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337 results on '"Dutartre, D"'

2. Kinetic Monte Carlo simulations of Ge-Sb-Te thin film crystallization

Author

Portavoce, A, Roland, G, Remondina, J, Descoins, M, Bertoglio, M, Amalraj, M, Eymeoud, P, Dutartre, D, Lorut, F, Putero, M, Portavoce A., Roland G., Remondina J., Descoins M., Bertoglio M., Amalraj M., Eymeoud P., Dutartre D., Lorut F., Putero M., Portavoce, A, Roland, G, Remondina, J, Descoins, M, Bertoglio, M, Amalraj, M, Eymeoud, P, Dutartre, D, Lorut, F, Putero, M, Portavoce A., Roland G., Remondina J., Descoins M., Bertoglio M., Amalraj M., Eymeoud P., Dutartre D., Lorut F., and Putero M.

Abstract

Simulation of atomic redistribution in Ge-Sb-Te (GST)-based memory cells during SET/RESET cycling is needed in order to understand GST memory cell failure and to design improved non-volatile memories. However, this type of atomic scale simulations is extremely challenging. In this work, we propose to use a simplified GST system in order to catch the basics of atomic redistribution in Ge-rich GST (GrGST) films using atomistic kinetic Monte Carlo simulations. Comparison between experiments and simulations shows good agreements regarding the influence of Ge excess on GrGST crystallization, as well as concerning the GST growth kinetic in GrGST films, suggesting the crystallized GST ternary compound to be off-stoichiometric. According to the simulation of atomic redistribution in GrGST films during SET/RESET cycling, the film microstructure stabilized during cycling is significantly dependent of the GST ternary phase stoichiometry. The use of amorphous layers exhibiting the GST ternary phase stoichiometry placed at the bottom or at the top of the GrGST layer is shown to be a way of controlling the microstructure evolution of the film during cycling. The significant evolution of the local composition in the amorphous solution during cycling suggests a non-negligible variation of the crystallization temperature with operation time.

Published
2022

3. New insights in GeTe growth mechanisms

Author

Roland, G, Portavoce, A, Bertoglio, M, Descoins, M, Remondina, J, Dutartre, D, Lorut, F, Putero, M, Roland G., Portavoce A., Bertoglio M., Descoins M., Remondina J., Dutartre D., Lorut F., Putero M., Roland, G, Portavoce, A, Bertoglio, M, Descoins, M, Remondina, J, Dutartre, D, Lorut, F, Putero, M, Roland G., Portavoce A., Bertoglio M., Descoins M., Remondina J., Dutartre D., Lorut F., and Putero M.

Abstract

The compound GeTe, despite its simple stoichiometry, is rather unconventional and has been investigated both from a fundamental and technological perspective: it is of high interest for several technologies such as data-storage (phase change memories) and thermoelectricity. The understanding of GeTe growth is thus a key issue for technological applications and fundamental understanding. In this work, GeTe crystallization kinetics is compared to Ge/Te reactive diffusion kinetics using in situ X-ray diffraction measurements, as well as in situ transmission electron microscopy. GeTe crystallization from an amorphous solid solution exhibiting the stoichiometry of the compound GeTe is found to occur at the same temperature as for the reactive diffusion of an amorphous Ge layer on top of a polycrystalline Te layer. Furthermore, GeTe growth is of tridimensional type in the two cases, and can be modeled by the Johnson-Mehl-Avrami-Kolmogorov model. Using this model, the activation energies of nucleation and growth were determined for both crystallization and reactive diffusion. The results suggest that GeTe exhibits nucleation/reaction kinetics unusually low compared to atomic transport kinetics, contrasting with other germanides.

Published
2022

8. BEOL Process Effects on ePCM Reliability

Author

Redaelli, A., primary, Gandolfo, A., additional, Samanni, G., additional, Gomiero, E., additional, Petroni, E., additional, Scotti, L., additional, Lippiello, A., additional, Mattavelli, P., additional, Jasse, J., additional, Codegoni, D., additional, Serafini, A., additional, Ranica, R., additional, Boccaccio, C., additional, Sandrini, J., additional, Berthelon, R., additional, Grenier, J.-C., additional, Weber, O., additional, Turgis, D., additional, Valery, A., additional, Medico, S. Del, additional, Caubet, V., additional, Reynard, J.-P., additional, Dutartre, D., additional, Favennec, L., additional, Conte, A., additional, Disegni, F., additional, De Tomasi, M., additional, Ventre, A., additional, Baldo, M., additional, Ielmini, D., additional, Maurelli, A., additional, Ferreira, P., additional, Arnaud, F., additional, Piazza, F., additional, Cappelletti, P., additional, Annunziata, R., additional, and Gonella, R., additional

Published
2022
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9. Improving Ge-rich GST ePCM reliability through BEOL engineering

Author

Redaelli, A., Gandolfo, A., Samanni, G., Gomiero, E., Petroni, E., Scotti, L., Lippiello, A., Mattavelli, P., Jasse, J., Codegoni, D., Serafini, A., Ranica, R., Boccaccio, C., Sandrini, J., Berthelon, R., Grenier, Jc., Weber, O., Turgis, D., Valery, A., Del Medico, S., Caubet, V., Reynard, Jp., Dutartre, D., Favennec, L., Conte, A., Disegni, F., De Tomasi, M., Ventre, A., Baldo, M., Ielmini, D., Maurelli, A., Ferreira, P., Arnaud, F., Piazza, F., Cappelletti, P., Annunziata, R., and Gonella, R.

Published
2021

12. Kinetic Monte Carlo simulations of Geâ€"Sbâ€"Te thin film crystallization.

Author

Portavoce, A, Roland, G, Remondina, J, Descoins, M, Bertoglio, M, Amalraj, M, Eyméoud, P, Dutartre, D, Lorut, F, and Putero, M

Subjects
MONTE Carlo method, CRYSTALLIZATION, PHASE change memory, DESIGN failures, PHASE change materials, THIN films, GERMANIUM films
Abstract

Simulation of atomic redistribution in Geâ€"Sbâ€"Te (GST)-based memory cells during SET/RESET cycling is needed in order to understand GST memory cell failure and to design improved non-volatile memories. However, this type of atomic scale simulations is extremely challenging. In this work, we propose to use a simplified GST system in order to catch the basics of atomic redistribution in Ge-rich GST (GrGST) films using atomistic kinetic Monte Carlo simulations. Comparison between experiments and simulations shows good agreements regarding the influence of Ge excess on GrGST crystallization, as well as concerning the GST growth kinetic in GrGST films, suggesting the crystallized GST ternary compound to be off-stoichiometric. According to the simulation of atomic redistribution in GrGST films during SET/RESET cycling, the film microstructure stabilized during cycling is significantly dependent of the GST ternary phase stoichiometry. The use of amorphous layers exhibiting the GST ternary phase stoichiometry placed at the bottom or at the top of the GrGST layer is shown to be a way of controlling the microstructure evolution of the film during cycling. The significant evolution of the local composition in the amorphous solution during cycling suggests a non-negligible variation of the crystallization temperature with operation time. [ABSTRACT FROM AUTHOR]

Published
2022
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27. Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

Author

Kanyandekwe, J., primary, Barge, D., additional, Morin, P., additional, Grenouillet, L., additional, Labrot, M., additional, Maitrejean, S., additional, Augendre, E., additional, Lapras, V., additional, Morand, Y., additional, Dutartre, D., additional, Gros-Jean, M., additional, Gourhant, O., additional, Gaumer, C., additional, Rambal, N., additional, Cooper, D., additional, and Clement, L., additional

Published
2018
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28. Tensile strain in arsenic heavily doped Si.

Author

Borot, G., Rubaldo, L., Clement, L., Pantel, R., Dutartre, D., Kuitunen, K., Slotte, J., Tuomisto, F., Mescot, X., Gri, M., and Ghibaudo, G.

Subjects
ARSENIC, CHEMICAL vapor deposition, POSITRON annihilation, SEMICONDUCTOR doping, PROPERTIES of matter, HETEROJUNCTIONS, SILICON research, EPITAXY
Abstract

In this paper we highlight the existence of tensile stress in heavily arsenic-doped epitaxial silicon (Si:As) prepared by low pressure chemical vapor deposition. Despite the large size of As atoms compared to Si ones, we demonstrate with x-ray diffraction and convergent electron beam diffraction that the heavily doped epitaxial layers show a tetragonal lattice with a reduced out of plane parameter. Using positron annihilation spectroscopy, we highlight the formation of arsenic-vacancies defects during the growth. We show that the tensile strain is related to this type of defects involving inactive As atoms and not to the As active concentration. [ABSTRACT FROM AUTHOR]

Published
2007
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29. Microfocus x-ray study of selective area epitaxy of SiGe on Si.

Author

Giannakopoulos, K. P., Roth, S., Burghammer, M., Fellous, C., Richard, D., and Dutartre, D.

Subjects
SILICON, EPITAXY, MICROPROBE analysis
Abstract

We describe an x-ray microprobe measurement of selectively grown heteroepitaxial Si[sub 1-x]Ge[sub x] on Si. The experiment was conducted at the European Synchrotron Radiation Facility of Grenoble at the ID13 Microfocus beamline. The Si[sub 1-x]Ge[sub x] layers were deposited by a standard chemical vapor deposition process on patterned 200 mm wafers of monocrystalline Si substrate. The uniformity of the pseudomorphic layers, in terms of Ge content and thickness, is evaluated by double crystal x-ray diffraction with the use of a novel microgoniometer and with a spatial resolution of ∼5 × 7.5 µm². The results show the good uniformity of the SiGe layers and indicate the possibility of evaluating the strain fields near the shallow trench isolation structures. [ABSTRACT FROM AUTHOR]

Published
2003
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31. Impact of strain on access resistance in planar and nanowire CMOS devices

Author

Berthelon, R., primary, Andneu, F., additional, Triozon, F., additional, Casse, M., additional, Bourdet, L., additional, Ghibaudo, G., additional, Rideau, D., additional, Niquet, Y. M., additional, Barraud, S., additional, Nguyen, P., additional, Le Royer, C., additional, Lacord, J., additional, Tabone, C., additional, Rozeau, O., additional, Dutartre, D., additional, Claverie, A., additional, Josse, E., additional, Andrieu, F., additional, and Vinet, M., additional

Published
2017
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34. A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology

Author

Berthelon, R., primary, Andrieu, F., additional, Perreau, P., additional, Cooper, D., additional, Roze, F., additional, Gourhant, O., additional, Rivallin, P., additional, Bernier, N., additional, Cros, A., additional, Ndiaye, C., additional, Baylac, E., additional, Souchier, E., additional, Dutartre, D., additional, Claverie, A., additional, Weber, O., additional, Josse, E., additional, Vinet, M., additional, and Haond, M., additional

Published
2016
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35. Maximum supercooling of silicon encapsulated in SiO2.

Author

Dutartre, D.

Subjects
*SILICON, *SUPERCOOLING, *SILICA
Abstract

Presents a study which examined quantitavely by a silicon dioxide-encapsulated silicon-on-silica structure the supercooling of silicon. Experiment; Results; Discussion; Conclusion.

Published
1986
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36. Study of the solidification front of Si films in lamp zone melting controlled by patterning the underlying SiO2.

Author

Dutartre, D., Haond, M., and Bensahel, D.

Subjects
*RECRYSTALLIZATION (Metallurgy), *THIN films, *SEMICONDUCTOR wafers
Abstract

Investigates a periodic heat-sink structure in lamp recrystallization of thin polycrystalline silicon films deposited on oxidized wafers. Investigation on the effect of the scan speed; Importance of the in-plan orientation relative to the scan direction in the occurrence of defects inside the thin silicon films on insulator stripes; Mechanisms which can decrease the silicon melting temperature.

Published
1986
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37. Nondestructive characterization of silicon-on-insulator structures using infrared spectroscopic ellipsometry.

Author

Ferrieu, F. and Dutartre, D.

Subjects
*SILICON-on-insulator technology, *INFRARED spectroscopy, *ELLIPSOMETRY
Abstract

Presents a study that performed nondestructive characterization of a large variety of silicon-on-insulator (SOI) structures by means of infrared spectroscopic ellipsometry (IRSE). Applicability of IRSE for the characterization of SOI; Additional information provided by IRSE spectra concerning the SOI structure; Advantages of the IRSE method as compared to classical optical techniques using visible light.

Published
1990
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38. Mechanics of the silica cap during zone melting of Si films.

Author

Dutartre, D.

Subjects
*RECRYSTALLIZATION (Metallurgy), *SILICON, *POLYCRYSTALS, *SILICON-on-insulator technology
Abstract

Presents information on a study which performed zone melting recrystallization of polycrystalline silicon films on oxidized wafers using linear strip heaters to obtain good quality silicon-on-insulator (SOI) films. Elimination of the effects related to variations of the in-plane crystallographic orientation; Information on partial meltings carried out using a SOI sample; Recrystallizations carried out in the lamp system.

Published
1989
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39. Electrical characterization of silicon epitaxial layers grown by limited reaction processing.

Author

Mathiot, D., Regolini, J. L., and Dutartre, D.

Subjects
EPITAXY, SILANE
Abstract

Presents information on a study which used capacitance-voltage technique to perform a comparison between various silicon epitaxial layer structures grown by the limited reaction process using silane, disilane or dichlorosilane, diluted in hydrogen. Layer growth; Measurement of the residual doping concentration of the epitaxial layers; Description of the capacitance-voltage technique; Quantitative analysis and discussion.

Published
1991
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43. Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs

Author

Berthelon, R., primary, Andrieu, F., additional, Josse, E., additional, Bingert, R., additional, Weber, O., additional, Serret, E., additional, Aurand, A., additional, Delmedico, S., additional, Farys, V., additional, Bernicot, C., additional, Bechet, E., additional, Bernard, E., additional, Poiroux, T., additional, Rideau, D., additional, Scheer, P., additional, Baylac, E., additional, Perreau, P., additional, Jaud, M.A., additional, Lacord, J., additional, Petitprez, E., additional, Pofelski, A., additional, Ortolland, S., additional, Sardin, P., additional, Dutartre, D., additional, Claverie, A., additional, Vinet, M., additional, Marin, J.C., additional, and Haond, M., additional

Published
2016
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45. Behavior and optimizations of Si/SiGe HBT on thin-film SOI

Author

Avenier, Gregory, Fregonese, Sebastien, Vandelle, Benoit, Dutartre, D., Saguin, Fabienne, Schwartzmann, Thierry, Maneux, Cristell, Zimmer, Thomas, Chantre, Alain, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), and Fregonese, Sebastien

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

46. Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon

Author

Borot, G., Rubaldo, L., Breil, N., Boussey, J., gerard ghibaudo, Dutartre, D., Domenget, Chahla, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2006

47. 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

Author

Chevalier, P., Fellous, C., Rubaldo, L., Pourchon, F., Pruvost, S., Beerkens, R., Saguin, F., Zerounian, N., Barbalat, B., Lepilliet, Sylvie, Dutartre, D., Celi, D., Telliez, I., Gloria, D., Al, And, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2005

48. Kinetic aspects of epitaxial silicon growth using disilane in a rapid thermal processing system.

Author

Pares, G., Regolini, J. L., Mercier, J., Dutartre, D., and Bensahel, D.

Subjects
SILICON, SILANE compounds, EPITAXY
Abstract

Presents a study that measured the epitaxial growth rate of silicon in the disilane/hydrogen system for different experimental conditions in a rapid thermal processing-low-pressure chemical vapor deposition reactor. Information on the measured activation energy; Growth rate dependence on disilane or hydrogen partial pressures; Proposed model for the decomposition of the disilane molecule in the torr pressure regime.

Published
1990
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50. Low cost 300mm double-SOI substrate for low insertion loss 1D & 2D grating couplers

Author

Baudot, C., primary, Dutartre, D., additional, Souhaite, A., additional, Vulliet, N., additional, Jones, A., additional, Ries, M., additional, Mekis, A., additional, Verslegers, L., additional, Sun, P., additional, Chi, Y., additional, Cremer, S., additional, Gourhant, O., additional, Benoit, D., additional, Courgoulet, G., additional, Perrot, C., additional, Broussous, L., additional, Pinguet, T., additional, Siniviant, J., additional, and Boeuf, F., additional

Published
2014
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