231 results on '"Drummond, T. J."'
Search Results
2. Ultra-High Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
3. Comparison of Mg and Zn gate implants for GaAs n-channel junction field effect transistors
4. Reciprocal Space Mapping of Epitaxial Materials Using Position-Sensitive X-Ray Detection
5. The role of surface tension in the growth of strained quantum wire arraysa).
6. A parametric investigation of AlGaAs/GaAs modulation-doped quantum wires.
7. Low field mobility of 2-d electron gas in modulation doped AlxGa1-xAs/GaAs layers.
8. Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature.
9. Normally-on and normally-off camel diode gate GaAs field effect transistors for large scale integration.
10. Current transport in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions at moderate electric fields.
11. Electron mobility in single and multiple period modulation-doped (Al,Ga)As/GaAs heterostructures.
12. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy.
13. Clustering in molecular-beam epitaxial AlxGa1-xAs-GaAs quantum-well heterostructure lasers.
14. Experimental and theoretical electron mobility of modulation doped AlxGa1-xAs/GaAs heterostructures grown by molecular beam epitaxy.
15. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1-xAs/GaAs heterostructures.
16. n-type ion implantation doping of AlxGa1-xAs (0≤x≤0.7).
17. Built-in biaxial strain dependence of Γ-X transport in GaAs/InxAl1-xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06).
18. Electron traps created by high temperature annealing in MBE n-GaAs
19. The structural dependence of light sensitivity in (Al,Ga)As/GaAs modulation doped heterostructures
20. Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC.
21. Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectors.
22. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures.
23. Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy.
24. Moderate mobility enhancement in single period AlxGa1-x As/GaAs heterojunctions with GaAs on top.
25. Hall effect and mobility in heterojunction layers.
26. Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructures.
27. Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system
28. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption
29. Selective oxidation of buried AlGaAs versus AlAs layers
30. n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7)
31. Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
32. Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
33. Built‐in biaxial strain dependence of Γ‐Xtransport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)
34. Molecular beam epitaxy grown III–V strain relaxed buffer layers and superlattices characterized by atomic force microscopy
35. Molecular beam epitaxy grown AlAsSb/GaAsSb distributed Bragg reflector on InP substrate operating near 1.55 μm
36. Reciprocal Space Mapping of Epitaxial Materials Using Position-Sensitive X-ray Detection
37. Fermi Level Effects on Dislocation Formation in InAs1−xSbx Grown by MOCVD
38. Application of in situ reflectance monitoring to molecular beam epitaxy of vertical-cavity structures.
39. Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces.
40. Improvement of the inverted GaAs/AlGaAs heterointerface.
41. Design and fabrication of high transconductance modulation-doped (Al,Ga)As/GaAs FETs.
42. Low-noise GaAs field-effect transistors prepared by molecular beam epitaxy.
43. Automatic shutter controller for molecular beam epitaxy.
44. Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures.
45. Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures.
46. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
47. Dislocation imaging of an InAlGaAs opto-electronic modulator using IBICC
48. Low field mobility of 2‐delectron gas in modulation doped AlxGa1−xAs/GaAs layers
49. Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy
50. Clustering in molecular‐beam epitaxial AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.