CONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTOR

Authors :: Eugenio Cantatore
Leonardo Paolo Rossi
S. Saladino
P. Burger
M. Luptak
Haavard Helstrup
G.F. Segato
F. Krummenacher
L. Lopez
J. M. Heuser
E. Quercigh
Dario Barberis
Saverio D'Auria
S. Simone
M. Morando
Rupert Leitner
Ivan Kralik
S. Di Liberto
H. Beker
Karel Safarik
W. Snoeys
J. C. Lasalle
Stanislav Pospisil
A. Jacholkowski
P. Middelkamp
Paolo Martinengo
Vaclav Vrba
D. Elia
W. Beusch
A. Menetrey
Giovanni Darbo
P. Musico
V. Lenti
Federico Antinori
E. Chesi
M. Campbell
Erik H.M. Heijne
Milos Lokajicek
G. Stefanini
W. Klempt
F. Pellegrini
Franco Meddi
M. G. Catanesi
A. Munns
C. Da Via
Giorgio Maggi
T. Gys
D. Di Bari
Pierre Jarron
F. Lemeilleur
J. Ridky
Publication Year :: 1995
Publisher :: IEEE / Institute of Electrical and Electronics Engineers Incorporated:445 Hoes Lane:Piscataway, NJ 08854:(800)701-4333, (732)981-0060, EMAIL: subscription-service@ieee.org, INTERNET: http://www.ieee.org, Fax: (732)981-9667, 1995.
Abstract: A silicon pixel detector, developed in RD19, and consisting of 4 planes, /spl sim/30 cm/sup 2/ each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300000 and each cell, 75 /spl mu/m/spl times/500 /spl mu/m, contains a complete signal processing chain. Overall dead area is less than 3%. >

Subjects :: Physics
Nuclear and High Energy Physics
Signal processing
Pixel
Silicon
business.industry
Detector
chemistry.chemical_element
Particle detector
Semiconductor detector
Nuclear Energy and Engineering
CMOS
chemistry
Nuclear electronics
Optoelectronics
Electrical and Electronic Engineering
business

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