Top-gated field-effect LaAlO 3 /SrTiO 3 devices made by ion-irradiation

International audience; We present a method to fabricate top-gated field-effect devices in a LaAlO3/SrTiO3 two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.