44 results on '"El Kazzi, S."'
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2. Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling.
3. Comprehensive study of Cp2Mg p-type doping of InP with MOVPE growth technique
4. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions
5. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices.
6. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices
7. Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment
8. Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
9. 2D materials: roadmap to CMOS integration
10. MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates
11. Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP.
12. Investigation of the anisotropic strain relaxation in GaSb islands on GaP.
13. High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
14. Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
15. (Invited) III-V Selective Area Growth and Epitaxial Functional Oxides on Si: From Electronic to Photonic Devices
16. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior
17. Delayed onset of band-to-band tunneling in tunneling field effects transistors due to field induced quantum confinement: experimental verification
18. High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer
19. Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures
20. TEM and molecular dynamics simulation investigation of the anisotropic strain relaxation in GaSb islands on GaP
21. Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces
22. Relaxation de contrainte par réseau de dislocations aux interfaces GaSb/GaP et GaSb/GaAs
23. Comprehensive study of Cp 2 Mg p-type doping of InP with MOVPE growth technique
24. Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes
25. Etude morphologique de la croissance par épitaxie par jets moléculaires de GaSb sur substrat GaP
26. Strain relaxation by misfit dislocation array at the GaSb/GaP interface
27. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors
28. The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism
29. Atomistic Modeling and HAADF Investigations of Misfit and Threading Dislocations in GaSb/GaAs Heterostructures for Applications in High Electron Mobility Transistors.
30. Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
31. Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy
32. Mechanism of formation of the misfit dislocations at the cubic materials interfaces
33. AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
34. Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
35. GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
36. MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates.
37. Assessment of wafer scale MoS 2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors.
38. Longitudinal genomic surveillance of multidrug-resistant Escherichia coli carriage in critical care patients.
39. Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts.
40. Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides.
41. Peculiar alignment and strain of 2D WSe 2 grown by van der Waals epitaxy on reconstructed sapphire surfaces.
42. Material-Selective Doping of 2D TMDC through Al x O y Encapsulation.
43. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.
44. Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.
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