Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces

Authors :: Desplanque, L.
El Kazzi, S.
Coinon, C.
Wang, Y.
Ruterana, P.
Wallart, X.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany
Publication Year :: 2011
Publisher :: HAL CCSD, 2011.

Language :: English
Database :: OpenAIRE
Journal :: 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany
Accession number :: edsair.dedup.wf.001..bf3aa77058be3da8cae020b4b83068e5

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