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Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide
- Source :
- Journal of Applied Physics. 72:1327-1333
- Publication Year :
- 1992
- Publisher :
- AIP Publishing, 1992.
-
Abstract
- Amorphous and microcrystalline silicon carbide, undoped and doped, has attracted a great attention for its optical and electrical properties. The introduction of dopant atoms in the network of amorphous films permits the control of electrical properties but it gives rise to a decreasing of the optical gap. Microcrystalline SiC:H films seem to provide films having a wide range of electrical conductivities without drastic change in the optical gap. This paper presents the results of a detailed study on the effects of boron and phosphorus doping on structural, optical, and electrical properties of a‐SiC:H and μc‐SiC:H films. An optical gap as high as 2.1 eV, together with a conductivity of 10−3 Ω−1 cm−1, are shown by doped μc‐SiC:H.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 72
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....ae7f6d8a8e18b5b086a65c1365c7eba2