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1. TO THE QUESTION OF LEGAL RESTRICTION OF FREEDOM IN VIRTUAL REALITY

2. Antagonistic Activity of Newly Isolated Lactobacillus Strains Against Morganella Morganii

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4. Assessment of plant species diversity (Lamiaceae Lindle.) in Uzbekistan based on DNA barcoding

9. Multijunction a-Si:H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires

10. Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

11. Comparative analysis of different methods of anesthesia in patients with acute pancreatitis using pain scales

13. Si doped GaP layers grown on Si wafers by low temperature PE-ALD

14. a-Si:H/c-Si Heterojunction Solar Cell Based on Top-Down Silicon Nanostructures

16. Design and investigation of GaPAsN/Si light-emitting diode

17. Study of GaP/Si Heterojunction Solar Cells

18. Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

19. Increasing the plasticity of the welded metal of welded joints in secondary aluminium alloys

20. System analysis of the weldability of aluminium alloys

21. Thin film GaP for solar cell application

22. Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

23. Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 40 substrates

24. Copper (I) oxide rf-magnetron sputtering at elevated substrate temperatures

25. Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy

27. Raman measurements of dilute nitride alloys GaP(As)N grown on GaP substrates

28. Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs

29. 15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers

30. Photoluminescence observation from zinc oxide formed by magnetron sputtering at room temperature

31. MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

32. 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures