Search

Typically, optical microscopy uses the wavelike properties of light to image a scene. However, photon arrival times provide more information about emitter properties than the classical intensity alone. Here, we show that the Hanbury Brown and Twiss experiment (second-order correlation function) measures the intensity asymmetry of two single photon emitters, and that by combining the total number of detected photons with the zero-lag value of the correlation function, the positions and relative brightness of two emitters in two dimensions can be resolved from only three measurement positions -- trilateration, a result that is impossible to achieve on the basis of intensity measurements alone., Comment: 5 pages, 2 figures Update: Fixed equation typo. Fixed reference formatting

We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and trilayer structures' valence-band maxima, conduction-band minima, and band gap responses to transverse electric fields. We also report the critical fields where semiconductor-to-metal phase transitions occur. Our results show that band gap engineering by applying electric fields can be an effective strategy to modulate the electronic properties of transition-metal dichalcogenides for next-generation device applications., Comment: 18 pages, 7 figures

Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated. Similarly to the M$_{1}$ structure, the Peierls pairing of the M$_{2}$ structure results in bonding-antibonding splitting which stabilizes states in which the majority of the charge density resides on the Peierls chain. This is insufficient to drop all of the bonding states into the lower Hubbard band however. An antiferroelectric distortion on the neighboring vanadium chain is required to reduce the repulsion felt by the Peierls bonding states by increasing the distances between the vanadium and apical oxygen atoms, lowering the potential overlap thus reducing the charge density accumulation and thereby the electronic repulsion. The antibonding states are simultaneously pushed into the upper Hubbard band. The data indicate that sufficiently modified GW calculations are able to describe the interplay of the atomic and electronic structures occurring in Mott metal-insulator transitions., Comment: 10 Pages, 7 Figures

Novel physical phenomena emerge in ultra-small sized nanomaterials. We study the limiting small-size-dependent properties of MoS$_{2}$ monolayer rhombic nanoflakes using density-functional theory on structures of size up to Mo$_{35}$S$_{70}$ (1.74~nm). We investigate the structural and electronic properties as functions of the lateral size of the nanoflakes, finding zigzag is the most stable edge configuration, and that increasing size is accompanied by greater stability. We also investigate passivation of the structures to explore realistic settings, finding increased HOMO-LUMO gaps and energetic stability. Understanding the size-dependent properties will inform efforts to engineer electronic structures at the nano-scale.

Finding a fluorescent target in a biological environment is a common and pressing microscopy problem. This task is formally analogous to the canonical search problem. In ideal (noise-free, truthful) search problems, the well-known binary search is optimal. The case of half-lies, where one of two responses to a search query may be deceptive, introduces a richer, R\'enyi-Ulam problem and is particularly relevant to practical microscopy. We analyse microscopy in the contexts of R\'enyi-Ulam games and half-lies, developing a new family of heuristics. We show the cost of insisting on verification by positive result in search algorithms; for the zero-half-lie case bisectioning with verification incurs a 50% penalty in the average number of queries required. The optimal partitioning of search spaces directly following verification in the presence of random half-lies is determined. Trisectioning with verification is shown to be the most efficient heuristic of the family in a majority of cases.

We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices., Comment: 11 Pages, 8 Figures

The enabling of scientific experiments that are embarrassingly parallel, long running and data-intensive into a cloud-based execution environment is a desirable, though complex undertaking for many researchers. The management of such virtual environments is cumbersome and not necessarily within the core skill set for scientists and engineers. We present here Chiminey, a software platform that enables researchers to (i) run applications on both traditional high-performance computing and cloud-based computing infrastructures, (ii) handle failure during execution, (iii) curate and visualise execution outputs, (iv) share such data with collaborators or the public, and (v) search for publicly available data., Comment: Preprint, ICSE 2015

A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior., Comment: 7 pages, 4 Figures

It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by the splitting of states at the Fermi level into upper and lower Hubbard bands, and exhibits a giant transfer of spectral weight upon electron doping. The method is also employed to clearly illustrate that the M$_{1}$ and M$_{2}$ forms of vanadium dioxide are fundamentally different types of insulator. Standard GW calculations are sufficient to open a gap in M$_{1}$ VO$_{2}$, which arise from the Peierls pairings filling the valence band, creating homopolar bonds. The valence band wavefunctions are stabilized with respect to the conduction band, reducing polarizability and pushing the conduction band eigenvalues to higher energy. The M$_{2}$ structure however opens a gap from strong on-site interactions; it is a Mott insulator., Comment: 14 pages, 9 figures

Monolayer \delta-doped structures in silicon have attracted renewed interest with their recent incorporation into atomic-scale device fabrication strategies as source and drain electrodes and in-plane gates. Modeling the physics of \delta-doping at this scale proves challenging, however, due to the large computational overhead associated with ab initio and atomistic methods. Here, we develop an analytical theory based on an effective mass approximation. We specifically consider the Si:P materials system, and the limit of high donor density, which has been the subject of recent experiments. In this case, metallic behavior including screening tends to smooth out the local disorder potential associated with random dopant placement. While smooth potentials may be difficult to incorporate into microscopic, single-electron analyses, the problem is easily treated in the effective mass theory by means of a jellium approximation for the ionic charge. We then go beyond the analytic model, incorporating exchange and correlation effects within a simple numerical model. We argue that such an approach is appropriate for describing realistic, high-density, highly disordered devices, providing results comparable to density functional theory, but with greater intuitive appeal, and lower computational effort. We investigate valley coupling in these structures, finding that valley splitting in the low-lying \Gamma band grows much more quickly than the \Gamma-\Delta band splitting at high densities. We also find that many-body exchange and correlation corrections affect the valley splitting more strongly than they affect the band splitting.

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunneling microscope lithography. We develop a plane-wave density functional theory description of these systems which is size-limited due to computational tractability. We then develop a less resource-intensive alternative via localized basis functions, retaining the physics of the plane-wave description, and extend this model beyond the capability of plane-wave methods to determine the ab initio valley splitting of well-isolated \delta-layers. In obtaining agreement between plane-wave and delocalized methods, we show that the valley splitting has been overestimated in previous ab initio calculations by more than 50%.