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1. El dispositivo de la basura como fenómeno global. Un enfoque desde el arte contemporáneo.

2. High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development

3. Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures

5. High-quality NbN nanofilms on a GaN/AlN heterostructure

7. The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures

10. Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography

11. Polarization Doping in a GaN-InN System—Ab Initio Simulation

12. Design and fabrication process flow for high-efficiency and flexible InGaN solar cells

13. Optical net gain measurement on Al

14. Comparison of the Material Quality of Al

15. Polarization doping— Ab initio verification of the concept: Charge conservation and nonlocality

16. Combining Atomic-Scale EDX with Inelastic Multislice Simulations for Quantitative Chemical Analysis of AlGaN/GaN 1 nm-thick Quantum Wells

19. Electron beam pumped light emitting devices

20. Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

21. The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

22. Study of the optical properties of AlGaN/GaN separate confinement heterostructures for low-threshold e-beam pumped UV lasers

23. Development of NbN-based superconducting single photon detectors on silicon platform

24. Study of AlxGa1-xN/AlN quantum dots in the whole compositional range as potential sources of far UVC for disinfection

25. Assessment of Active Dopants and p–n Junction Abruptness Using In Situ Biased 4D-STEM

26. Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission

27. Performance enhancement of an ultrafast all-fiber laser based on an InN saturable absorber using GRIN coupling

31. Corrigendum to 'Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures' [J. Alloy. Compd. 823 (2020) 153791]

32. Non-polar GaN/AlGaN quantum-well polariton laser at room temperature

33. Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

34. Building an integrated quantum photonics platform on silicon for ultra-secure communications

35. NbN-on-Si superconducting nanowire single photon detectors: effect of a sputtered AlN buffer layer

36. Study of AlxGa1-xN/AlN (0 ≤ x ≤ 0.1) quantum dots for the fabrication of E-beam pumped UV emitters

37. Development of AlGaN/GaN heterostructures for e-beam pumped UV lasers

38. Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer

39. Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale

40. AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers

41. Optical net gain measurement on Al0.07Ga0.93N/GaN multi-quantum well

43. Sub-250 fs passively mode-locked ultralong ring fibre oscillators

44. Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

45. High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development

46. UV Emission from GaN Wires with m -Plane Core–Shell GaN/AlGaN Multiple Quantum Wells

47. UV Emission from GaN Wires with

48. Wurtzite quantum well structures under high pressure

49. Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

50. Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

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