398 results on '"F. Demichelis"'
Search Results
2. Effect of inoculum origin and substrate-inoculum ratio to enhance the anaerobic digestion of organic fraction municipal solid waste (OFMSW)
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F. Demichelis, T. Tommasi, F.A. Deorsola, D. Marchisio, and D. Fino
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Renewable Energy, Sustainability and the Environment ,Anaerobic digestion ,Inoculum origins ,Substrate inoculum ratio ,Inoculum incubation ,Kinetic evaluation ,Strategy and Management ,Building and Construction ,Industrial and Manufacturing Engineering ,General Environmental Science - Published
- 2022
3. 1390P Circulating tumor DNA (ctDNA) and prognosis with PSMA-targeted radionuclide therapy (TRT)
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M. Sun, C. Thomas, F. Orlando, M. Sigouros, J. Osborne, J. Nauseef, A.M. Molina, C. Sternberg, M. Bissassar, S. Singh, F. Khani, D.M. Nanus, K. Ballman, N. Bander, F. Demichelis, H. Beltran, and S.T. Tagawa
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Oncology ,Hematology - Published
- 2022
4. Investigation of the anaerobic digestion of cosmetic industrial wastes: Feasibility and perspectives
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Marco Chiappero, Maurizio Francesco Eugenio Onofrio, Silvia Fiore, and F. Demichelis
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Environmental Engineering ,Scale-up ,Industrial Waste ,Biogas ,Cosmetics ,Management, Monitoring, Policy and Law ,Methane ,chemistry.chemical_compound ,Bioreactors ,Economic analysis ,Anaerobiosis ,Waste Management and Disposal ,Sewage ,Cosmetic waste ,Pre-treatment ,General Medicine ,Total dissolved solids ,Pulp and paper industry ,Onsite sewage facility ,Refuse Disposal ,Anaerobic digestion ,Food waste ,chemistry ,Food ,Biofuels ,Digestate ,Feasibility Studies - Abstract
This study assessed the anaerobic digestion (AD) of wastes deriving from cosmetics production: sludge from onsite wastewater treatment plant (sWWTP), residues of shampoo/conditioner (RSC) and sludge from mascara production (MS), considered as single substrates and as mixture according to the produced amounts (54 %-wt sWWTP, 31 %-wt RSC, 13 %-wt MS, plus 2 %-wt food waste from the canteen, FW). Total COD (CODT) was 624–1436 g O2/kg VS, while soluble COD was 5–23 %-wt of CODT. AD tests at 35 °C achieved the following biogas yields: 0.10 Nm3/kgvs (70 %-v/v methane) for sWWTP; 0.07 Nm3/kgvs (62 %-v/v methane) for RSC; 0.04 Nm3/kgvs (67 %-v/v methane) for MS. The mixed substrates underwent physico-chemical pre-treatments (thermo-alkaline, TA: 120 min at 50 °C; thermo-alkaline-sonication, TAS: 15 min at 40 kHz and 80 °C, both based on the addition of 0.08 g NaOH per each g of total solid in the substrate), reaching 64–66% disintegration rate, and AD tests (5 %-wt dry substance) at 35 and 52 °C. Biogas yields were (for TA and TAS respectively): 0.22 and 0.20 Nm3/kgVS (62–70% methane); 0.21 and 0.19 Nm3/kgVS (66-66% methane) at 52 °C. At both temperatures, methane yields considerably improved (+71–100%), compared to mixed untreated substrates, and 5-8 %-wt total solids reductions were observed. A technical-economic scale-up assessment completed the research. The energy analysis highlighted the crucial role of TA pre-treatment in achieving the process energetic sustainability. The economic analysis showed that the AD of the considered cosmetic waste could be sustainable anyway, thanks to the savings related to the disposal of the digestate compared to current waste management costs.
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- 2021
5. Assessment of the Treatment Performance of an Open-Air Green Wall Fed with Graywater under Winter Conditions
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Silvia Fiore, F. Demichelis, Ana Galvão, Alice Caruso, Fabio Masi, Joana Pisoeiro, Anacleto Rizzo, Elisa Costamagna, and Fulvio Boano
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Toilet ,Waste management ,treatment ,Reuse ,Greywater ,green wall ,digestive system diseases ,reuse ,fluids and secretions ,Wastewater ,Chemistry (miscellaneous) ,nature-based solution ,Environmental Chemistry ,Chemical Engineering (miscellaneous) ,Environmental science ,graywater ,green wall, graywater, reuse, nature-based solution, treatment ,Green wall ,Water Science and Technology ,Open air - Abstract
Graywater (GW), i.e., the portion of household wastewater that excludes toilet flushes, is an interesting wastewater type because it requires only mild treatment. Green walls have been proposed as ...
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- 2021
6. Characterization of bladder cancer patient-derived organoids and potential application for personalized medicine
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M. Minoli, M. Kiener, T. Cantore, T. Fedrizzi, P. Gasperini, F. Demichelis, G.N. Thalmann, R. Seiler-Blarer, and M. Kruithof-De Julio
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Urology - Published
- 2022
7. Review of biochar role as additive in anaerobic digestion processes
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Ondřej Mašek, Omid Norouzi, Francesco Di Maria, Mingyu Hu, Franco Berruti, Silvia Fiore, F. Demichelis, and Marco Chiappero
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Circular economy ,Renewable Energy, Sustainability and the Environment ,business.industry ,020209 energy ,Anaerobic digestion ,Biochar ,Bioenergy ,Biomass ,waste ,Mature technology ,02 engineering and technology ,Biodegradable waste ,Renewable energy ,Environmental protection ,0202 electrical engineering, electronic engineering, information engineering ,Environmental science ,business - Abstract
Anaerobic digestion (AD) could be considered as a mature technology and nowadays it can still play a pivot role because of the urgent need to provide renewable energy sources and efficiently manage the continuously growing amount of organic waste. Biochar (BC) is an extremely versatile material, which could be produced by carbonization of organic materials, including biomass and wastes, consistently with Circular Economy principles, and “tailor-made” for specific applications. The potential BC role as additive in the control of the many well-known critical issues of AD processes has been increasingly explored over the past few years. However, a clear and comprehensive understanding of the connections between BC and AD is still missing. This review paper analyses and discusses significant references (review articles, research papers and international databases and reports), mostly published in the last 10 years. This review is aimed at addressing three key issues related to the better understanding of the BC role in AD processes: 1. Investigation of the influence of BC properties on AD performances and of their ability to counteract its main challenges; 2. Assessment of the optimal BC production chain (i.e. feedstock-pyrolysis-activation) to achieve the desired features; 3. Evaluation of the economic and environmental advantages connected to BC use in AD processes, compared to conventional solutions applied to address AD challenges.
- Published
- 2020
8. Technical, economic and environmental assessement of bioethanol biorefinery from waste biomass
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Maddalena Laghezza, Silvia Fiore, F. Demichelis, and Marco Chiappero
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Material flow analysis (MFA) ,Municipal solid waste ,Biorefinery ,Economic analysis ,Energy balance ,Life cycle analysis (LCA) ,020209 energy ,Strategy and Management ,Biomass ,02 engineering and technology ,Industrial and Manufacturing Engineering ,0202 electrical engineering, electronic engineering, information engineering ,Environmental impact assessment ,0505 law ,General Environmental Science ,Renewable Energy, Sustainability and the Environment ,Material flow analysis ,05 social sciences ,Pulp and paper industry ,Manure ,Biofuel ,050501 criminology ,Environmental science - Abstract
This study presents a sequential three-steps methodology for the technical, economic and environmental assessment (TEEA) of bioethanol production from waste biomass. In EU the most abundant waste biomasses produced in 2018 could be ascribed to three main categories: lignocellulosic (329.41 Mt), starch (160 Mt) and sugar-based (58.56 Mt). The technical assessment compiled an inventory of the waste biomasses and subsequently designed their biological conversion into ethanol through integrated biorefinery processes by means of material flow analysis (MFA); the economic assessment was aimed at the definition of the cut-off size of the biorefinery plant necessary to achieve profitability; the environmental assessment was based on Life Cycle Analysis (LCA) and energy balance (i.e. energy input consumption). For each of the three waste biomass categories, at least one that was significant as available amount and representative in terms of physico-chemical characteristics, was evaluated: sugarcane for sugar-based, potatoes for starch-based and rice straw, cattle manure and organic fraction of municipal solid waste (OFMSW) for lignocellulosic biomasses. The technical assessment of the biorefinery routes lead to the following yields (kg of bioethanol per kg of biomass): 0.16, 0.17, 0.22, 0.19 and 0.14 respectively. The economic profitability was reached by all biorefineries and Net Present Value (M€) were: 0.85 for sugarcane, 0.11 for potatoes, 0.09 for rice straw, 0.11 for cattle manure and 0.39 for OFMSW. From the environmental perspective, cattle manure reached the highest reduction of climate change and acidification impacts compared to other biomasses, while sugarcane achieved the lowest energy input consumption (around 64%).
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- 2020
9. Biorefineries in Germany
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Mette Lübeck, Daniel Pleissner, Silvia Fiore, Maria Alexandri, F. Demichelis, Bhaskar, Thallada, Rene, Eldon R., Pandey, Ashok, Tsang, Daniel C.W., Rene, Eldon, and Tsang, Daniel
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Flexibility (engineering) ,Process (engineering) ,Scale (chemistry) ,Green biomass ,Biomass ,Oil and fat ,Starch ,Biowaste ,Biorefinery ,Biotechnological process ,Product (business) ,Chemistry ,Production (economics) ,Environmental science ,Biochemical engineering - Abstract
In integrated biorefineries, physical and mechanical, thermochemical, chemical as well as biotechnological processes are applied in order to simultaneously obtain various products belonging to the classes: Food, feed, materials, chemicals, and energy, from various biogenic feedstocks. The focus on the production of more than one product is also expected to increase flexibility to changing market prices. This chapter introduces to bioeconomy and biorefineries based on various substrates, such as biowaste, oil/fat and sugar/starch as well as green biomass, currently under operation in Germany. For each substrate, process and scale as well as products are illuminated. Furthermore, future challenges of currently operated processes are discussed.
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- 2020
10. Bladder cancer: Patient-derived organoids as a tool for precision medicine
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M. Minoli, M. Kiener, T. Federizzi, P. Gasperini, F. Demichelis, G.N. Thalmann, R. Seiler-Blarer, and M. Kruithof-De Julio
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Urology - Published
- 2021
11. The effect of nitrogen on the microstructure and the luminescence properties of a-C:H thin films
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F. Demichelis, Yichun Liu, and Alberto Tagliaferro
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Photoluminescence ,Annealing (metallurgy) ,Infrared ,Analytical chemistry ,Infrared spectroscopy ,chemistry.chemical_element ,General Chemistry ,Condensed Matter Physics ,Microstructure ,Nitrogen ,chemistry ,Materials Chemistry ,Dehydrogenation ,Luminescence - Abstract
In this paper, a comparative study of a-C:H films and low N content a-C:H:N films is performed by infrared, photoluminescence, and ultraviolet, visible, near-infrared spectra. Comparing the properties of as deposited samples with those after annealing cycles at increasing temperature, it is found that nitrogen weakens some CH bonds, as confirmed by differential scanning calorimetric results. From the analysis of the IR peaks line-width, it is shown that the presence of nitrogen leads to a stress release. Moreover, we found experimental evidence for the weakening of CH bonds due to the presence of nitrogen. In particular, a large scale rearrangement of the sp3 carbon network (probably a conversion from sp3 to sp2) consequent to the dehydrogenation of the sp3 carbon sites, takes place. The effect of the stress in the sp3 network upon sp2 regions is evidenced by the change in the photoluminescence properties and in the line-width of infrared peaks.
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- 1996
12. Characterization of the effect of growth conditions ona‐SiC:H films
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G. Crovini, F. Demichelis, Fabrizio Giorgis, P. Rava, and Candido Pirri
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Materials science ,business.industry ,Band gap ,General Physics and Astronomy ,chemistry.chemical_element ,Plasma ,Methane ,chemistry.chemical_compound ,Dwell time ,chemistry ,Electrical resistivity and conductivity ,Optoelectronics ,Molecule ,Deposition (phase transition) ,business ,Carbon - Abstract
The effects of dissipated power and gas dwell time in SiH4+CH4 plasmas on the properties of a‐SiC:H films deposited by plasma‐enhanced chemical‐vapor deposition have been investigated for different methane fractions in plasmas operating in the low‐power regime. Optical, structural, and electrical characterizations have been performed in order to investigate the influence of dissipated power and molecule dwell time on the physical properties of a‐SiC:H films. It was found that both the investigated deposition parameters can have a remarkable influence on carbon incorporation and on optical properties such as the energy gap. In particular an increase in the dissipated power or in the molecule dwell time leads to an increase in carbon incorporation and in energy gap. The electrical properties and defect density are still those of device quality films grown in standard deposition conditions and are not influenced by variations in dissipated power or gas dwell time. From these results some conclusions regardin...
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- 1996
13. Thermal stability of a-Si1−xCx: H films grown by PECVD with different gas sources
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Candido Pirri, Elena Maria Tresso, F. Demichelis, and Fabrizio Giorgis
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Photoluminescence ,Materials science ,Infrared ,Annealing (metallurgy) ,Analytical chemistry ,Plasma ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Plasma-enhanced chemical vapor deposition ,Condensed Matter::Superconductivity ,Metastability ,Thermal stability ,Electrical and Electronic Engineering ,Stoichiometry - Abstract
The application of a-Si1−xCx: H films, deposited by plasma techniques, in electronic devices operating at high current density and high temperature is limited by the metastability of the alloy. So it is of great interest to study the thermal stability of such films grown by plasma enhanced chemical vapor deposition (PECVD). Films of a-Si1−xCx: H have been deposited by ultra-high vacuum PECVD in SiH4 + CH4 and SiH4 + C2H2 gas mixtures. Optical, infrared, electron spin resonance and photoluminescence measurements have been performed on as deposited films and after annealing in the range 250–500°C. All the films, deposited by both CH4 and C2H2 sources, have a strong optical, structural and defect density stability up to annealing temperature of 400°C. At higher temperatures only near stoichiometric samples are stable for what concerns optical and spin density properties. The correlation between experimental results and physical processes occurring during annealing is discussed.
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- 1996
14. Compositional, optoelectronic and structural properties of amorphous silicon-nitrogen alloys deposited by plasma enhanced chemical vapor deposition
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R. Galloni, G. Crovini, Fabrizio Giorgis, Elena Maria Tresso, P. Rava, F. Demichelis, Candido Pirri, Caterina Summonte, Valentino Rigato, and Rita Rizzoli
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Amorphous silicon ,Range (particle radiation) ,Materials science ,business.industry ,Band gap ,Analytical chemistry ,chemistry.chemical_element ,Condensed Matter Physics ,Silane ,Nitrogen ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry.chemical_compound ,chemistry ,Plasma-enhanced chemical vapor deposition ,Materials Chemistry ,Ceramics and Composites ,Optoelectronics ,business ,Plasma processing - Abstract
High quality amorphous silicon nitrogen films with energy gap in the range of 1.9–3.2 eV have been deposited by plasma enhanced chemical vapor deposition in silane and ammonia gas mixtures. Compositional, structural, electrical and optical properties have been investigated revealing good semiconducting features comparable to those of amorphous silicon-carbon films. Advantages such as high deposition rate have been observed making a-SiN x :H y a promising material for optoelectronic technology.
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- 1996
15. Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixtures
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Candido Pirri, M. Fathallah, Elena Maria Tresso, F. Demichelis, G. Crovini, Rached Gharbi, P. Rava, and Fabrizio Giorgis
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Amorphous silicon ,Hydrogen ,Band gap ,technology, industry, and agriculture ,Analytical chemistry ,chemistry.chemical_element ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Dilution ,chemistry.chemical_compound ,chemistry ,Plasma-enhanced chemical vapor deposition ,Materials Chemistry ,Ceramics and Composites ,Saturation (chemistry) - Abstract
Amorphous silicon carbon alloys having an energy gap in the range 2.0–2.5 eV were deposited by plasma enhanced chemical vapor deposition (PECVD) from undiluted and hydrogen diluted SiH 4 + CH 4 mixtures. The optoelectronic and compositional properties of the samples were measured. Light soaking till saturation was performed on the samples and the effect on defect densities and photoconduction was investigated for both the diluted and undiluted sets of samples. The dilution in hydrogen of the gas mixtures produces samples with higher carbon incorporation, lower defect density and a lower degradation of the optoelectronic properties under light soaking.
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- 1996
16. Mechanical and physical properties of amorphous carbon-based alloys
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C. De Martino, Alberto Tagliaferro, F. Demichelis, and G. Fusco
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Materials science ,Mechanical Engineering ,Alloy ,chemistry.chemical_element ,General Chemistry ,engineering.material ,Nanoindentation ,Silane ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,Amorphous carbon ,Plasma-enhanced chemical vapor deposition ,Materials Chemistry ,engineering ,Deposition (phase transition) ,Electrical and Electronic Engineering ,Thin film ,Carbon - Abstract
Silane and nitrogen were added in the gas phase in a technique suitable for the deposition of a-C and a-C:H films, even in the absence of an external bias. It has been shown that nitrogen dehydrogenates the films and weakens CH bonds, while a small amount of silane is sufficient to achieve high values (up to 40 GPa) of hardness, as measured by nanoindentation of thick films. This result has to do with the kinetics of deposition and not the alloying itself. Preliminary results concerning a new alloy (a-C:H:Si:N) are discussed too.
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- 1996
17. Hydrogenated amorphous silicon‐nitrogen alloys,a‐SiNx:Hy: a wide band gap material for optoelectronic devices
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F. Demichelis, Candido Pirri, Elena Maria Tresso, G. Crovini, and Fabrizio Giorgis
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Amorphous silicon ,Materials science ,Band gap ,business.industry ,Photoconductivity ,Doping ,General Physics and Astronomy ,Amorphous solid ,chemistry.chemical_compound ,Semiconductor ,chemistry ,Plasma-enhanced chemical vapor deposition ,Optoelectronics ,Thin film ,business - Abstract
Amorphous silicon‐nitrogen, a‐SiNx:Hy, thin films with optical gap in the range 2.0–5.2 eV have been deposited by 13.56 MHz ultra‐high‐vacuum plasma enhanced chemical vapor deposition system in SiH4+NH3 gas mixtures. Compositional, optical, dark and photoelectrical and defect characterizations have been performed in order to show that a‐SiNx:Hy films can be applied in optoelectronic technology as wide band‐gap semiconductor. A comparison between electronic properties of a‐SiNx:Hy samples and device quality a‐Si1−xCx:H films, already applied in electronic devices, has been carried out. Amorphous silicon‐nitrogen films show high deposition rates, good controllability of optical gap, and electronic properties similar to high‐quality silicon‐carbon films. No doping effect of nitrogen atoms in tetrahedral configuration has been evidenced and spin density below 7×1017 cm−3 have been measured in a‐SiNx:Hy films with optical gap as high as 5.2 eV.
- Published
- 1996
18. Effects of hydrogen dilution of silane/methane gas mixtures on growth and structure of a-Si1−xCx:H alloys
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F. Demichelis, Fabrizio Giorgis, and Candido Pirri
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Hydrogen ,Ultra-high vacuum ,Analytical chemistry ,chemistry.chemical_element ,Infrared spectroscopy ,General Chemistry ,Condensed Matter Physics ,Silane ,Amorphous solid ,Elastic recoil detection ,chemistry.chemical_compound ,chemistry ,Plasma-enhanced chemical vapor deposition ,Materials Chemistry ,Carbon - Abstract
In this paper we have studied amorphous hydrogenated silicon-carbon, a-Si 1−x C x :H, films grown by ultra high vacuum plasma enhanced chemical vapor deposition in undiluted and hydrogen diluted SiH 4 +CH 4 gas mixtures, having energy gap in the range 2.1–3.2 eV. The films have been characterized in optical properties by transmittance-reflectance spectroscopy. The elemental composition has been determined by Rutherford back-scattering and elastic recoil detection analysis. The bonding structure and the trends of bond concentration as a function of carbon content of the films have been studied by infrared spectroscopy. We have experimentally verified for the first time that the hydrogen dilution of the reactive gas mixtures acts on the microstructure of the a-Si 1−x C x :H films by increasing the SiC bond concentration, by decreasing the carbon clusters and the CH n bonds, but unaffecting the hydrogenation of the silicon network.
- Published
- 1995
19. Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources
- Author
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Elena Maria Tresso, Candido Pirri, Fabrizio Giorgis, and F. Demichelis
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Amorphous silicon ,Physics and Astronomy (miscellaneous) ,Hydrogen ,Chemistry ,Metals and Alloys ,Analytical chemistry ,chemistry.chemical_element ,Chemical vapor deposition ,Condensed Matter Physics ,Silane ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry.chemical_compound ,Carbon film ,Amorphous carbon ,General Materials Science ,Carbon - Abstract
Hydrogenated amorphous silicon-carbon films were deposited by ultra-highvacuum plasma-enhanced chemical vapour deposition in silane + methane and silane + acetylene gas mixtures. Both types of film were compared with respect to their compositional, optical and structural properties. They have an optical gap in the range 2·3–3·3 eV for [C]/[C + Si] between 0·2 and 0·7 and possess high uniformity. The deposition rate of C2H2-based films is 4–5 A s−1, one order of magnitude higher than Ch4-based films having large bandgap. By infrared (IR) spectroscopy, marked differences in carbon and hydrogen incorporation have been found for the films grown using the two different carbon sources. Analysis of the IR spectra reveals, among the most important structural characteristics, that the films grown from the SiH4 + Ch4 plasma have a higher concentration of Si-C bonds than those grown from SiH4 + C2H2, and that C2H2-based alloys allow the formation of carbon clusters during the growth of the films. Considerat...
- Published
- 1995
20. Determination of the ratio in a-C:H films by infrared spectrometry analysis
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C. De Martino, F. Demichelis, and Alberto Tagliaferro
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Infrared ,Mechanical Engineering ,Analytical chemistry ,Infrared spectroscopy ,chemistry.chemical_element ,Mineralogy ,Diamond ,General Chemistry ,engineering.material ,Nmr data ,Electronic, Optical and Magnetic Materials ,Chemical bond ,chemistry ,Materials Chemistry ,engineering ,Graphite ,Electrical and Electronic Engineering ,Thin film ,Carbon - Abstract
In this paper, a method for the determination of the sp 3 sp 2 ratio for carbon atoms in a-C:H films is presented. First, the infrared analysis of the films is performed and the sp 3 sp 2 ratio for the hydrogenated carbon atoms is determined. From this value, and making different assumptions for the different types of a-C:H (graphite-, diamond- or polymer-like), the overall sp 3 sp 2 ratio is determined. The results obtained are in good agreement with NMR data for the types of a-C:H considered.
- Published
- 1995
21. Hydrogenated Amorphous Silicon Based Alloy: a-Si1-xCx:H
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F. Demichelis and Candido Pirri
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Amorphous silicon ,Materials science ,business.industry ,Alloy ,Nanocrystalline silicon ,Wide-bandgap semiconductor ,Optical property ,engineering.material ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Amorphous solid ,Monocrystalline silicon ,chemistry.chemical_compound ,Amorphous carbon ,chemistry ,engineering ,Optoelectronics ,General Materials Science ,business - Published
- 1995
22. Comparison of bulk and surface structure in hydrogenated amorphous carbon films
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A. Rizzi, Maddalena Patrini, J.M. Layet, Alberto Tagliaferro, M. Fontaine, C. De Martino, and F. Demichelis
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Hydrogen ,Mechanical Engineering ,Analytical chemistry ,Diamond ,chemistry.chemical_element ,High resolution electron energy loss spectroscopy ,Infrared spectroscopy ,General Chemistry ,Dielectric ,engineering.material ,Electronic, Optical and Magnetic Materials ,chemistry ,Amorphous carbon ,Ellipsometry ,Materials Chemistry ,engineering ,Graphite ,Electrical and Electronic Engineering - Abstract
Hydrogenated amorphous carbon (a-C:H) films having different characteristics (diamond like, graphite like and polymer like) are analysed. By comparing the results obtained with a surface-sensitive technique (high resolution electron energy loss spectroscopy) and a bulk-sensitive technique (IR spectrometry) knowledge of the hydrogen and sp3-sp2 depth distributions is achieved. For instance, it is shown that diamond-like films have a hydrogen enrichment near the surface, while the sp3 to sp2 ratio for protonated sites does not change with depth. By means of spectral ellipsometry, the real and imaginary parts of the dielectric constant are measured. Their shapes for the three types of a-C:H are discussed on the basis of the sp2 cluster model. For instance, it is shown that, in the bulk of graphite-like a-C:H, sp2 sites are grouped in a limited range of almost undistorted cluster sizes.
- Published
- 1995
23. Bonding structure and defects in wide band gap a-Si1−xCx:H films deposited in Hz diluted SiH4+ CH4gas mixtures
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Elena Maria Tresso, Candido Pirri, Fabrizio Giorgis, and F. Demichelis
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Hydrogen ,Absorption spectroscopy ,General Chemical Engineering ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Infrared spectroscopy ,Amorphous solid ,Elastic recoil detection ,symbols.namesake ,chemistry ,symbols ,Deposition (phase transition) ,Thin film ,Raman spectroscopy - Abstract
Amorphous silicon-carbon thin films have been deposited by a newly designed ultra-high vacuum plasma enhanced chemical vapour deposition system starting from SiH4 + CH4 gas mixtures at different Y(CH4) = CH4/(SiH4 + CH4) ratios with deposition conditions optimized to grow high-quality material, having energy gaps in the range 1·9–3·5 eV. The effect of the addition of hydrogen to the plasma with Z(H2)=H2/(SiH4 + CH4 + H2) ranging from 0 to 0·95 has been investigated. A detailed analysis of elemental composition, obtained by Rutherford backscattering and elastic recoil detection analysis, and of structural properties, obtained by infrared and Raman spectroscopies, has been carried out. The results have been correlated to the plasma conditions, the disorder and the optoelectronic properties of the a-Si1−x C x :H films.
- Published
- 1995
24. Structural and optoelectronic properties of carbon-rich hydrogenated amorphous silicon-carbon films
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Candido Pirri, V. Rigato, S. Zandolin, G. Della Mea, Elena Maria Tresso, Fabrizio Giorgis, and F. Demichelis
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Amorphous silicon ,Materials science ,Absorption spectroscopy ,Band gap ,business.industry ,Mechanical Engineering ,Analytical chemistry ,Infrared spectroscopy ,chemistry.chemical_element ,General Chemistry ,Electronic, Optical and Magnetic Materials ,Elastic recoil detection ,chemistry.chemical_compound ,Carbon film ,chemistry ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Spectroscopy ,Carbon - Abstract
In this paper we present a study on a-SiC:H films with energy gap in the range 2.2–3.5 eV grown by plasma-enhanced CVD from CH 4 + SiH 4 mixtures, with and without H 2 dilution. The compositional, structural and optoelectronic properties of the films were characterized using Rutherford backscattering and elastic recoil detection analysis, IR absorption spectroscopy, transmittance-reflectance and electron spin resonance measurements. As H 2 is added to the plasma, an evolution of IR properties and changes in the atomic composition and in the density of the films were observed. The structure of the films evolves towards a more compact network, with increased incorporation of carbon atoms and promotion of CH 2 bonding. This is accompanied by an increase in spin densities up to 10 19 cm −3 .
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- 1995
25. Density of gap states in a-SiC:H films by means of photoconductive and photothermal spectroscopies
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Ubaldo Coscia, Fabrizio Giorgis, F. Demichelis, Elena Maria Tresso, Candido Pirri, Giampiero Amato, F., Demicheli, F., Giorgi, C. F., Pirri, E., Tresso, G., Amato, and Coscia, Ubaldo
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Materials science ,Silicon ,business.industry ,Photoconductivity ,Fermi level ,Dangling bond ,chemistry.chemical_element ,Photon energy ,Condensed Matter Physics ,Molecular physics ,Spectral line ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,symbols.namesake ,Optics ,chemistry ,Atomic electron transition ,symbols ,Density of states ,Electrical and Electronic Engineering ,business ,Computer Science::Information Theory - Abstract
In the present work we report and discuss results on the gap density of states for a-SiC:H films, deposited by PECVD with different CHL flow rates, through the deconvolution of CPM and PDS spectra. The occupied density of states in the gap is in first approximation the derivative of the CPM spectrum with respect to the photon energy. Below the Urbach edge the PDS and CPM techniques are sensitive to different electronic transitions. From the difference between PDS and CPM spectra the deep unoccupied density of defects above the Fermi level can be deduced. This procedure has been applied for the first time to the a-SiC:H binary alloy. We have obtained that the defect distribution ascribed to silicon dangling bonds can be fitted by gaussian curves with increasing correlation energy and halfwidths as the carbon content increases.
- Published
- 1995
26. Photoluminescence ina-C:H films
- Author
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Steffen Schreiter, Alberto Tagliaferro, and F. Demichelis
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Physics ,Photoluminescence ,Distribution (mathematics) ,Single cluster ,Phase (matter) ,Electronic structure ,Atomic physics ,Excitation ,Amorphous solid - Abstract
Amorphous hydrogenated carbon films show a characteristic photoluminescence behavior that is of great interest for the study of their electronic structure. In the present paper we develop a model of the photoluminescence process in a polymerlike hydrocarbon on the basis of a mixed ${\mathit{sp}}^{2\mathrm{\ensuremath{-}}}$${\mathit{sp}}^{3}$ hybridization of the carbon atoms in this material. The ${\mathit{sp}}^{2}$ phase is assumed to be confined in clusters embedded within a ${\mathit{sp}}^{3}$ matrix. We assume excitation and recombination to take place within a single cluster. Thus the overall photoluminescence signal consists of the contribution of all single clusters, having different energy-gap values ${\mathit{E}}_{\mathit{g}}$, due to their various sizes and/or shapes. Applying the model to experimental data, we deduce a material-characteristic function f(${\mathit{E}}_{\mathit{g}}$) that turns out to be representative of the distribution of the different energy-gap values ${\mathit{E}}_{\mathit{g}}$ of the ${\mathit{sp}}^{2}$ clusters in the film. The good agreement with experimental data suggests that the classical Tauc gap ${\mathit{E}}_{\mathrm{Tauc}}$ in a-C:H films is a value averaging over all single-cluster gap values ${\mathit{E}}_{\mathit{g}}$. Moreover, our model reproduces all the peculiar features of the photoluminescence behavior of a-C:H films, such as the nonactivated dependence upon temperature.
- Published
- 1995
27. Structural and optoelectronic properties of doped microcrystalline silicon carbide films
- Author
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Elena Maria Tresso, Candido Pirri, F. Demichelis, M Fanclulli, G. Crovini, T. Stapinski, and T Piesarkiewicz
- Subjects
Materials science ,Band gap ,business.industry ,Doping ,Chemical vapor deposition ,Conductivity ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Carbide ,law.invention ,Plasma-enhanced chemical vapor deposition ,law ,Seebeck coefficient ,Solar cell ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business - Abstract
Undoped and phosphorus-doped microcrystalline silicon carbide ( mu c-SiC:H) films were deposited by plasma-enhanced chemical vapour deposition (PECVD) with high hydrogen dilution and high RF power density. The doped films obtained have a bandgap up to 2.0 eV and electrical dark conductivity up to 17 S cm-1. The thermoelectric power (TEP) measurements and the behaviour of the conductivity and Hall mobility as functions of temperature provided information on electrical transport phenomena. Structural and optical measurements confirmed properties of this material for application in LED and solar cell technology.
- Published
- 1994
28. Characteristics of a-C:H:Si films deposited by r.f. sputtering under various deposition conditions
- Author
-
C. De Martino, Alberto Tagliaferro, and F. Demichelis
- Subjects
Materials science ,Silicon ,Mechanical Engineering ,Metallurgy ,Analytical chemistry ,chemistry.chemical_element ,General Chemistry ,Substrate (electronics) ,Sputter deposition ,Silane ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Sputtering ,Materials Chemistry ,Deposition (phase transition) ,Graphite ,Electrical and Electronic Engineering ,Diode - Abstract
In this paper we report the results of an extensive investigation of a-C:H:Si alloys deposited by an r.f. diode sputtering system, operated with a graphite target and an Ar SiH4 atmosphere. This allowed us to study the influence of the inclusion of silicon in a-C:H. It is shown that, according to the deposition conditions, various sets of properties can be realized. In particular, small amounts of silicon added at a low substrate temperature give diamond-like characteristics, while silicon added at a high substrate temperature causes polymer-like behaviour. An increase in silane in the gas phase enables the deposition of C:H:Si with tetrahedral structure. The sets of deposition conditions giving different types of material were identified.
- Published
- 1994
29. Temperature dependence analysis of the electron paramagnetic resonance signal and electrical conductivity in a-C and a-C:H
- Author
-
Alberto Tagliaferro, Marco Fanciulli, C. De Martino, and F. Demichelis
- Subjects
Chemistry ,Pulsed EPR ,Mechanical Engineering ,Relaxation (NMR) ,Analytical chemistry ,General Chemistry ,Atmospheric temperature range ,Conductivity ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,law.invention ,Amorphous carbon ,Electrical resistivity and conductivity ,law ,Materials Chemistry ,Electrical and Electronic Engineering ,Electron paramagnetic resonance - Abstract
In this paper, a study of the electron paramagnetic resonance (EPR) signal and of the electrical conductivity for sputtered amorphous carbon (a-C) and graphite-like amorphous hydrogenated carbon (a-C:H) films is reported. In particular, the comparison of the temperature dependence of conductivity and of the EPR resonance signal line width shows that different mechanisms are responsible for conduction in the two materials. Conduction is by overlapping states in a-C down to 60 K and by hopping in a-C:H up to 400 K. Further differences are observed in the spin-lattice relaxation times in the whole temperature range from 10 to 500 K where the values in a-C:H were found longer by an order of magnitude as compared with those in a-C.
- Published
- 1994
30. The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films
- Author
-
Candido Pirri, F. Zignani, Caterina Summonte, Rita Rizzoli, Elena Maria Tresso, R. Galloni, G. Crovini, A. Madan, F. Demichelis, and P. Rava
- Subjects
Amorphous silicon ,Materials science ,Photothermal spectroscopy ,business.industry ,General Chemical Engineering ,Photoconductivity ,Analytical chemistry ,General Physics and Astronomy ,Infrared spectroscopy ,Chemical vapor deposition ,Carbide ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Solar cell ,Optoelectronics ,Fourier transform infrared spectroscopy ,business - Abstract
Amorphous silicon carbide films were deposited by the plasma-enhanced chemical vapour deposition technique in SiH4-CH4-H2 gas mixtures and the effect of hydrogen dilution on the optoelectronic properties investigated using photo-thermal deflection spectroscopy, photoconductivity and dark electrical conductivity, photoluminescence and Fourier transform infrared spectroscopy. Large H2 dilution leads to materials of improved quality whose E g is about 2.0eV. The materials were also incorporated into a solar cell device structure to confirm our conclusions.
- Published
- 1994
31. Electronic density of states in a-SiC:H films
- Author
-
F. Demichelis, G. Crovini, Elena Maria Tresso, P. Rava, Candido Pirri, Fabrizio Giorgis, Giampiero Amato, H. Herremans, and W. Grevendonk
- Subjects
Chemistry ,ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION ,Analytical chemistry ,chemistry.chemical_element ,Electronic density of states ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Optical absorption spectra ,Quality (physics) ,Materials Chemistry ,Ceramics and Composites ,Density of states ,Deconvolution ,Carbon - Abstract
In the present work we investigate the effects of carbon on the distribution of gap density of states (DOS) in device quality a-SiC:H films. Information on the DOS have been obtained through the deconvolution of optical absorption spectra, as obtained by CPM and PDS, and through ESR and OMS techniques.
- Published
- 1993
32. The role of π and π gaussian-like density-of-states bands in the interpretation of the physical properties of a-C and a-C:H films
- Author
-
D. Dasgupta, Alberto Tagliaferro, C. De Martino, and F. Demichelis
- Subjects
symbols.namesake ,Distribution (number theory) ,Chemistry ,Gaussian ,Materials Chemistry ,Ceramics and Composites ,Density of states ,symbols ,Physical chemistry ,Condensed Matter Physics ,Molecular physics ,Electronic, Optical and Magnetic Materials ,Interpretation (model theory) - Abstract
Many relevant properties of a-C and a-C:H films are due to the distribution of π and π ∗ states. We assume π and π ∗ bands to be gaussian shaped, as a consequence of the different size of the graphic-like islands and of their different abundances. We show that this assumption allows most of the peculiar properties of a-C and a-C:H films to be understood.
- Published
- 1993
33. Relations among structural and optoelectronic properties in a-SiC:H films with high C content and high photoconductivity
- Author
-
Elena Maria Tresso, G. Galluzzi, Candido Pirri, R. Vincenzoni, F. Demichelis, G. Crovini, G. Guattari, and Giuseppe Leo
- Subjects
Silicon ,Chemistry ,business.industry ,Band gap ,Photoconductivity ,chemistry.chemical_element ,Infrared spectroscopy ,Substrate (electronics) ,Condensed Matter Physics ,Decomposition ,Electronic, Optical and Magnetic Materials ,Dilution ,Chemical bond ,Materials Chemistry ,Ceramics and Composites ,Optoelectronics ,business - Abstract
a-SiC:H films with high carbon to silicon ratio (from 0.3 to 0.7) have been grown by RF plasma decomposition of CH4 and SiH4 mixtures with and without hydrogen dilution and at different substrate temperatures. Their structural and optoelectronic properties are compared and discussed. The obtained results clearly indicate that H2 dilution and high substrate temperature lead to highly photoconductive films, with preminent tetrahedral bonds and low defect density.
- Published
- 1993
34. Infrared vibrational spectra of hydrogenated amorphous and microcrystalline silicon-carbon alloys
- Author
-
Elena Maria Tresso, F. Demichelis, G. Crovini, and Candido Pirri
- Subjects
Materials science ,Hydrogen ,General Chemical Engineering ,technology, industry, and agriculture ,General Physics and Astronomy ,chemistry.chemical_element ,Chemical vapor deposition ,Amorphous solid ,Crystallinity ,Microcrystalline ,chemistry ,Amorphous carbon ,Network covalent bonding ,Physical chemistry ,Carbon - Abstract
We have performed a detailed study of composition and vibrational excitations of amorphous and microcrystalline silicon-carbon alloys grown with high hydrogen dilution by plasma-enhanced chemical vapour deposition. The strengths of characteristic vibration bands show variations at the amorphous-crystalline transition and with the degree of crystallinity, providing a very useful framework for understanding the structure of the alloys. The composition of the amorphous tissue constituting the matrix of the films has been deduced. The matrix can be considered a covalent network where 1 in 9 bonds are terminated by hydrogen and the carbon can be present in the tetrahedral, polymeric or graphitic form.
- Published
- 1993
35. Investigation on electronic density of states in a-SixC1-x: H films
- Author
-
Candido Pirri, Giampiero Amato, F. Demichelis, H. Herremans, W. Grevendonk, U. Coscia, Elena Maria Tresso, G.J. Adriaenssens, F., Demicheli, C. F., Pirri, E., Tresso, H., Herreman, W., Grevendonk, G. J., Adriaenssen, G., Amato, and Coscia, Ubaldo
- Subjects
Photocurrent ,Photothermal spectroscopy ,Absorption spectroscopy ,Chemistry ,Analytical chemistry ,Physics::Optics ,General Physics and Astronomy ,Surfaces and Interfaces ,General Chemistry ,Plasma ,Activation energy ,Condensed Matter Physics ,Molecular physics ,Surfaces, Coatings and Films ,law.invention ,law ,Thin film ,Spectroscopy ,Electron paramagnetic resonance - Abstract
Films of a-SixC1-x: H with different carbon contents were deposited by an ultrahigh vacuum plasma enhanced chemical vapour desposition system and characterized by means of the following experimental techniques: photothermal deflection spectroscopy, constant photocurrent method, optical modulation spectroscopy and electron spin resonance. The results include data on optical gap, Urbach tail energy, thermal activation energy of dark conductivity, density and distribution of defects and quantum efficiency-mobility-lifetime product. Comparison of the data obtained with the different techniques is presented and discussed.
- Published
- 1993
36. Degree of crystallinity and electrical transport properties of microcrystalline silicon-carbon alloys
- Author
-
Candido Pirri, F. Demichelis, and Elena Maria Tresso
- Subjects
Silicon ,Chemistry ,General Chemical Engineering ,General Physics and Astronomy ,chemistry.chemical_element ,Mineralogy ,Chemical vapor deposition ,Conductivity ,symbols.namesake ,chemistry.chemical_compound ,Crystallinity ,Microcrystalline ,Chemical engineering ,symbols ,Silicon carbide ,Grain boundary ,Raman spectroscopy - Abstract
The structural and electrical properties of undoped microcrystalline silicon-carbon films deposited by plasma-enhanced chemical vapour deposition are analysed. Raman spectroscopy and high-resolution transmission electron micro-scopy suggest that the films are constituted of silicon microcrystals, surrounded by a grain-boundary region, or interconnected or separated by a hydrogenated amorph-ous silicon carbide channel. The dependences of the electrical transport properties upon the structure of the films are examined and interpreted in terms of different conductivity mechanisms. The dark conductivities as a function of temperature in the range 300–420 K show a dependence on the degree of crystallinity of the films. The proposed models seem to fit the experimental results well.
- Published
- 1993
37. Refining method for the design of multilayer stacks
- Author
-
W. Perotto, F. Demichelis, Giancarlo Ferrari, and E. Minetti-Mezzetti
- Subjects
Materials science ,business.industry ,Materials Science (miscellaneous) ,Industrial and Manufacturing Engineering ,Spectral sensitivity ,Optics ,Band-pass filter ,Stack (abstract data type) ,Transmittance ,Business and International Management ,Thin film ,Optical filter ,business ,Refractive index ,Computer Science::Information Theory ,Refining (metallurgy) - Abstract
An analytical procedure is presented for the calculation of the maximum of transmittance in a limited spectral region and of the efficiency of a given multilayer configuration when the thickness is altered of certain films in the stack. This refining process method is employed in examples where the spectral transmittance is improved when only a few matching layers are used for refining.
- Published
- 2010
38. Design method for multilayer interference filters
- Author
-
E. Minetti-Mezzetti, F. Demichelis, and G. Castagno
- Subjects
Materials science ,business.industry ,Materials Science (miscellaneous) ,Computer Science::Neural and Evolutionary Computation ,Physics::Optics ,Reflectivity ,Industrial and Manufacturing Engineering ,Condensed Matter::Materials Science ,Wavelength ,Optics ,Narrowband ,Interference (communication) ,Band-pass filter ,Transmittance ,Optoelectronics ,Business and International Management ,Thin film ,business ,Refractive index ,Computer Science::Information Theory - Abstract
In this paper expressions for the transmittance and the reflectance of a system consisting of a spacer surrounded by two multilayer stacks are presented. These expressions provide a general approach for the design of multilayer coatings. High- and low-transmittance bands and a narrowband in the transmittance spectrum of multilayer stacks with unequal designed wavelengths are reported.
- Published
- 2010
39. The MicroArray Quality Control (MAQC)-IIII study of common practices for the development and validation of microarray-based predictive models
- Author
-
L. SHI, G. CAMPBELL, W. JONES, F. CAMPAGNE, Z. WEN, S. WALKER, Z. SU, T. CHU, F. GOODSAID, L. PUSZTAI, J. SHAUGHNESSY, A. OBERTHUER, R. THOMAS, R. PAULES, M. FIELDEN, B. BARLOGIE, W. CHEN, P. DU, M. FISCHER, C. FURLANELLO, B. GALLAS, X. GE, D. MEGHERBI, W. SYMMANS, M. WANG, J. ZHANG, H. BITTER, B. BRORS, P. BUSHEL, M. BYLESJO, M. CHEN, J. CHENG, J. CHOU, T. DAVISON, M. DELORENZI, Y. DENG, V. DEVANARAYAN, D. DIX, J. DOPAZO, K. DORFF, F. ELLOUMI, J. FAN, S. FAN, X. FAN, H. FANG, N. GONZALUDO, K. HESS, H. HONG, J. HUAN, R. IRIZARRY, R. JUDSON, D. JURAEVA, S. LABABIDI, C. LAMBERT, L. LI, Y. LI, Z. LI, S. LIN, G. LIU, E. LOBENHOFER, J. LUO, W. LUO, M. MCCALL, Y. NIKOLSKY, G. PENNELLO, R. PERKINS, R. PHILIP, V. POPOVICI, N. PRICE, F. QIAN, A. SCHERER, T. SHI, W. SHI, J. SUNG, D. THIERRY-MIEG, J. THIERRY-MIEG, V. THODIMA, J. TRYGG, L. VISHNUVAJJALA, S. WANG, J. WU, Y. WU, Q. XIE, W. YOUSEF, L. ZHANG, X. ZHANG, S. ZHONG, Y. ZHOU, S. ZHU, D. ARASAPPAN, W. BAO, A. LUCAS, F. BERTHOLD, R. BRENNAN, A. BUNESS, J. CATALANO, C. CHANG, R. CHEN, Y. CHENG, J. CUI, W. CZIKA, F. DEMICHELIS, X. DENG, D. DOSYMBEKOV, R. EILS, Y. FENG, J. FOSTEL, S. FULMER-SMENTEK, J. FUSCOE, L. GATTO, W. GE, D. GOLDSTEIN, L. GUO, D. HALBERT, J. HAN, S. HARRIS, C. HATZIS, D. HERMAN, J. HUANG, R. JENSEN, R. JIANG, C. JOHNSON, G. JURMAN, Y. KAHLERT, S. KHUDER, M. KOHL, J. LI, M. LI, Q. LI, S. LI, J. LIU, Y. LIU, Z. LIU, L. MENG, M. MADERA, F. MARTINEZ-MURILLO, I. MEDINA, J. MEEHAN, K. MICLAUS, R. MOFFITT, D. MONTANER, P. MUKHERJEE, G. MULLIGAN, P. NEVILLE, T. NIKOLSKAYA, B. NING, G. PAGE, J. PARKER, R. PARRY, X. PENG, R. PETERSON, J. PHAN, B. QUANZ, Y. REN, S. RICCADONNA, A. ROTER, F. SAMUELSON, M. SCHUMACHER, J. SHAMBAUGH, Q. SHI, R. SHIPPY, S. SI, A. SMALTER, C. SOTIRIOU, M. SOUKUP, F. STAEDTLER, G. STEINER, T. STOKES, Q. SUN, P. TAN, R. TANG, Z. TEZAK, B. THORN, M. TSYGANOVA, Y. TURPAZ, S. VEGA, R. VISINTAINER, J. VON FRESE, C. WANG, E. WANG, J. WANG, W. WANG, F. WESTERMANN, J. WILLEY, M. WOODS, S. WU, N. XIAO, J. XU, L. XU, L. YANG, X. ZENG, M. ZHANG, C. ZHAO, R. PURI, U. SCHERF, W. TONG, R. WOLFINGER, and MAQC Consortium
- Abstract
Gene expression data from microarrays are being applied to predict preclinical and clinical endpoints, but the reliability of these predictions has not been established. In the MAQC-II project, 36 independent teams analyzed six microarray data sets to generate predictive models for classifying a sample with respect to one of 13 endpoints indicative of lung or liver toxicity in rodents, or of breast cancer, multiple myeloma or neuroblastoma in humans. In total, >30,000 models were built using many combinations of analytical methods. The teams generated predictive models without knowing the biological meaning of some of the endpoints and, to mimic clinical reality, tested the models on data that had not been used for training. We found that model performance depended largely on the endpoint and team proficiency and that different approaches generated models of similar performance. The conclusions and recommendations from MAQC-II should be useful for regulatory agencies, study committees and independent investigators that evaluate methods for global gene expression analysis.
- Published
- 2010
40. Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide
- Author
-
F. Demichelis, Elena Maria Tresso, and Candido Pirri
- Subjects
Microcrystalline ,Materials science ,Dopant ,business.industry ,Band gap ,Doping ,General Physics and Astronomy ,Optoelectronics ,Thin film ,business ,Microstructure ,Amorphous solid ,Carbide - Abstract
Amorphous and microcrystalline silicon carbide, undoped and doped, has attracted a great attention for its optical and electrical properties. The introduction of dopant atoms in the network of amorphous films permits the control of electrical properties but it gives rise to a decreasing of the optical gap. Microcrystalline SiC:H films seem to provide films having a wide range of electrical conductivities without drastic change in the optical gap. This paper presents the results of a detailed study on the effects of boron and phosphorus doping on structural, optical, and electrical properties of a‐SiC:H and μc‐SiC:H films. An optical gap as high as 2.1 eV, together with a conductivity of 10−3 Ω−1 cm−1, are shown by doped μc‐SiC:H.
- Published
- 1992
41. Microcrystallization formation in silicon carbide thin films
- Author
-
Elena Maria Tresso, Candido Pirri, and F. Demichelis
- Subjects
Materials science ,Hydrogen ,Annealing (metallurgy) ,General Chemical Engineering ,General Physics and Astronomy ,chemistry.chemical_element ,Mineralogy ,Chemical vapor deposition ,Amorphous solid ,chemistry.chemical_compound ,Microcrystalline ,chemistry ,Chemical engineering ,Plasma-enhanced chemical vapor deposition ,Silicon carbide ,Thin film - Abstract
In the present work, two different methods of promoting microcrystal formation in the amorphous network of hydrogenated silicon carbide (Sic: H) have been investigated: glow-discharge plasma-enhanced chemical vapour deposition (PECVD) with high hydrogen dilution and high power density, and annealing of device-quality amorphous SiC: H films. The microcrystalline SiC: H films directly produced by PECVD have a high electrical conductivity (10−5ω-1cm−1), a large energy gap (2–2.1eV) and they are hydrogenated. The annealed films have a high electrical conductivity (7× 10−4ω−1cm−1) and a smaller optical bandgap and they do not contain hydrogen.
- Published
- 1992
42. Evaluation of the [C(sp3)]/[C(sp2)] ratio in diamondlike films through the use of a complex dielectric constant
- Author
-
Candido Pirri, F. Demichelis, and Alberto Tagliaferro
- Subjects
Physics ,Order (ring theory) ,Optical transmittance ,Trigonal crystal system ,Dielectric ,Atomic physics ,Reflectivity ,Energy (signal processing) - Abstract
The evaluation of the amount of tetrahedral and trigonal cross-linking, that is, the ${\mathit{sp}}^{3}$- and ${\mathit{sp}}^{2}$-hybridized carbon, is of great importance in understanding the properties of amorphous carbon films. In this paper we report a method for deducing the [${\mathit{sp}}^{3}$]/[${\mathit{sp}}^{2}$] ratio from the experimental values of the complex dielectric constant as obtained by optical transmittance and reflectance measurements. We assume a Gaussian-like distribution of \ensuremath{\pi} and ${\mathrm{\ensuremath{\pi}}}^{\mathrm{*}}$ electronic densities of states in order to fit the contribution of \ensuremath{\pi}\ensuremath{\rightarrow}${\mathrm{\ensuremath{\pi}}}^{\mathrm{*}}$ to the imaginary part, ${\mathrm{\ensuremath{\epsilon}}}_{2}$, of the dielectric constant in the low-energy region. Through the Kramers-Kronig relationships we deduce the corresponding values of the real part ${\mathrm{\ensuremath{\epsilon}}}_{1}$ of the dielectric constant for such transitions. By subtracting these values from the measured ${\mathrm{\ensuremath{\epsilon}}}_{1}$ we deduce the contribution of \ensuremath{\sigma}\ensuremath{\rightarrow}${\mathrm{\ensuremath{\sigma}}}^{\mathrm{*}}$ to ${\mathrm{\ensuremath{\epsilon}}}_{1}$. The Wemple-Didomenico model has been used to obtain the dispersion energy and the average excitation energy. Knowing the plasmon energies, we apply the ``f-sum rule'' to deduce the [${\mathit{sp}}^{3}$]/[${\mathit{sp}}^{2}$] ratio. The method applied to a-C:H films deposited by rf diode sputtering provides results in agreement with those obtained by other techniques.
- Published
- 1992
43. Differences in physical properties of hydrogenated and fluorinated amorphous silicon carbide prepared by reactive sputtering
- Author
-
Elena Maria Tresso, T. Stapinski, F. Demichelis, and Candido Pirri
- Subjects
Amorphous silicon ,Materials science ,Silicon ,Hydrogen ,General Physics and Astronomy ,Infrared spectroscopy ,Mineralogy ,chemistry.chemical_element ,Microstructure ,Carbide ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,Sputtering ,Fluorine - Abstract
The paper deals with structural, optical, and electrical properties of a‐SiC:H and a‐SiC:H,F films prepared by rf sputtering of a silicon target in Ar+H2+CH4 and Ar+H2+CF4 gas mixtures, respectively. The comparison of the physical properties of the two different sets of the samples has been considered and the influence of hydrogen and/or fluorine incorporation is examined and discussed.
- Published
- 1992
44. Structural evolution in α-SiC:H induced by thermal annealing as deduced by optical properties
- Author
-
Giorgio Kaniadakis and F. Demichelis
- Subjects
Materials science ,business.industry ,Plasma energy ,Sputter deposition ,Condensed Matter Physics ,Structural evolution ,Molecular physics ,Reflectivity ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Optics ,Absorption edge ,Physics::Plasma Physics ,Transmittance ,Electrical and Electronic Engineering ,Valence electron ,business ,Refractive index - Abstract
The temperature evolution of the characteristic optical parameters, absorption edge, refractive index, plasma energy, valence electron number of films deposited by glow-discharge and by RF magnetron sputtering deduced from transmittance and reflectance measurements have been compared. The parameters strongly depend on the preparation conditions and appear to be sensitive functions of the network disorder.
- Published
- 1992
45. Influence of silicon on the physical properties of diamond-like films
- Author
-
Candido Pirri, F. Demichelis, and Alberto Tagliaferro
- Subjects
inorganic chemicals ,Materials science ,Silicon ,Mechanical Engineering ,Material properties of diamond ,technology, industry, and agriculture ,Nanocrystalline silicon ,chemistry.chemical_element ,Chemical vapor deposition ,equipment and supplies ,Condensed Matter Physics ,Silane ,Amorphous solid ,chemistry.chemical_compound ,Chemical engineering ,Amorphous carbon ,chemistry ,Mechanics of Materials ,Organic chemistry ,General Materials Science ,Carbon - Abstract
The effect of the inclusion of silicon atoms in the network of diamond-like carbon (amorphous carbon and hydrogenated amorphous carbon) is studied. Samples of amorphous hydrogenated CSi are deposited by means of a sputter-assisted plasma chemical vapour deposition system in which a carbon target is sputtered in an atmosphere composed of silane-diluted argon, where the silane flow rate is varied. It is shown that initially the effect of silicon inclusion is to reduce the size of the graphitic-like islands. When the amount of silicon is increased over a critical value, the network assumes the characteristic of the semiconductor-type amorphous hydrogenated SiC, where the properties of silicon are predominant.
- Published
- 1992
46. Physical properties of undoped and doped hydrogenated amorphous silicon carbide
- Author
-
Candido Pirri, Elena Maria Tresso, G. Della Mea, V. Rigato, P. Rava, and F. Demichelis
- Subjects
Amorphous silicon ,Dopant ,Chemistry ,Band gap ,Doping ,Analytical chemistry ,Mineralogy ,chemistry.chemical_element ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Carbide ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Impurity ,Condensed Matter::Superconductivity ,Physics::Atomic and Molecular Clusters ,Materials Chemistry ,Condensed Matter::Strongly Correlated Electrons ,Electrical and Electronic Engineering ,Absorption (electromagnetic radiation) ,Boron - Abstract
A systematic study on the basic characteristics of p-type a-SiC:H films doped with B2H6 and n-type doped with PH3 is presented. The effect of doping on the optical and electrical properties of the films has been examined. The results obtained on energy gap, spin density, Urbach energy and integral of excess absorption suggest that the phosphorus dopant atoms introduce fewer additional defects than does boron. The difference in the behaviour of the two types of doping has been attributed to the chemistry of boron and phosphorus.
- Published
- 1991
47. Diamond-like properties of amorphous carbon and hydrogenated amorphous carbon thin films
- Author
-
F. Demichelis, Das Gupta, and Alberto Tagliaferro
- Subjects
Materials science ,Hydrogen ,Analytical chemistry ,chemistry.chemical_element ,Diamond ,Surfaces and Interfaces ,General Chemistry ,Sputter deposition ,engineering.material ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Amorphous solid ,Carbon film ,Amorphous carbon ,chemistry ,Materials Chemistry ,engineering ,Graphite ,Composite material ,Carbon - Abstract
Films of amorphous carbon (a-C) and hydrogenated amorphous carbon (a-C:H) have been prepared by r.f. magnetron sputtering of a graphite target in atmospheres without and with hydrogen respectively. These films have been studied by optical, electrical and electron spin resonance measurements. The conductivity and the optical absorption coefficient values were found to be similar for the two materials. The only relevant difference was detected in the volume density of spins. It was found to be around 10 21 cm -3 for a-C and below 10 20 cm -3 for a-C:H samples. It is shown that diamond-like a-C, having similar properties to a-C:H, can be obtained by means of this technique. As a consequence, hydrogen plays only an indirect role in determining the relevant optical and electrical parameters. However, the hydrogenated material is less defective.
- Published
- 1991
48. The origin of optical absorption and the electron spin resonance signal in amorphous carbon and amorphous hydrogenated carbon: a proposed density-of-states model
- Author
-
F. Demichelis, Alberto Tagliaferro, Candido Pirri, and D. Dasgupta
- Subjects
Amorphous silicon ,Materials science ,Condensed matter physics ,Fermi level ,chemistry.chemical_element ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter Physics ,Surfaces, Coatings and Films ,law.invention ,Amorphous solid ,Condensed Matter::Materials Science ,symbols.namesake ,chemistry.chemical_compound ,Nuclear magnetic resonance ,Amorphous carbon ,chemistry ,law ,Materials Chemistry ,Density of states ,symbols ,Electron paramagnetic resonance ,Absorption (electromagnetic radiation) ,Carbon - Abstract
The optical absorption spectral behaviour and the amount of electron spin resonance (ESR) signal in amorphous carbon and hydrogenated amorphous carbon are discussed. It is shown that the value of the Tauc optical gap obtained by applying the standard procedure has a different meaning from that in hydrogenated amorphous silicon and related materials. From its value, information on the shape of the gaussian-like π and π ∗ peaks of the density of states (DOS) due to the sixfold rings forming the graphite-like islands can be obtained. An empirical relationship between the Tauc gap and gaussian parameters is given. It is shown that the measured ESR signal cannot arise from the tail of the gaussian bands near the Fermi level. A different contribution exists, most probably arising from the same “defects” sitting near the graphite-like islands borders which are responsible for conductivity near room temperature. A model DOS taking into account the two contributions is presented.
- Published
- 1991
49. Influence of substrate temperature and annealing treatments on the properties of glow-discharge and sputtered a-SixC1−x:H films
- Author
-
Elena Maria Tresso, F. Demichelis, G. Benedetto, and Candido Pirri
- Subjects
Amorphous silicon ,Glow discharge ,Hydrogen ,Annealing (metallurgy) ,Chemistry ,General Chemical Engineering ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Chemical vapor deposition ,Carbide ,chemistry.chemical_compound ,Chemical engineering ,Sputtering ,Thin film - Abstract
In order to improve our understanding of the role of hydrogen and its influence on the electronic properties of amorphous silicon carbide alloys, we have investigated the optical, electrical and structural properties of films deposited by glow discharge and by sputtering on substrates held at different temperature and after annealing at temperatures in the range 100–400°C.
- Published
- 1991
50. Electrical conductivity of amorphous carbon and amorphous hydrogenated carbon
- Author
-
F. Demichelis, D. Dasgupta, and Alberto Tagliaferro
- Subjects
General Chemical Engineering ,Analytical chemistry ,General Physics and Astronomy ,Mineralogy ,chemistry.chemical_element ,Percolation threshold ,Conductivity ,Sputter deposition ,Amorphous solid ,Amorphous carbon ,chemistry ,Electrical resistivity and conductivity ,Graphite ,Carbon - Abstract
Amorphous carbon (a-C) thin films have been prepared by r.f. magnetron sputtering of graphite targets in an Ar atmosphere and their d.c. electrical dark conductivity has been measured as a function of temperature. The results are compared with those obtained by earlier workers for a-C and hydrogenated a-C. A detailed analysis leads us to the conclusion that conductivity of amorphous C with or without H is determined mostly by the amount and distribution of sp2 sites in the material. Near room temperature the experimental results suggest hopping between neighbouring sp2 (graphitic) islands embedded in an sp3 (diamond-like) matrix if the sp2:sp3 ratio is below its percolation threshold value and hopping in the band tails if this ratio is above such a threshold. In the temperature region above 500 K hopping in the band tails is shown to be the only effective mechanism.
- Published
- 1991
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