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2. Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling.

5. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices.

6. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices

9. 2D materials: roadmap to CMOS integration

11. Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP.

12. Investigation of the anisotropic strain relaxation in GaSb islands on GaP.

15. (Invited) III-V Selective Area Growth and Epitaxial Functional Oxides on Si: From Electronic to Photonic Devices

16. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior

17. Delayed onset of band-to-band tunneling in tunneling field effects transistors due to field induced quantum confinement: experimental verification

18. High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer

19. Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

20. TEM and molecular dynamics simulation investigation of the anisotropic strain relaxation in GaSb islands on GaP

21. Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces

22. Relaxation de contrainte par réseau de dislocations aux interfaces GaSb/GaP et GaSb/GaAs

25. Etude morphologique de la croissance par épitaxie par jets moléculaires de GaSb sur substrat GaP

26. Strain relaxation by misfit dislocation array at the GaSb/GaP interface

29. Atomistic Modeling and HAADF Investigations of Misfit and Threading Dislocations in GaSb/GaAs Heterostructures for Applications in High Electron Mobility Transistors.

36. MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates.

37. Assessment of wafer scale MoS 2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors.

38. Longitudinal genomic surveillance of multidrug-resistant Escherichia coli carriage in critical care patients.

39. Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts.

40. Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides.

41. Peculiar alignment and strain of 2D WSe 2 grown by van der Waals epitaxy on reconstructed sapphire surfaces.

42. Material-Selective Doping of 2D TMDC through Al x O y Encapsulation.

43. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

44. Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.

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