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Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here, we report the discovery of the first material system having both spin and orbital-sourced BC: LaAlO$_3$/SrTiO$_3$ interfaces grown along the [111] direction. We detect independently these two sources and directly probe the BC associated to the spin quantum number through measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material., 32 pages, 25 figures, accepted in Nature Materials

Suspended piezoelectric thin films are key elements enabling high-frequency filtering in telecommunication devices. To meet the requirements of next-generation electronics, it is essential to reduce device thickness for reaching higher resonance frequencies. Here, the high-quality mechanical and electrical properties of graphene electrodes are combined with the strong piezoelectric performance of the free-standing complex oxide, BaTiO

The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30–100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.

Ultrafast optical control of magnetic anisotropy in a van der Waals antiferromagnet activates a sub-THz two-dimensional magnon., Van der Waals magnets provide an ideal playground to explore the fundamentals of low-dimensional magnetism and open opportunities for ultrathin spin-processing devices. The Mermin-Wagner theorem dictates that as in reduced dimensions isotropic spin interactions cannot retain long-range correlations, the long-range spin order is stabilized by magnetic anisotropy. Here, using ultrashort pulses of light, we control magnetic anisotropy in the two-dimensional van der Waals antiferromagnet NiPS3. Tuning the photon energy in resonance with an orbital transition between crystal field split levels of the nickel ions, we demonstrate the selective activation of a subterahertz magnon mode with markedly two-dimensional behavior. The pump polarization control of the magnon amplitude confirms that the activation is governed by the photoinduced magnetic anisotropy axis emerging in response to photoexcitation of ground state electrons to states with a lower orbital symmetry. Our results establish pumping of orbital resonances as a promising route for manipulating magnetic order in low-dimensional (anti)ferromagnets.

The electric-field effect control of two-dimensional electron gases (2-DEGs) has allowed nanoscale electron quantum transport to be explored in semiconductors. Structures based on transition metal oxides have electronic states that favour the emergence of novel quantum orders that are absent in conventional semiconductors and the 2-DEG formed at a LaAlO3/SrTiO3 interface—a structure in which superconductivity and spin–orbit coupling can coexist—is a promising platform to develop devices for spintronics and topological electronics. However, field-effect control of the properties of this interface at the nanoscale remains challenging. Here we show that a quantum point contact can be formed in a LaAlO3/SrTiO3 interface through electrostatic confinement of the 2-DEG using a split gate. Our device exhibits a quantized conductance due to ballistic transport in a controllable number of one-dimensional conducting channels. Under a magnetic field, the direct observation of the Zeeman splitting between spin-polarized bands allows the determination of the Lande g-factor, whose value differs strongly from that of the free electrons. Through source–drain voltage measurements, we also performed a spectroscopic investigation of the 3d energy levels inside the quantum point contact. The LaAlO3/SrTiO3 quantum point contact could potentially be used as a spectrometer to probe Majorana states in an oxide 2-DEG. A quantum point contact formed in the two-dimensional electron gas of a LaAlO3/SrTiO3 interface exhibits quantized conductance due to ballistic transport in a controllable number of one-dimensional conducting channels.

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb

Noncollinear antiferromagnets with a $D{0}_{19}$ ($\mathrm{space}\phantom{\rule{0.28em}{0ex}}\mathrm{group}=194$, $P{6}_{3}/mmc$) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, ${\mathrm{Mn}}_{3}\mathrm{Sn}$, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of ${\mathrm{Mn}}_{3}\mathrm{Sn}$ films with both (0001) $c$-axis orientation and ($40\overline{4}3$) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude ${\ensuremath{\sigma}}_{xy}({\ensuremath{\mu}}_{0}H=0\phantom{\rule{0.28em}{0ex}}\mathrm{T})=21\phantom{\rule{0.28em}{0ex}}{\mathrm{\ensuremath{\Omega}}}^{\ensuremath{-}1}\phantom{\rule{0.28em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}1}$ and coercive field ${\ensuremath{\mu}}_{0}{H}_{c}=1.3\phantom{\rule{0.28em}{0ex}}\mathrm{T}$. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of ${\mathrm{Mn}}_{3}\mathrm{Sn}$. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field emerges. This indicates the onset of a topological Hall effect contribution, arising from a nonzero scalar spin chirality that generates a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral nature of the noncoplanar magnetic structure driving it, can be controlled using different field-cooling conditions.

The combination of strain and electrostatic engineering in epitaxial heterostructures of ferroelectric oxides offers many possibilities for inducing new phases, complex polar topologies, and enhanced electrical properties. However, the dominant effect of substrate clamping can also limit the electromechanical response and often leaves electrostatics to play a secondary role. Releasing the mechanical constraint imposed by the substrate can not only dramatically alter the balance between elastic and electrostatic forces, enabling them to compete on par with each other, but also activate new mechanical degrees of freedom, such as the macroscopic curvature of the heterostructure. In this work, an electrostatically driven transition from a predominantly out-of-plane polarized to an in-plane polarized state is observed when a PbTiO3 /SrTiO3 superlattice with a SrRuO3 bottom electrode is released from its substrate. In turn, this polarization rotation modifies the lattice parameter mismatch between the superlattice and the thin SrRuO3 layer, causing the heterostructure to curl up into microtubes. Through a combination of synchrotron-based scanning X-ray diffraction imaging, Raman scattering, piezoresponse force microscopy and scanning transmission electron microscopy, the crystalline structure and domain patterns of the curved superlattices are investigated, revealing a strong anisotropy in the domain structure and a complex mechanism for strain accommodation. This article is protected by copyright. All rights reserved.

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 {\mu}m to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb3Cl8 is an insulator, however the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed., Comment: 17 pages, 3 figures

Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet $\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ir}$. Using epitaxial engineering on MgO (001) and $\mathrm{A}{\mathrm{l}}_{2}{\mathrm{O}}_{3}$ (0001) single-crystal substrates, we control the growth of cubic \ensuremath{\gamma}-$\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ir}$ in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as \ensuremath{-}29 mT (equivalent to a unidirectional anisotropy constant of $0.115\phantom{\rule{0.16em}{0ex}}\mathrm{erg}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$ or $11.5\phantom{\rule{0.16em}{0ex}}\mathrm{nJ}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$) measured in $\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ir}$ (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in $\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ir}$ (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.

Noncollinear antiferromagnets, with either an L12 cubic crystal lattice (e.g., Mn3Ir and Mn3Pt) or a D019 hexagonal structure (e.g., Mn3Sn and Mn3Ge), exhibit a number of phenomena of interest to topological spintronics. Among the cubic systems, for example, tetragonally distorted Mn3Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn3Pt only enters a noncollinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn3Ir, the material of choice for use in exchange bias heterostructures. In this letter, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic γ-Mn3Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (1.500 ± 0.002) × 1023 cm-3. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small net magnetic moment, observed at low temperatures, shown by X-ray magnetic circular dichroism spectroscopy to arise from uncompensated Mn spins. Being of the order of 0.02 μB/atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains

In this article, we show that the two-dimensional electron gas formed at the ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ interface behaves as a Josephson junction array. In particular, it exhibits a stochastic switching of the superconducting critical current, which qualitatively follows the dynamics of the resistively and capacitively shunted Josephson junction model. The switching current distribution (SCD) has been measured as a function of temperature and back-gate voltage. At low temperatures a clear saturation of the standard deviation of the SCD is observed, possibly indicating the presence of a macroscopic quantum tunneling regime with phase diffusion. Through the gate voltage we modify the damping of the array and compare it to artificial arrays of junctions.

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LAO thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. Although electrostatic mechanisms have been proposed in the past to describe the existence of this critical thickness, the importance of chemical defects has been recently accentuated. Here, we describe the growth of metal/LAO/STO heterostructures in an ultra-high vacuum (UHV) cluster system combining pulsed laser deposition (to grow the LAO), magnetron sputtering (to grow the metal) and X-ray photoelectron spectroscopy (XPS). We study step by step the formation and evolution of the q2DES and the chemical interactions that occur between the metal and the LAO/STO. Additionally, magnetotransport experiments elucidate on the transport and electronic properties of the q2DES. This systematic work not only demonstrates a way to study the electrostatic and chemical interplay between the q2DES and its environment, but also unlocks the possibility to couple multifunctional capping layers with the rich physics observed in two-dimensional electron systems, allowing the fabrication of new types of devices.

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 and SrTiO3 has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO3 thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO3/SrTiO3 samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO3 and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects., Work supported by ERC Consolidator grant MINT (Contract No. 615759)

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES., Comment: Final version just published in Nature Materials. Contact author for a reprint

International audience; We present a method to fabricate top-gated field-effect devices in a LaAlO3/SrTiO3 two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.

Future spintronics devices will be built from elemental blocks allowing the electrical injection, propagation, manipulation and detection of spin-based information. Owing to their remarkable multi-functional and strongly correlated character, oxide materials already provide such building blocks for charge-based devices such as ferroelectric field-effect transistors (FETs), as well as for spin-based two-terminal devices such as magnetic tunnel junctions, with giant responses in both cases. Until now, the lack of suitable channel materials and the uncertainty of spin-injection conditions in these compounds had however prevented the exploration of similar giant responses in oxide-based lateral spin transport structures. In this paper, we discuss the potential of oxide-based spin FETs and report magnetotransport data that suggest electrical spin injection into the LaAlO 3 –SrTiO 3 interface system. In a local, three-terminal measurement scheme, we analyse the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or longitudinal magnetic fields (Hanle and ‘inverted’ Hanle effects). The spin accumulation signal appears to be much larger than expected, probably owing to amplification effects by resonant tunnelling through localized states in the LaAlO 3 . We give perspectives on how to achieve direct spin injection with increased detection efficiency, as well on the implementation of efficient top gating schemes for spin manipulation.

In LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, the bending of the SrTiO3 conduction band at the interface forms a quantum well that contains a superconducting two-dimensional electron gas (2-DEG). Its carrier density and electronic properties, such as superconductivity and Rashba spin-orbit coupling can be controlled by electrostatic gating. In this article we show that the Fermi energy lies intrinsically near the top of the quantum well. Beyond a filling threshold, electrons added by electrostatic gating escape from the well, hence limiting the possibility to reach a highly-doped regime. This leads to an irreversible doping regime where all the electronic properties of the 2-DEG, such as its resistivity and its superconducting transition temperature, saturate. The escape mechanism can be described by the simple analytical model we propose.

International audience; Perovskite materials engineered in epitaxial heterostructures have been intensely investigated during the last decade. The interface formed by an LaAlO 3 thin film grown on top of a TiO 2-terminated SrTiO 3 substrate hosts a two-dimensional electronic system and has become the prototypical example of this field. Although controversy exists regarding some of its physical properties and their precise origin, it is universally found that conductivity only appears beyond an LaAlO 3 thickness threshold of four unit cells. Here, we experimentally demonstrate that this critical thickness can be reduced to just one unit cell when a metallic film of cobalt is deposited on top of LaAlO 3. First-principles calculations indicate that Co modifies the electrostatic boundary conditions and induces a charge transfer towards the Ti 3d bands, supporting the electrostatic origin of the electronic system at the LaAlO 3 /SrTiO 3 interface. Our results expand the interest of this low-dimensional oxide system from in-plane to perpendicular transport and to the exploration of elastic and inelastic tunnel-type transport of (spin-polarized) carriers.

We report results of electrical spin injection at the high-mobility quasi-two-dimensional electron system (2-DES) that forms at the ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ interface. In a nonlocal, three-terminal measurement geometry, we analyze the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or transverse magnetic fields (Hanle and inverted Hanle effect). The influence of bias and back-gate voltages reveals that the spin accumulation signal is amplified by resonant tunneling through localized states in the ${\mathrm{LaAlO}}_{3}$ strongly coupled to the 2-DES by tunneling transfer.