon detectors to survive the period influences of high fluence irradiation and subsequent annealing.
Published: 1994

48. First operation of a 72-k element hybrid silicon micropattern pixel detector array

Author: S. Simone, C. Da Via, C. C. Enz, M. Glaser, Susanne Kersten, V. Lenti, A. Jacholkowski, G. Viertel, P. Musico, M. Lo Vetere, F. Krummenacher, L. Lopez, Marco Pallavicini, Domenico Elia, Paolo Martinengo, Pierre Jarron, F. Pengg, J. M. Heuser, P. Middelkamp, Giorgio Maggi, G.F. Segato, R. Hurst, E. Quercigh, Rupert Leitner, Thierry Gys, Leonardo Paolo Rossi, C. Neyer, Håvard Helstrup, M. Morando, H. Verweij, Dario Barberis, F. Pellegrini, H. Beker, Michael Campbell, M. Letheren, Karel Safarik, P. Burger, A. Munns, F. Lemeilleur, G. Meddeler, A. Menetrey, P. Tempesta, J. L. Guyonnet, R. Arnold, Domenico Di Bari, Giovanni Darbo, E. Chesi, Federico Antinori, Erik H.M. Heijne, Stanislav Pospisil, Franco Meddi, J. Ridky, Milos Lokajicek, M. G. Catanesi, W. Beusch, Vaclav Vrba, and S. Di Liberto
Subjects: Physics, Nuclear and High Energy Physics, Silicon, Pixel, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Biasing, Integrated circuit, Noise (electronics), law.invention, Semiconductor detector, Optics, chemistry, law, Detectors and Experimental Techniques, business, Instrumentation, Beam (structure)
Abstract: We have constructed and tested silicon pixel detector arrays of 96 × 378 (36 288) sensor elements with 75 μm × 500 μm area. The low-noise signal processing circuit associated with each element occupies an identical area on a bump-bonded readout chip. The pixel cell response for ionizing particles is binary with an adjustable threshold between 4000 e − and 15 000 e − . Single chips, the array of 6 ladders and a double array have been characterized in particle test beams and in the Omega experiment WA97 at CERN. The two arrays together, staggered by ∼ 4 mm cover hermetically a 53 mm × 55 mm area with 72 576 pixels. The proportion of properly functioning pixels was 98% in the first 36 k pixel array and 80% in the second one. The ∼ 1% “always-on” pixels could be masked electronically. After masking the rate of “spurious noise hits” was −8 of the identified particle hits while with beam off no hits at all were recorded With a beam trigger most events consisted of a single cluster with a single hit. At the 8000 e − threshold an efficiency > 99% was measured. Tracks were reconstructed with a precision of 22 μm. The proportion of double hits (∼ 11%) depends only slightly on threshold and detector bias voltage, and for these double hits a precision of 10 μm on the particle position was obtained.
Published: 1994

49. Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors

Author: F. Lemeilleur, Erik H.M. Heijne, Pierre Jarron, E. Occelli, J. Rioux, and Maurice Glaser
Subjects: Nuclear and High Energy Physics, Materials science, Physics::Instrumentation and Detectors, Astrophysics::High Energy Astrophysical Phenomena, Physics::Medical Physics, Doping, Analytical chemistry, Electron, Fluence, Atomic and Molecular Physics, and Optics, Neutron flux, Electric field, Neutron, Irradiation, Atomic physics, Detectors and Experimental Techniques, Voltage
Abstract: Ion-implanted n-type and p-type detectors have been irradiated with neutrons of ∼ 1 MeV up to a fluence of 1014 cm−2. From I-V and C-V measurements the reverse current and the full depletion voltage have been determined at successive levels of neutron fluence. The effective doping concentration versus fluence and the reverse current damage coefficient are presented. Room temperature annealing after the irradiation is discussed. At successive levels of neutron fluence, the shape of the current pulse induced by relativistic electrons and α particles has been studied using a fast current amplifier. For a detector irradiated up to 1.1 1014 n cm−2 and biased at ∼ 20% above the depletion voltage, the charge collection deficit for ∼ 2 MeV electrons is
Published: 1992

50. A 1006 element hybrid silicon pixel detector with strobed binary output

Author: Guido Tonelli, N. G. Redaelli, P. Delpierre, R. Potheau, M. Glaser, Christian Enz, J.J. Jaeger, Ettore Focardi, A. Munns, M.C. Habrard, S. Simone, E. Chesi, F. Pengg, M. Pindo, G.F. Segato, Francis Anghinolfi, E. Quercigh, J. Waisbard, Y. Gally, M. Morando, V. Lenti, H. Verweij, B. Dierickx, R. Hurst, P. Aspell, T. Gys, G. Vegni, F. Forti, G. Ottaviani, Francois Krummenacher, V. Manzari, L. Hermans, D. Di Bari, D. Sauvage, J.C. Clemens, Leonardo Paolo Rossi, P. Burger, G. Viertel, I. Debusschere, Pierre Jarron, G Vanstraelen, M. Cohen Solal, F. Pellegrini, F. Lemeilleur, C. Boutonnet, W. Beusch, F. Navach, G. Meddeler, F. Nava, M. Campbell, C. Neyer, K. Bass, P. Inzani, G. Stefanini, Cor Claeys, R. Perego, L. Bosisio, Erik H.M. Heijne, Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), RD19, and Damoiseaux, Magali
Subjects: Nuclear and High Energy Physics, Integrated circuit, 7. Clean energy, 01 natural sciences, Particle detector, law.invention, Optics, law, Nuclear electronics, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Electrical and Electronic Engineering, Detectors and Experimental Techniques, 010306 general physics, Physics, Spectrometer, Pixel, 010308 nuclear & particles physics, business.industry, Detector, Electrical engineering, Chip, Semiconductor detector, Nuclear Energy and Engineering, [PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], business
Abstract: An asynchronous version of a binary pixel readabout circuit has been implemented in an array with 16 columns at 500 mu m pitch and 63 rows at 75 mu m pitch. This readabout chip has been bonded with solder bumps to a silicon detector with matching pixel elements. Event information in a pixel can be strobed into a local memory by a trigger signal and subsequently read out. Without a strobe the information is continuously cleared. The complete hybrid detector has been successfully tested with ionizing particles from a radioactive source. Three such devices have been put in the CERN heavy-ion experiment WA94 in the Omega spectrometer, where they recorded particle tracks from high-multiplicity /sup 32/S interactions. Preliminary data indicate a noise of approximately 60 e/sup -/ and a threshold spread of approximately 500 e/sup -/. The timing characteristics are adequate for a fixed-target experiment. >
Published: 1991

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