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Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 40 substrates
- Source :
- Journal of Physics: Conference Series. 917:032044
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
- Subjects :
- History
Materials science
Silicon
business.industry
020209 energy
05 social sciences
chemistry.chemical_element
050109 social psychology
Heterojunction
Crystal growth
02 engineering and technology
Epitaxy
Semimetal
Computer Science Applications
Education
chemistry
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
0501 psychology and cognitive sciences
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 17426596 and 17426588
- Volume :
- 917
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Conference Series
- Accession number :
- edsair.doi...........1fd52df2f0c8d0751f66b2a1ac5c2f32
- Full Text :
- https://doi.org/10.1088/1742-6596/917/3/032044